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News Article | February 16, 2017
Site: www.businesswire.com

MORRISVILLE, Carolina do Norte--(BUSINESS WIRE)--HexaTech Inc. anunciou hoje a assinatura de dois acordos estratégicos com a OSRAM Opto Semiconductors GmbH, de Regensburg, Alemanha. Os acordos incluem um compromisso de fornecimento de longo prazo para substratos de nitreto de alumínio (AIN) da HexaTech, suporte direto do programa de desenvolvimento de substrato de 2 polegadas de diâmetro da HexaTech, bem como licenciamento de algumas propriedades intelectuais (PI) da HexaTech. “Vemos essa parceria colaborativa com a OSRAM como verdadeiramente benéfica para as duas empresas”, declarou o diretor executivo da HexaTech, John Goehrke. “Ao licenciar a nossa tecnologia, a OSRAM é capaz de acelerar seu desenvolvimento de dispositivos de UV-C-LED baseado no material da HexaTech e somos capazes de focar em nossa competência principal, fornecendo substratos de nitreto de alumínio de classe mundial.” Ele acrescentou ainda, “Estamos entusiasmados pelo fato da OSRAM, um líder destacado da indústria reconhecer um enorme valor que a nossa propriedade intelectual e substratos fornecem às aplicações UV-C, que mais uma vez demonstram nossa crença de que o melhor material substrato leva ao melhor desempenho do dispositivo.” Fundada em 2001, com uma equipe de experts da indústria em semicondutores de nitreto III, a equipe solucionou com sucesso a ciência de material complexo e os desafios de engenharia para comercializar substratos de nitreto de alumínio de alta qualidade para produção em escala. Para informações adicionais da empresa e do produto, visite-nos em www.hexatechinc.com. OSRAM, com sede em Munique, é líder global na fabricação de produtos de iluminação com uma história de cerca de 100 anos. O portfólio de produtos inclui aplicações de alta tecnologia baseadas na tecnologia de semicondutores como, por exemplo, iluminação a laser ou infravermelho. Os produtos são usados em aplicações altamente diversas desde realidade virtual, direção autônoma ou telefonia móvel até soluções de iluminação inteligentes e conectadas em edifícios e cidades. Na iluminação automotiva, a empresa é líder em tecnologia e mercado global. Baseada em operações contínuas (excluindo-se Ledvance), a OSRAM possuía cerca de 24.600 funcionários em todo o mundo ao final do ano fiscal de 2016 (30 de setembro) e gerou receitas de quase € 3,8 bilhões naquele ano fiscal. A empresa é listada nas Bolsas de Valores de Frankfurt e Munique (ISIN: DE000LED4000; WKN: LED400; símbolo de comercialização: OSR). Informações adicionais podem ser encontradas em www.osram.com. O texto no idioma original deste anúncio é a versão oficial autorizada. As traduções são fornecidas apenas como uma facilidade e devem se referir ao texto no idioma original, que é a única versão do texto que tem efeito legal.


News Article | February 16, 2017
Site: www.businesswire.com

MORRISVILLE, Carolina del Norte--(BUSINESS WIRE)--HexaTech Inc. anunció hoy la firma de dos acuerdos estratégicos con OSRAM Opto Semiconductors GmbH, de Regensburg, Alemania. Este acuerdo incluye un compromiso de abastecimiento a largo plazo de los sustratos de nitruro de aluminio (AlN) para HexaTech, apoyo directo del programa de desarrollo de 2" de sustrato de diámetro y, además, la licencia de ciertos derechos de propiedad intelectual (intellectual property, IP) de la empresa. HexaTech, prov


News Article | February 16, 2017
Site: www.businesswire.com

MORRISVILLE, Carolina del Nord--(BUSINESS WIRE)--HexaTech Inc. ha annunciato quest'oggi di aver stipulato due contratti strategici con OSRAM Opto Semiconductors GmbH, di Regensburg, Germania. I suddetti contratti comprendono la fornitura a lungo termine dei substrati in nitruro d'alluminio (aluminum nitride, AlN) di HexaTech, assistenza diretta per il programma di sviluppo di substrati con un diametro di 2 pollici (5,08 cm) di HexaTech, nonché la licenza per talune proprietà intellettuali (PI) di HexaTech.


