Milpitas, CA, United States
Milpitas, CA, United States

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Patent
Headway Technologies Inc. | Date: 2016-11-30

A read head is longitudinally biased unidirectionally by laterally abutting soft magnetic layers or multilayers. The soft magnetic layers are themselves magnetically stabilized by layers of antiferromagnetic material that are exchange coupled to them. The same layers of antiferromagnetic materials can be used to stabilize a unidirectional anisotropy of an overhead shield by means of exchange coupling. By including the antiferromagnetic material layer within the patterned biasing structure itself, an additional layer of antiferromagnetic material that normally covers the entire sensor structure is eliminated. The elimination of an entire layer is also advantageous for reducing the inter-sensor spacing in a TDMR (two dimensional magnetic recording) configuration where two sensor are vertically stacked on top of each other.


A design for a microwave assisted magnetic recording device is disclosed wherein a spin torque oscillator (STO) between a main pole and write shield has a spin polarization (SP) layer less than 30 Angstroms thick and perpendicular magnetic anisotropy (PMA) induced by an interface with one or two metal oxide layers. Back scattered spin polarized current from an oscillation layer is used to stabilize SP layer magnetization. One or both of the metal oxide layers may be replaced by a confining current pathway (CCP) structure. In one embodiment, the SP layer is omitted and spin polarized current is generated by a main pole/metal oxide interface. A direct current or pulsed current bias is applied across the STO. Rf current may also be injected into the STO to reduce critical current density. A write gap of 25 nm or less is achieved while maintaining good STO performance.


Patent
Headway Technologies Inc. | Date: 2016-05-13

Devices and methods for detecting the presence or absence and/or one or more characteristics of analytes are disclosed. Embodiments of the disclosed devices include an actuator having a staging reservoir which can be operably connected with an electrophoresis assembly. In some embodiments, the disclosed methods include operating the subject devices, for example, by actuating the actuator to operably connect, e.g., fluidically connect, components of the devices, and electrophoresing or otherwise propelling a sample through portions of the devices. In some embodiments, the disclosed methods include detecting an analyte and/or analyzing properties of a sample, such as one or more characteristics of an analyte in a sample. The analyte of interest can be a charged molecule or can be modified to be charged using, for example, one or more ionic moieties.


A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a gap layer and a 10-16 kG magnetic layer in the side shields, and between the leading gap and a 16-19 kG magnetic layer in the leading shield to improve Hy_grad and Hy_grad_x while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of 0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of 0.5 micron. First and second sides may form a continuous curve or a double tapered design where first and second sides have different angles with respect to a center plane. The side shield design described herein is especially beneficial for side gaps of 20-60 nm.


Patent
Headway Technologies Inc. | Date: 2016-03-04

Methods of detecting a target analyte in a sample are provided. Aspects of the method include: (a) contacting the sample with (i) a first capture agent that specifically binds the target analyte and (ii) a reporter complex under conditions sufficient to produce a sandwich complex; (b) separating the sandwich complex from the sample; and (c) releasing a detectable tag from the sandwich complex. The reporter complex may include a first specific binding member linked to a second capture agent that specifically binds the target analyte, and a second specific binding member specifically bound to the first specific binding member. In some cases, the second specific binding member is linked to a detectable tag. The releasing step may be achieved using a displacement binding member that is complementary to the first or second specific binding member. Also provided are compositions, systems and kits for practicing the subject methods.


Patent
Headway Technologies Inc. | Date: 2016-08-26

A method of forming a sensor array comprising a series connection of parallel GMR sensor stripes that provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.


Patent
Headway Technologies Inc. | Date: 2016-07-22

We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell is formed of a vertically or horizontally series connected sequence of N sub-cells, each sub-cell being an identical MTJ element. A statistical population of such multiple sub-cell unit cells has a variation of resistance that is less by a factor of N^(1/2 )than that of a population of single sub-cells. As a result, such unit cells have an improved read margin while not requiring an increase in the critical switching current.


Patent
Headway Technologies Inc. | Date: 2016-07-28

A magnetic write head has a plated coil with narrow pitch and is suitable for writing at high frequencies on magnetic media with high coercivity. The narrow pitch is obtained without such disadvantages as overplating that has adversely affected prior art attempts to produce such narrow pitches. The process that produces the magnetic write head is characterized by an RIE plasma etch using O_(2)/N_(2 )to etch plating trenches into a baked layer of photoresist with the ratio of gases being 5/45 sccm so that a dilute O_(2 )concentration does not create unwanted side etching of the plating trenches. In addition, a Cu seed layer is coated with an insulating layer of Al_(2)O_(3 )which redeposits on the trench sidewalls to inhibit redeposition of any Cu from the seed layer and prevent outward growth of the plated Cu that would result in overplating.


Patent
Headway Technologies Inc. | Date: 2016-10-03

The use of supermalloy-like materials such as NiFeMe where Me is one or more of Mo, Cr, and Cu for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability. Moreover, the side shield may comprise a stack in which a Ni, Fe, Co, FeNi, CoFe, or FeCo is sandwiched between two NiFeMe layers to enhance the bias field on an adjacent free layer. Including NiFeMe in a side shield results in an increase in readback amplitude under the same asymmetric sigma. For these sensors, the signal to noise ratio was higher and the bit error rate was lower than with conventional materials in the side shield.


Patent
Headway Technologies Inc. | Date: 2016-03-23

An integrated circuit includes a magnetic OTP memory array formed of multiple magnetic OTP memory cells having an MTJ stack with a fixed magnetic layer, a tunnel barrier insulating layer, a free magnetic layer, and a second electrode. When a voltage is applied across the magnetic OTP memory cell, the resistance of the MTJ stack and the gating transistor form a voltage divider to apply a large voltage across the MTJ stack to breakdown the tunnel barrier to short the fixed layer to the free layer. The integrated circuit has multiple MRAM arrays configured such that each of the multiple MRAM arrays have performance and density criteria that match MOS transistor based memory including SRAM, DRAM, and flash memory. The integrated circuit may include a functional logic unit connected with the magnetic OTP memory arrays and the MRAM arrays for providing digital data storage.

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