HGST Inc | Date: 2015-08-31
A memory-array is disclosed in which an array of threshold switching devices is constructed having an area per transistor of 2F^(2). This array of threshold switching devices is suitable for a variety of memory or other applications including PRAM, MRAM, RRAM, FRAM, OPT-RAM and 3-D memory.
Agency: GTR | Branch: EPSRC | Program: | Phase: Training Grant | Award Amount: 3.94M | Year: 2014
The achievements of modern research and their rapid progress from theory to application are increasingly underpinned by computation. Computational approaches are often hailed as a new third pillar of science - in addition to empirical and theoretical work. While its breadth makes computation almost as ubiquitous as mathematics as a key tool in science and engineering, it is a much younger discipline and stands to benefit enormously from building increased capacity and increased efforts towards integration, standardization, and professionalism. The development of new ideas and techniques in computing is extremely rapid, the progress enabled by these breakthroughs is enormous, and their impact on society is substantial: modern technologies ranging from the Airbus 380, MRI scans and smartphone CPUs could not have been developed without computer simulation; progress on major scientific questions from climate change to astronomy are driven by the results from computational models; major investment decisions are underwritten by computational modelling. Furthermore, simulation modelling is emerging as a key tool within domains experiencing a data revolution such as biomedicine and finance. This progress has been enabled through the rapid increase of computational power, and was based in the past on an increased rate at which computing instructions in the processor can be carried out. However, this clock rate cannot be increased much further and in recent computational architectures (such as GPU, Intel Phi) additional computational power is now provided through having (of the order of) hundreds of computational cores in the same unit. This opens up potential for new order of magnitude performance improvements but requires additional specialist training in parallel programming and computational methods to be able to tap into and exploit this opportunity. Computational advances are enabled by new hardware, and innovations in algorithms, numerical methods and simulation techniques, and application of best practice in scientific computational modelling. The most effective progress and highest impact can be obtained by combining, linking and simultaneously exploiting step changes in hardware, software, methods and skills. However, good computational science training is scarce, especially at post-graduate level. The Centre for Doctoral Training in Next Generation Computational Modelling will develop 55+ graduate students to address this skills gap. Trained as future leaders in Computational Modelling, they will form the core of a community of computational modellers crossing disciplinary boundaries, constantly working to transfer the latest computational advances to related fields. By tackling cutting-edge research from fields such as Computational Engineering, Advanced Materials, Autonomous Systems and Health, whilst communicating their advances and working together with a world-leading group of academic and industrial computational modellers, the students will be perfectly equipped to drive advanced computing over the coming decades.
HGST Inc | Date: 2016-07-11
A method populates a parameter set for dynamically adjusting an operating condition in a memory block of a non-volatile memory circuit. A desired condition limit is identified, and a first parameter is computed as a function of a first memory operation to be performed on the memory block. The first parameter is included in a parameter set, and the memory block is cycled until the operating condition reaches the desired condition limit. After cycling, a second parameter is determined as a function of a second memory operation to be performed on the memory block, and the second parameter is included in the parameter set. The steps of cycling, and determining and the including the second parameter may be repeated until a desired number of cycles/parameters are reached. A retention bake may also be performed on the memory circuit, and a bit error rate resulting from a read operation verified.
HGST Inc | Date: 2015-08-25
The present invention is a means and a method for manufacturing large three dimensional memory arrays. The present invention is a means and a method for addressing the WL and BL resistance by creating arrays having not only large plane conductors for each of the memory layers (WLs) but also for the opposite polarity common layer (BL). The present invention is also a means and a method to form via interconnections between the substrate logic and the respective layers of a multidimensional array. The present invention is also a way to operate an array in which the select device is unipolar but the array is above to be operated in a bipolar way. This facilitates a bipolar operation for memory cell technologies such as Resistive RAM (e.g., RRAM, ReRAM and Memresistors).
HGST Inc | Date: 2016-05-16
A flash storage device provides direct memory access based on a first communication protocol. A host selects the first communication protocol and provides a request to the flash storage device for a direct memory access. Additionally, the host provides data blocks to the flash storage device for the direct memory access. In the first communication protocol, the host need not provide an address to the flash storage device for the direct memory access. The flash storage device stores the data blocks at sequential addresses starting at a predetermined address in the flash storage device. Another host may then select a second communication protocol and transfer the data blocks in the flash storage by using the second communication protocol.
HGST Inc | Date: 2016-04-18
Decoding logic is provided that is operational upon a data buffer to represent a plurality of variable nodes and a plurality of check nodes. For a respective one of the variable nodes, a vector component is selected from a confidence vector associated with the variable node. Using a respective one of the check nodes, a check node return value is calculated based on one or more other vector components from one or more other vectors and one or more vector indices corresponding to the one or more other vector components. The confidence vector is then updated based on the check node return value and an index for the check node return value, and a current state of a memory cell associated with the respective one of the variable nodes is determined based on a location of a primary one of multiple vector components within the updated confidence vector.
HGST Inc | Date: 2015-07-09
A method and system for generating a reference voltage are disclosed. The reference voltage is generated by generating a voltage VRIGHT using a first transistor and generating a voltage VBIAS using a second transistor. The gates of the two transistors are connected to a common node VREF, but the loads of the transistors have different resistances. At least one differential pair is used to detect a difference between voltages VRIGHT and VBIAS. VREF is forced to a value at which the source-drain currents in each of the transistors is equal. The transistors sued are NMOS transistors.
HGST Inc | Date: 2015-04-16
A system and method are provided for self-testing one or more digital data storage drives. In particular, a drive tester system connects to the one or more digital data storage drives via a standard two-wire interface, such as a system management bus interface or an I^(2)C interface. The drive tester system performs a self-test on the on more digital data storage drives via the standard two-wire interface. The self-test of the digital data storage drive includes a burn-in and endurance test.
HGST Inc | Date: 2015-04-16
A system and method are provided for boundary scan testing one or more digital data storage drives. In particular, a drive tester system connects to the one or more digital data storage drives via a standard two-wire interface, such as a system management bus (SMBus) interface. The drive tester system performs a boundary scan test on the on more digital data storage drives via the standard two-wire interface. The boundary scan test may include a vector test.
HGST Inc | Date: 2015-07-19
A device and method for incrementally updating the error detecting and correcting bits for an error corrected block of data in a cross point memory array is disclosed. When an error corrected block of data is modified, only the modified data bits and the incrementally updated error detecting and correcting bits are changed in the cross point memory device for improved performant and reduced impact to device endurance.