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Asai H.,High Reliability Engineering and Components Corporation HIREC | Sugimoto K.,High Reliability Engineering and Components Corporation HIREC | Nashiyama I.,High Reliability Engineering and Components Corporation HIREC | Iide Y.,High Reliability Engineering and Components Corporation HIREC | And 3 more authors.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2011

Tolerance against single-event burnout (SEB) caused by terrestrial neutrons is one of the urgent issues in practical application of SiC power devices. This paper presents evaluation results of neutron-induced SEB in SiC power diodes and differences between SiC and Si devices from the SEB stand point of view. © 2011 IEEE. Source


Asai H.,High Reliability Engineering and Components Corporation HIREC | Nashiyama I.,High Reliability Engineering and Components Corporation HIREC | Sugimoto K.,High Reliability Engineering and Components Corporation HIREC | Shiba K.,High Reliability Engineering and Components Corporation HIREC | And 5 more authors.
IEEE Transactions on Nuclear Science | Year: 2014

SEB tolerance of SiC power MOSFETs against terrestrial neutrons is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of a Si MOSFET. The energetic secondary carbon atoms generated by the nuclear reactions and the collisions between the terrestrial neutrons and the lattice atoms of SiC devices may play important role in the SEB triggering mechanism in SiC power devices. © 1963-2012 IEEE. Source

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