Hi Technology Optoelectronics Co.

Beijing, China

Hi Technology Optoelectronics Co.

Beijing, China
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Lian F.-Q.,CAS Academy of Opto Electronics | Lian F.-Q.,University of Chinese Academy of Sciences | Fan Z.-W.,CAS Academy of Opto Electronics | Fan Z.-W.,Beijing GK Laser Technology Co. | And 6 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2014

The picosecond pulse from 1064 nm Yb-doped all-fiber mode-locked laser is amplified by Nd:YAG regenerative amplifier. Research is focused on the influence of Yb-doped all-fiber mode-locked laser on the efficiency of energy extraction of Nd:YAG regeneration amplifier. In order to increase the efficiency of energy extraction, spectral oscillatory fringe is decreased by means of restricting the self-phase modulation of Yb-doped all-fiber mode-locked laser. The Nd:YAG regenerative amplifier produces stable pulse energy of 1.3 mJ at a repetition rate of 1 kHz, which is seeded by a Yb-doped all-fiber mode-locked laser, with a low energy of 3.2 nJ, center wavelength of 1064.1 nm, 3 dB bandwidth of 0.35 nm 11 ps duration. © 2014 Chinese Physical Society.


Xu X.,China University of Mining and Technology | Liu Y.,CAS Institute of Semiconductors | Liu D.,CAS Institute of Semiconductors | Liu D.,Hi Technology Optoelectronics Co. | And 6 more authors.
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2014

Making use of the characteristic of adjustable wavelength of semiconductor materials, AlGaInAs/GaAs/AlGaAs compressive strain quantum well structure was designed and the diode arrays with different wavelength of 760, 800, 860, 930 and 976 nm were fabricated. And also four kinds of edge-band filters and one set of collimating system were designed. Then the five different beams were multiplexed and the laser power of 112 W with the total efficiency of 88.54% is obtained. And the focused spot and the focus optical power density are measured to be 136 μm×1330 μm and 6.43×104 W/cm2, respectively.


Ma X.-Z.,Changchun University of Science and Technology | Huo J.,Hi Technology Optoelectronics Co. | Qu Y.,Changchun University of Science and Technology | Du S.-L.,Changchun University of Science and Technology | Wang Y.,Changchun University of Science and Technology
Faguang Xuebao/Chinese Journal of Luminescence | Year: 2011

Thermal-resistor of different chips based on C-mount package have been measured with the method of wavelength shift in this paper. Through the thermal-resistance measurement, we can get the best size of chip and the thickness of In solder to make the smallest thermal-resistance. The results show that when the thickness of In solder is 10 μm, the output power is 2 W, the bar width is 200 μm, the cavity length is 2 000 μm and the minimum thermal-resistor of the chip is 2.01 °C/W. The thermal-resistors with carvity length of 2 000 μs have been measured when the In solder thickness is 5 μm and 10 μm. The results show that the thermal-resistor dropes from 2.01 °C/W to 1.85 °C/W for the 5 μm In solider.


Ma X.-Z.,Changchun University of Science and Technology | Zhang S.-Y.,Changchun University of Science and Technology | Zhao B.,Changchun University of Science and Technology | Li H.,Changchun University of Science and Technology | And 3 more authors.
Guangzi Xuebao/Acta Photonica Sinica | Year: 2010

In this paper, the internal thermal field and heat flow vector distributions of high power vertical-cavity surface-emitting semiconductor lasers (VCSELs), which is based on AlN film and SiO2 film passivation layers, were analyzed using ANSYS finite-element software. The simulation results proved that the AlN film passivation layer has better features than the SiO2 film passivation layers, and can make the device work in a more stable status, which also improves the device characteristics. Through the simulation, it was found that the Rthjc of VCSEL in AlN film was 3.12 K/W and the Rthjc of VCSEL in SiO2 film was 4.77 K/W. Comparison with the experimental values that the AlN film of 3.59 K/W and the SiO2 film of 4.82 K/W shows that simulation results are in good agreement with the experimental results. The proposed research works prove that the AlN film passivation layer has better thermal features than SiO2 film passivation layer.

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