News Article | February 15, 2017
Site: www.businesswire.com

MORRISVILLE, N.C.--(BUSINESS WIRE)--HexaTech Inc. announced today the signing of two strategic agreements with OSRAM Opto Semiconductors GmbH, of Regensburg, Germany. The agreements include a long term supply commitment for HexaTech’s aluminum nitride (AlN) substrates, direct support of HexaTech’s 2” diameter substrate development program, as well as licensing of certain HexaTech intellectual property (IP). HexaTech, the world’s leading commercial supplier of single crystal AlN substrates, has developed a unique and valuable knowledge base for optoelectronic, high power and RF (radio frequency) applications based on its proprietary material, helping to activate and promote a significant market pull for its underlying substrate technology. “We view this collaborative partnership with OSRAM as truly a win-win for both companies,” stated HexaTech CEO John Goehrke. “By licensing our technology, OSRAM is able to accelerate their UV-C LED device development based on HexaTech’s material, and we are able to focus on our core competency, supplying world-class AlN substrates.” He further added, “We’re thrilled that OSRAM, a clear industry leader, recognizes the tremendous value our IP and substrates provide for UV-C applications, which once again demonstrates our belief that the best substrate material yields the best device performance.” Hans-Juergen Lugauer, Head of UV-LED Research and Development at OSRAM Opto Semiconductors remarked, “Through OSRAM’s strategy of actively expanding our non-visible optoelectronic product portfolio into the UV-C wavelength range, we are poised to capitalize on this rapidly growing market segment. Establishing a long-term strategic relationship with HexaTech, a recognized industry leader in the field of AlN, will allow us to develop highly efficient and reliable deep UV devices, positioning OSRAM as the dominant high performance optoelectronic technology provider from the deep ultraviolet through infrared wavelengths.” For more information on HexaTech’s AlN substrate technology, please visit http://www.hexatechinc.com/aln-wafer-sales.html, or contact HexaTech at sales@hexatechinc.com. HexaTech is an industry-leading manufacturer of single crystal Aluminum Nitride (AlN) substrates. This substrate material is enabling long life UV-C light emitting diodes (LEDs) for disinfection applications, deep UV lasers for biological threat detection, and high voltage power semiconductors for smart grid and efficient power conversion. HexaTech’s current product lines include single crystal and polycrystalline AlN substrates, with advanced device technologies based on AlN substrates also in development. Founded in 2001 with a team of industry experts in III-nitride semiconductors, the team has successfully solved complex material science and engineering challenges to commercialize high quality bulk AlN for volume production. For additional company and product information, please visit us at www.hexatechinc.com. OSRAM, based in Munich, is a globally leading lighting manufacturer with a history dating back about 100 years. The product portfolio includes high-tech applications based on semiconductor technology such as infrared or laser lighting. The products are used in highly diverse applications ranging from virtual reality, autonomous driving or mobile phones to smart and connected lighting solutions in buildings and cities. In automotive lighting, the company is the global market and technology leader. Based on continuing operations (excluding Ledvance), OSRAM had around 24,600 employees worldwide at the end of fiscal 2016 (September 30) and generated revenue of almost €3.8 billion in that fiscal year. The company is listed on the stock exchanges in Frankfurt and Munich (ISIN: DE000LED4000; WKN: LED400; trading symbol: OSR). Additional information can be found at www.osram.com.


