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Yuan P.,Henan Shi Jia Photons Technology Co. | Wu Y.-D.,CAS Institute of Semiconductors | Wang Y.,CAS Institute of Semiconductors | An J.-M.,CAS Institute of Semiconductors | Hu X.-W.,CAS Institute of Semiconductors
Optoelectronics Letters | Year: 2016

According to the plasma dispersion effect of silicon (Si), a silicon-on-insulator (SOI) based variable optical attenuator (VOA) with p-i-n lateral diode structure is demonstrated in this paper. A wire rib waveguide with sub-micrometer cross section is adopted. The device is only about 2 mm long. The power consumption of the VOA is 76.3 mW (0.67 V, 113.9 mA), and due to the carrier absorption, the polarization dependent loss (PDL) is 0.1 dB at 20 dB attenuation. The raise time of the VOA is 34.5 ns, the fall time is 37 ns, and the response time is 71.5 ns. © 2016, Tianjin University of Technology and Springer-Verlag Berlin Heidelberg. Source


Liu L.-J.,CAS Institute of Semiconductors | Wu Y.-D.,CAS Institute of Semiconductors | Wang Y.,CAS Institute of Semiconductors | An J.-M.,CAS Institute of Semiconductors | And 2 more authors.
Faguang Xuebao/Chinese Journal of Luminescence | Year: 2016

The vertical-cavity surface-emitting laser(VCSEL) is becoming a key device in the gigabit, local-area networks(LANs) and optical interconnets. Its volumn is increasing ever year in the world. However, there is no company to produce this promising device in China. In this paper, we review its material system properties and fabrication technology of 1 310 nm long-wavelength band and analyse the advantage and disadvantage from production. Lastly, we give a conclusion which method is better choice in the industrlization. © 2016, Science Press. All right reserved. Source


Wang L.,CAS Institute of Semiconductors | An J.,CAS Institute of Semiconductors | Wu Y.,CAS Institute of Semiconductors | Wang Y.,CAS Institute of Semiconductors | And 11 more authors.
Optics and Laser Technology | Year: 2014

In this paper, a compact and low wavelength-dependence loss (WDL) 1×64 optical power splitter is fabricated using silica-based PLC technology on quartz substrate. The cascaded Y-branch structures are optimized in detail, and a compact 1×64 optical power splitter layout is obtained. The measured results show that the insertion loss (IL), the uniformity and WDL of the best results of all splitters are less than 19.2 dB, 1.0 dB and 0.5 dB, respectively, in the wavelength range from 1.26 μm to 1.65 μm, and the total product ratio of Standard grade in a whole 6 in. wafer is more than 80%. The results imply that our technology completely satisfies the need of mass manufacture. © 2014 Elsevier Ltd. Source


Yuan P.,Henan Shi Jia Photons Technology Co. | Wu Y.,CAS Institute of Semiconductors | Wang Y.,CAS Institute of Semiconductors | An J.,CAS Institute of Semiconductors | Hu X.,CAS Institute of Semiconductors
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2016

A 16-channel SOI-based arrayed waveguide grating (AWG) was designed and fabricated. The central wavelength of the AWG is 1550 nm and its channel spacing 200 GHz. A rib waveguide was used and the optimal structure was chosen to assure the single-mode behaviour. Beam propagation method (BPM) simulations were performed to get the impact of the parameters (waveguide distance, the bending radius, and the taper length) on the performance of the AWG, and the transmission spectrum of the AWG was also obtained by BPM. The simulation results show that the minimum loss of the 16 channels is 4.64 dB, and the crosstalk of the AWG is less than -30 dB. Adopting the optimized parameters, the AWG was fabricated by photo etching lithographic process. The measured result is that the loss of the AWG is 4.52~8.1 dB, and the crosstalk is 17~20 dB, exhibiting excellent performance of wavelength demultiplexing. © 2016, Editorial Office of Semiconductor Optoelectronics. All right reserved. Source


Dai H.,CAS Institute of Semiconductors | An J.,CAS Institute of Semiconductors | Wang Y.,CAS Institute of Semiconductors | Zhang J.,CAS Institute of Semiconductors | And 6 more authors.
Journal of Semiconductors | Year: 2014

A monolithic integrated variable attenuator multiplexer/demultiplexer is demonstrated. It is composed of a 16-channel 200 GHz silica-based arrayed waveguide grating and an array of Mach - Zehnder interferometer thermo-optic variable optical attenuators. The integrated device is fabricated on a quartz substrate, which eliminates the process of depositing the undercladding layer and reduces the power consumption compared with a device fabricated on a silicon substrate. The insertion loss and crosstalk of the integrated device are -5 dB and less than -22 dB, respectively. The power consumption is only 110 mW at the attenuation of 20 dB per channel. © 2014 Chinese Institute of Electronics. Source

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