Headway Technologies Inc. | Date: 2015-11-05
A PMR (perpendicular magnetic recording) head includes a tapered write pole that is fully surrounded by wrapped-around magnetic shields, including laterally disposed side shields, a trailing shield and a leading shield. A layer of high magnetic saturation material (high B_(s)) is formed on the leading edge of the trailing shield and extends rearward, away from the ABS plane to define a cross-sectional write gap shape that is not conformal with the shape of the tapered write pole. The cross-sectional shape of this shield layer enables it to absorb flux from the write pole so that the flux for writing is enhanced and concentrated at the area of the recording medium being written upon and does not extend to adjacent tracks or to downtrack positions at which such flux is not desired.
Headway Technologies Inc. | Date: 2015-11-02
A magnetic head includes a coil, a main pole and a return path section. The return path section is located on the trailing side relative to the main pole so that a space is defined between the main pole and itself. The coil includes a first winding portion and a second winding portion connected in series. The first winding portion extends to pass through the aforementioned space, and extends once around the entire perimeter of the main pole as viewed from the medium facing surface. The second winding portion does not pass through the aforementioned space, and surrounds only a part of the entire perimeter of the main pole as viewed from the medium facing surface.
Headway Technologies Inc. | Date: 2016-11-07
A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof is inserted between the seed layer and magnetic layer. In some embodiments, a first composite seed layer/NiCr stack is formed below the reference layer, and a second composite seed layer/NiCr stack is formed between the free layer and a dipole layer. The magnetic element has thermal stability to at least 400 C.
Headway Technologies Inc. | Date: 2015-11-18
A magnetic head includes a coil, a main pole, a write shield, and a return path section. The coil includes a coil element located on the trailing side of the main pole. The coil element has a front end face facing toward the medium facing surface. The return path section includes a first portion, a second portion, and an intermediate film interposed between the first portion and the second portion. Part of the first portion is interposed between the medium facing surface and the front end face of the coil element. Part of the second portion is interposed between the first portion and the front end face of the coil element.
Headway Technologies Inc. | Date: 2015-11-20
A PMR writer is disclosed wherein magnetic flux return from a magnetic medium to a main pole is substantially greater through a trailing shield structure than through a leading shield and return path layer (RTP). Magnetic impedance is increased between the RTP and main pole in the leading return loop by modifying the size and shape of the back gap connection (BGC), by decreasing Bs in the RTP or reducing its thickness, or by removing one or more layers in the BGC and replacing with dielectric material or non-magnetic metal to form a dielectric gap between the RTP and main pole. As a result, area density control and bit error rate are improved over a conventional dual write shield (DWS) structure comprising two flux return pathways. Moreover, adjacent track erasure is maintained at a level similar to a DWS design.
Headway Technologies Inc. | Date: 2015-11-23
A seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a seed layer such as Mg where the seed layer has a resputtering rate 2 to 30 that of the amorphous layer. The uppermost seed layer is a template layer that is NiCr or NiFeCr. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400 C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited. The seed layer stack may include a bottommost Ta or TaN buffer layer.
Headway Technologies Inc. | Date: 2017-03-22
A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. A key feature is a passive oxidation step of a first Mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10-5torr. A bottom portion (21) of the first Mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and MTJ. An uppermost Mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.
Headway Technologies Inc. | Date: 2016-07-28
A magnetic write head has a plated coil with narrow pitch and is suitable for writing at high frequencies on magnetic media with high coercivity. The narrow pitch is obtained without such disadvantages as overplating that has adversely affected prior art attempts to produce such narrow pitches. The process that produces the magnetic write head is characterized by an RIE plasma etch using O_(2)/N_(2 )to etch plating trenches into a baked layer of photoresist with the ratio of gases being 5/45 sccm so that a dilute O_(2 )concentration does not create unwanted side etching of the plating trenches. In addition, a Cu seed layer is coated with an insulating layer of Al_(2)O_(3 )which redeposits on the trench sidewalls to inhibit redeposition of any Cu from the seed layer and prevent outward growth of the plated Cu that would result in overplating.
Headway Technologies Inc. | Date: 2016-10-03
The use of supermalloy-like materials such as NiFeMe where Me is one or more of Mo, Cr, and Cu for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability. Moreover, the side shield may comprise a stack in which a Ni, Fe, Co, FeNi, CoFe, or FeCo is sandwiched between two NiFeMe layers to enhance the bias field on an adjacent free layer. Including NiFeMe in a side shield results in an increase in readback amplitude under the same asymmetric sigma. For these sensors, the signal to noise ratio was higher and the bit error rate was lower than with conventional materials in the side shield.
Headway Technologies Inc. | Date: 2016-03-23
An integrated circuit includes a magnetic OTP memory array formed of multiple magnetic OTP memory cells having an MTJ stack with a fixed magnetic layer, a tunnel barrier insulating layer, a free magnetic layer, and a second electrode. When a voltage is applied across the magnetic OTP memory cell, the resistance of the MTJ stack and the gating transistor form a voltage divider to apply a large voltage across the MTJ stack to breakdown the tunnel barrier to short the fixed layer to the free layer. The integrated circuit has multiple MRAM arrays configured such that each of the multiple MRAM arrays have performance and density criteria that match MOS transistor based memory including SRAM, DRAM, and flash memory. The integrated circuit may include a functional logic unit connected with the magnetic OTP memory arrays and the MRAM arrays for providing digital data storage.