News Article | February 16, 2017
Site: www.businesswire.com

HexaTech, le principal fournisseur commercial au monde de substrats monocristal au AlN, a mis au point un corpus de connaissances unique et précieux pour l’optoélectronique, les applications haute puissance et les applications RF (radiofréquence) basées sur son matériau exclusif, contribuant à activer et à promouvoir une traction importante du marché pour sa technologie de substrat sous-jacente. « Nous considérons ce partenariat collaboratif avec OSRAM véritablement comme une proposition gagnant-gagnant pour les deux entreprises », a déclaré le PDG de HexaTech John Goehrke. « En octroyant à OSRAM notre technologie sous licence, la société est en mesure d’accélérer le développement de son périphérique LED UV-C basé sur le matériau de HexaTech, et nous pouvons ainsi nous concentrer sur notre cœur de métier, c’est-à-dire la fourniture en substrats AlN de classe mondiale. » Il a ajouté par ailleurs : « Nous sommes ravis qu’OSRAM, un leader incontesté du secteur, reconnaisse la valeur incroyable que notre PI et nos substrats apportent aux applications UV-C, ce qui démontre une fois de plus notre conviction que le meilleur matériau de substrat produit les meilleures performances de dispositif. » Hans-Juergen Lugauer, responsable de la recherche et du développement en UV-LED chez OSRAM Opto Semiconductors a fait remarquer : « Grâce à la stratégie d’OSRAM visant à étendre activement son portefeuille de produits d’optoélectronique non visible dans la longueur d’onde UV-C, nous sommes bien positionnés pour capitaliser sur ce segment de marché en plein essor. Établir une relation stratégique à long terme avec HexaTech, un leader reconnu dans le domaine de l’AlN, nous permettra de développer des appareils UV lointain hautement efficaces et fiables et établira OSRAM comme le fournisseur dominant de technologie optoélectronique haute performance, des longueurs d’onde allant de l’ultraviolet lointain aux infrarouges. » Fondé en 2001 avec une équipe d’experts dans le secteur des semi-conducteurs nitrure-III, l’équipe a réussi à résoudre des problèmes complexes en science des matériaux et ingénierie afin de commercialiser un AlN haute qualité en vrac destiné à la production de masse. Pour de plus amples renseignements sur la société et des informations sur ses produits, veuillez consulter notre site Internet à l’adresse www.hexatechinc.com. OSRAM, basé à Munich, est un fabricant de premier plan mondial de solutions d’éclairage dont l’histoire remonte à près de 100 ans. Sa gamme de produits inclut des applications de haute technologie basées sur la technologie des semi-conducteurs (éclairage infrarouge ou laser, par ex.). Ses produits sont utilisés dans des applications très diverses allant de la réalité virtuelle, la conduite autonome ou des téléphones portables aux solutions d’éclairage intelligentes et connectées dans les bâtiments et les villes. Dans le domaine de l’éclairage automobile, la société est numéro un mondial en termes de parts de marché et de technologie. Sur la base des activités poursuivies (hors Ledvance), OSRAM comptait environ 24 600 salariés à l’échelle mondiale à la fin de l’exercice 2016 (30 septembre) et a généré un chiffre d’affaires de près de 3,8 milliards € au cours de cet exercice. La société est cotée à la bourse de Francfort et à la bourse de Munich (ISIN : DE000LED4000 ; WKN : LED400 ; mnémonique : OSR). Pour plus d’informations, consultez www.osram.com.


The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10^(5 )cm^(2 )and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10^(5 )A/cm^(2 )at 10 V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm^(2).


The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10^(5 )cm^(2 )and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped Al_(x)Ga_(1x)N layer overlying the aluminum nitride single crystalline substrate.


The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10^(5 )cm^(2 )and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10^(5 )A/cm^(2 )at 10V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm^(2).


Methods of preparing polycrystalline aluminum nitride materials that have high density, high purity, and favorable surface morphology are disclosed. The methods generally comprises pressing aluminum nitride powders to form a slug, sintering the slug to form a sintered, polycrystalline aluminum nitride boule, and optionally shaping the boule and/or polishing at least a portion of the boule to provide a finished substrate. The sintered, polycrystalline aluminum nitride materials beneficially are prepared without the use of any sintering aid or binder, and the formed materials exhibit excellent density, AlN purity, and surface morphology.


News Article | February 16, 2017
Site: www.businesswire.com

Het in Regensburg gevestigde HexaTech, wereldwijd toonaangevend in aluminiumnitridesubstraat met enkele kristal, heeft unieke en waardevolle kennis over krachtige optisch-elektronische RF-toepassingen met zijn gepatenteerde materialen. Daarmee levert het bedrijf een belangrijke bijdrage aan het aantrekken van de markt voor onderliggende substraattechnologie. Deze bekendmaking is officieel geldend in de originele brontaal. Vertalingen zijn slechts als leeshulp bedoeld en moeten worden vergeleken met de tekst in de brontaal, welke als enige rechtsgeldig is.

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