Hasselt University is a university with campuses in Hasselt and Diepenbeek, Belgium. It was officially established in 1971, as the Limburgs Universitair Centrum . On June 15, 2005 the university changed its name to Hasselt University.Currently, the universities of Hasselt and Maastricht work together as the Transnational University Limburg . Together with Hogeschool PXL , it established the Limburg Association of Higher Education .The rector of the university currently is Prof. Luc de Schepper, the vice rectors are Prof. Paul Janssen and Prof. Jean-Michel Rigo. Wikipedia.
Hasselt University and Iimec | Date: 2012-06-08
New monomers, polymers, and blends of polymers with an electron acceptor are provided, e.g., for use in a photovoltaic device. The electron acceptor can be a fullerene derivative and the polymer can comprise monomer units according to the formula: wherein L is L-C(O)O-J, L-C(O)NR-J, L-OCO-J, L-NRCO-J, L-SCO-J, L-O-J, L-S-J, L-Se-J, L-NR-J or L-CN; L is a linear or branched alkylene group having from 1 to 10 carbon atoms; J is a hydrogen atom or a linear or branched alkyl group having from 1 to 4 carbon atoms; J is a group having from 1 to 10 carbon atoms, being saturated or unsaturated, linear or branched, optionally comprising a phenyl unit; and R is a hydrogen atom or a linear or branched alkyl group having from 1 to 4 carbon atoms.
Hasselt University and Imec | Date: 2012-11-29
Hasselt University and Imec | Date: 2011-11-25
A method an system is disclosed for characterising DNA and/or RNA duplexes. The biosensing device comprises a heating element using a power and being suitable for providing thermal denaturation of target DNA and/or RNA bioparticles, a sample holder adapted for receiving a biocompatible substrate having a functionalized surface which is coated with probe DNA and/or RNA whereto target DNA and/or RNA duplexes can be attached, the sample holder further being adapted for exposing the biocompatible substrate at one side to the heating element, a first temperature sensing element for sensing a temperature at the side where the biocompatible substrate can be exposed to the heating element and a second temperature sensing element for sensing a temperature at the side opposite thereto with respect to the biocompatible substrate. The device also comprises a processing means programmed for calculating at least one heat transfer resistivity value based on temperature values obtained with the first temperature sensing element and the second temperature sensing element and the power for the heating element, for deriving a characteristic of the target DNA and/or RNA bioparticles from said heat transfer resistivity value.
Imec, Catholic University of Leuven and Hasselt University | Date: 2014-09-29
A method for chemically cleaning and passivating a chalcogenide layer is provided, wherein the method comprises bringing the chalcogenide layer into contact with an ammonium sulfide containing ambient, such as an ammonium sulfide liquid solution or an ammonium sulfide containing vapor. Further, a method for fabricating photovoltaic cells with a chalcogenide absorber layer is provided, wherein the method comprises: providing a chalcogenide semiconductor layer on a substrate; bringing the chalcogenide semiconductor layer into contact with an ammonium sulfide containing ambient, thereby removing impurities and passivating the chalcogenide semiconductor layer; and afterwards providing a buffer layer on the chalcogenide semiconductor layer.
Imec, King Abdulaziz City for Science, Technology, Catholic University of Leuven and Hasselt University | Date: 2015-09-04
The disclosed technology generally relates to chalcogenide thin films, and more particularly to ternary and quaternary chalcogenide thin films having a wide band-gap, and further relates to photovoltaic cells containing such thin films, e.g., as an absorber layer. In one aspect, a method of forming a ternary or quaternary thin film chalcogenide layer containing Cu and Si comprises depositing a copper layer on a substrate. The method additionally comprises depositing a silicon layer on the copper layer with a [Cu]/[Si] atomic ratio of at least 0.7, and thereafter annealing in an inert atmosphere. The method further includes performing a first selenization or a first sulfurization, thereby forming a ternary thin film chalcogenide layer on the substrate. In another aspect, a composite structure includes a substrate having a service temperature not exceeding 600 C. and a ternary chalcogenide thin film or a quaternary chalcogenide thin film on the substrate, where the ternary or quaternary chalcogenide thin film comprises a selenide and/or a sulfide containing Cu and Si.