Hareon Solar Technology Co.

Chengjiang, China

Hareon Solar Technology Co.

Chengjiang, China
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Dong J.,Hareon Solar Technology | Tao L.,Hareon Solar Technology Co. | Tao L.,Suzhou Runergy PV Technology Co. | Zhu Y.,Hareon Solar Technology | And 5 more authors.
IEEE Journal of Photovoltaics | Year: 2014

Full-size (156 x 156 mm 2) interdigitated back contact (IBC) solar cells have been developed with conventional industry processes. With PC1D simulation and short-flow experiment verification, we found that the tunnel junction shunting of rear n+/p + could be mitigated significantly by controlling the boron surface concentration; therefore, it is not necessary to form a gap between rear emitter and back surface field. Made by a novel yet relative simple process, the IBC cells preliminarily achieved 19.65% best efficiency with Jsc and V\rm oc as high as 40.5 mA/cm2 and 655 mV, respectively, while FF was only 73.9% due to the low pseudo fill factor (Pff) and high series resistance. Through the optimization of the rear pattern process, Pff was improved up to 82.5% and FF up to 77%. With further optimization of emitter, front surface field, passivation, and rear pattern design, the cells potentially can achieve up to 22.0% efficiency in the near future. © 2011-2012 IEEE.


Sidhu R.,Hareon Solar United States | Bennett M.,Formerly at BP Solar | Hmung G.,Formerly at BP Solar | Ren W.,Formerly at BP Solar | And 10 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2013

We report on interdigitated back-contact silicon solar cells with efficiencies above 18%, fabricated using laser fired silver for both base and emitter contacts. While laser fired aluminum contacts have been reported in the past, this is the first report to our knowledge describing a single-step laser process to dope the underlying silicon and create a point contact at the same time. Conventional industrial processes were used for texture, emitter diffusion and passivation. Dopant and metal grids for base and emitter were printed using high-throughput screen-printers. The best cell showed 632mV Voc, 39.7 mA/cm2 Jsc, and fill-factor of 0.72. © 2013 IEEE.


Xia Z.,Hareon Solar Technology Co. | Gao Y.,Hareon Solar Technology Co. | Tao L.,Hareon Solar Technology Co. | Li X.,Hareon Solar Technology Co. | And 7 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2013

Characterization of SiOx and Al2O3 passivation film and the effect on PERC cells performance were studied in details. Due to >2×1011 cm-2 positive fixed charge in SiOx film, inversion layer is formed on PERC rear side, so that pseudo-FF of cells decreases because of large J02. Additionally, it leads to bad low-light performance because the rear surface recombination velocity (RSRV) increases with the injection level decrease under inversion status. On the contrary, Al2O3 film with >2×1012 cm-2 negative fixed charge show total different properties and excellent passivation on PERC cells. Deposited by Al2O3/SiNx stack film, PERC cells achieved to 19.8% batch average efficiency. With selective emitter technology, the average efficiency can increase up to 20.0%. Additionally, the low light output and temperature coefficient of PERC cell are also improved comparing to conventional Al-BSF cell. PERC module made by 60 cells shows power output larger than 280W. © 2013 IEEE.


Xia Z.,Hareon Solar Technology Co. | Dong J.,Hareon Solar Technology Co. | Li X.,Hareon Solar Technology Co. | Ren C.,Hareon Solar Technology Co. | And 6 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2012

ALD Al2O3 can work as excellent passivation dielectric for both p- and n-type c-Si solar cells. In this paper we have demonstrated that ALD Al2O3 passivation properties are dependent on the reactants. Al2O3 synthesized by thermal ALD with TMA+ O3 is a robust candidate to be integrated into both high-temperature (screen printed) with Seff of 1.4 cm/s and low-temperature with Seff of 0.9 cm/s (such as LFC) metallization process flows for c-Si solar cells. Combined with Dit and Q total results, we believe a large number of oxygen dangling bonds (O DBs) at c-Si/ Al2O3 interface are the critical factor for restructuring interfacial SiOx during post deposition thermal treatment, and in turn improve passivation properties. However Al 2O3 with reactants of TMA+ H2O may be only suitable for low temperature metallization process, as hydrogen which passivates O DBs will escape and make O DBs active during the thermal process, which causes passivation properties to degrade. © 2012 IEEE.


Li X.,Hareon Solar Technology Co. | Tao L.,Hareon Solar Technology Co. | Xia Z.,Hareon Solar Technology Co. | Yang Z.,Hareon Solar Technology Co. | And 5 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2012

In this study, a well-controlled etch-back technique was developed using HF and HNO3 mixture solution to remove the boron depletion layer caused by post-oxidation step. The etching rate can be manipulated by changing HF proportion; meanwhile the sheet resistance variation can be maintained smaller than 10% after etching back. Nitric acid oxidation of Si technique was used to passivate the boron emitter before and after etch back. The presence of the surface boron depletion layer makes the surface boron concentration lower, which is better for low Dit at the surface after passivation, while it can also introduce extra recombination by making the electron and hole concentration closer at the surface. PC1D was used to simulate the results for further understanding the recombination in the whole emitter region. © 2012 IEEE.


Trademark
Hareon Solar Technology Co. | Date: 2010-06-25

Acidimeters for batteries; Electric accumulators for vehicles; Plates for batteries; Silicon chips; Solar batteries. Solar collectors; Solar energy receivers.


Trademark
Hareon Solar Technology Co. | Date: 2011-02-08

Aluminium silicate; Calcium silicate; Diatomaceous earth; Silicon; Silicone resins; Sodium silicate; Unprocessed plastics in all forms. Acidimeters for batteries; Electric accumulators for vehicles; Plates for batteries; Silicon chips; Solar batteries. Solar collectors; Solar energy receivers.


Trademark
Hareon Solar Technology Co. | Date: 2010-08-25

Computers; Radar apparatus; Surveying apparatus and instruments; Pressure indicators; Electricity mains (Materials for wires, cables); Galvanic cells; Grids for batteries; Accumulators, electric; Solar batteries; Sensor. Lumber; Roof flashing, not of metal; Roofing, not of metal, incorporating solar cells; Lighting slabs; Buildings, transportable, not of metal; Building glass; Refractory fiber.


Trademark
Hareon Solar Technology Co. | Date: 2012-01-19

Accumulators and batteries; Acidimeters for batteries; Electric accumulators for vehicles; Plates for batteries; Solar batteries.

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