Hebei Plasma Diamond Technology Co.

Shijiazhuang, China

Hebei Plasma Diamond Technology Co.

Shijiazhuang, China
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Li Y.-F.,University of Science and Technology Beijing | Li Y.-F.,Hebei Institute of Laser | Li Y.-F.,Hebei Plasma Diamond Technology Co. | Tang W.-Z.,University of Science and Technology Beijing | And 9 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2016

The structural features of a home-made circumferential antenna ellipsoidal cavity type MPCVD reactor was recommended. The discharge characteristics under high power levels was demonstrated and discussed. High quality diamond film with diameter of 50 mm and thickness of about 1 mm was synthesized under 10.5 kW input microwave power. The growth rate of the diamond film is about 6 μm/h with the leak rate of about 2.5×10-6 Pa·m3/s for the reactor and the deviation of the thickness is less than ±2.1%. Test results show that the polished diamond film possessed excellent characteristics such as FWHM of Raman peak of only 1.8 cm-1, a cutoff wavelength of 225 nm, UV transmittance at 270 nm is more than 50%, a nitrogen content about 1.5 ppm and transmission near 71% in the 6.5-25μm range. © 2016, Chinese Ceramic Society. All right reserved.

Li Y.F.,Hebei Academy of science | Li Y.F.,Hebei Plasma Diamond Technology Co. | An X.M.,Hebei Academy of science | An X.M.,Hebei Plasma Diamond Technology Co. | And 12 more authors.
Diamond and Related Materials | Year: 2017

A 915 MHz/75 kW cylindrical cavity type microwave plasma chemical vapor deposition reactor was set up by scaling a 2.45 GHz TM021 mode microwave resonant cavity. The new reactor retains a cylindrical geometry, which makes it possible to set up an adjustment mechanism for plasma distribution in the reactor during its operation. In addition, a ladder-shaped circumferential antenna was used as the microwave coupling mechanism, so that sealing reliability of the deposition chamber and high power capability of the reactor are ensured. Experimentally, 3–5 inch diameter crack-free diamond films were prepared. The pressure was set at between 15 and 20 kPa and input power used was between 40 and 60 kW, respectively. Growth rate of diamond films ranged between 1.6 and 5.6 μm/h for different size and quality materials, with deviations in thickness within a range of about ± 4% and ± 8% over 3 and 5 inch areas. Morphology, crystalline quality as well as purity of the diamond films were characterized by using optical microscopy, Raman and photoluminescence spectra, and the results proved that the quality and the purity of the diamond films were excellent. © 2017

Luo T.,Hebei Institute of Laser | Luo T.,Hebei Plasma Diamond Technology Co. | Cai Y.,Hebei Institute of Laser | Cai Y.,Hebei Plasma Diamond Technology Co. | And 6 more authors.
Jingangshi yu Moliao Moju Gongcheng/Diamond and Abrasives Engineering | Year: 2015

In order to improve the transparence of diamond films and the stability of technical parameters, the black defects of diamond films prepared with DC Arc Plasma Jet CVD method were investigated. The black defects after observation, analysis, measurement and comparison using several kinds of optical microscopes were classified into punctiform, massive, texture and lamellar defects. The punctiform black defects were produced by masking and scattering of light caused by granular metal impurity, carbon mass, cavity and penetrating twins in diamond films. The massive and stripped defects were produced by reflection and scattering of light caused by changes of surface angle and orientation between the crystal columns. The texture defects were produced by the stress in the diamond films. The lamellar defects were produced by absorption of light caused by conductive elements at different horizons of diamond films. The lamellar defects were the main light-blocked defects of diamond films because the existence of lamellar defects severely influenced the improvement and stability of transparence, abrasion ratio, thermal conductivity and three-point bending fracture strength of diamond films. Some ways to solve the black defects had been put forward. ©, 2015, Zhengzhou Institute of Abrasives Grinding. All right reserved.

Wang Z.-N.,Hebei Institute of Laser | Wang Z.-N.,Hebei Plasma Diamond Technology Co. | Li G.-H.,Hebei Institute of Laser | Li G.-H.,Hebei Plasma Diamond Technology Co. | And 5 more authors.
Jingangshi yu Moliao Moju Gongcheng/Diamond and Abrasives Engineering | Year: 2011

Diamond films were deposited on Si substrate by plasma jet. The influence of size and pretreatment method of silicon wafer, as well as diamond film deposition and heat treatment on the characteristics and crack of composite substrate were investigated. The fabrication processes for the diamond film/Si composite substrates was optimized.The results showed that: the thickness of diamond film deposited on Si substrate was more than 20 μm. After polishing, the surface roughness(R a) of diamond film reached 5.2 nm. The thickness of residual diamond film was more than 10 μm, and the flatness was less than 30 μm. The indexes of composite substrates met technical requirements of electronic components.

Hebei Plasma Diamond; Technology Co. | Date: 2012-04-23

Pearls made of ambroid (pressed amber); amulets; diamonds; jewellery; paste jewellery; works of art of precious metal; tie pins; synthetic diamonds; laser cut synthetic gems; wristwatches.

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