Hanwa Electronic Ind. Co.

Wakayama-shi, Japan

Hanwa Electronic Ind. Co.

Wakayama-shi, Japan
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Scholz M.,IMEC | Scholz M.,Vrije Universiteit Brussel | Chen S.-H.,IMEC | Vandersteen G.,Vrije Universiteit Brussel | And 5 more authors.
IEEE Transactions on Device and Materials Reliability | Year: 2013

Three system-level electrostatic discharge (ESD) design methodologies are compared using an RF buffer amplifier as case study. First, the system-level ESD protection is designed with datasheet information. The obtained overdesigned ESD protection is optimized with the System-Efficient ESD Design (SEED) methodology. The SEED-based protection design is further optimized using human metal model testing and transient simulations. The final ESD protection design requires five times less area on the application board, and the capacitive loading is six times lower than when designing with datasheet information. © 2001-2011 IEEE.


Patent
Imec and Hanwa Electronic Ind. Co. | Date: 2010-06-30

Calibration method for calibrating transient behaviour of a TLP test system. The system comprises a TLP generator, probe needles, nominally impedance matched transmission lines and measurement equipment, connected between the transmission lines and the TLP generator, for detecting transient behaviour of a device under test by simultaneously capturing voltage and current waveforms as a result of generated pulses. The calibration method comprises (a) applying the TLP test system on an open and capturing first voltage and current waveforms; (b) applying the TLP test system on a calibration element having a known finite impedance and a known transient response and capturing second voltage and current waveforms; (c) transforming the captured first and second current and voltage waveforms to the frequency domain, and (d) determining calibration data for the transient behaviour of the TLP test system on the basis of the transformed first and second voltage and current waveforms.


Kuriyama T.,Kinki University | Takatsuji W.,Industrial Technology Center Of Okayama Prefecture | Itoh T.,Industrial Technology Center Of Okayama Prefecture | Maeda H.,Industrial Technology Center Of Okayama Prefecture | And 3 more authors.
IEEJ Transactions on Sensors and Micromachines | Year: 2014

Electrostatic field distribution measurement using a silicon micro-mirror array fabricated by Micro-Electro-Mechanical Systems (MEMS) process has been presented. The deflection angle of each micro-mirror, which is placed on a spherical surface and is deflected by electrostatic field, was measured optically using a two-dimensional optical scanner and a position sensitive detector (PSD). The obtained electrostatic data showed good agreement with Coulomb's law and the system was applied to measure the electrostatic field distribution of charged substance. © 2014 The Institute of Electrical Engineers of Japan.


Itoh T.,Industrial Technology Center Of Okayama Prefecture | Kuriyama T.,Kinki University | Nakaie T.,Hanwa Electronic Ind. Co. | Matsui J.,Hanwa Electronic Ind. Co. | And 2 more authors.
IEEJ Transactions on Sensors and Micromachines | Year: 2014

Asymmetric silicon micro-mirrors are fabricated by the anodic bonding of an ultra-thin silicon film on a glass substrate, followed by the fabrication of ultra-thin silicon microelectromechanical systems (MEMS) mirror structures by laser micro-processing. Laser micro-processing, which merges the direct laser fabrication of ultra-thin silicon and anodic bonding, is easier than the silicon-on-insulator-MEMS process. Typically, polished ultra-thin silicon warps under residual stress. However, a flat surface profile was achieved on the scanning mirror of the silicon micro-mirror by anodic bonding and uniform pressure application. By vibrating the asymmetric silicon micro-mirror with an external vibrating element, we obtained a horizontal operation of 118 Hz and a vertical operation of 11040 Hz at the resonance frequency. The Lissajous pattern was also projected on the screen using the horizontal and vertical operations. © 2014 The Institute of Electrical Engineers of Japan.


Sawada M.,Hanwa Electronic Ind. Co. | Shintani T.,Hanwa Electronic Ind. Co. | Hasegawa K.,Hanwa Electronic Ind. Co.
2016 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2016 | Year: 2016

Currently, in the assembly process of the electronic device occupies much trouble by CDM.CDM test is done after the package assembly. Therefore, if it failed by CDM test, it would be to spend a lot of time and cost from design changes to assembly. In recently, HBM test is possible to measure on the Wafer, it is possible to design changes before the assembly of the package. However, CDM test cannot be tested on the Wafer. In this study, it has performed an investigation and report to the test method of Small Capacitor Model on the Wafer is whether the place of the CDM test. © 2016 IEEE.


Itoh T.,Industrial Technology Center Of Okayama Prefecture | Kuriyama T.,Kinki University | Nakaie T.,Hanwa Electronic Ind. Co. | Matsui J.,Hanwa Electronic Ind. Co. | Miyamoto Y.,Hanwa Electronic Ind. Co.
IEEJ Transactions on Sensors and Micromachines | Year: 2015

We developed silicon micro-mirrors with two asymmetric axes for electrostatic field distribution measurements using a single external piezoelectric ceramic vibrating element. The 2D asymmetric silicon micro-mirrors were fabricated by using an SOI-MEMS process. The vibration transmissibility of the proposed mirror under a vacuum atmosphere was evaluated by dynamic analysis. We obtained the resonant frequency in the low-speed axis of 23.3 Hz and in the high-speed axis of 556.8 Hz respectively. To prevent a reduction in the amplitude width, we induced a 90° phase shift between the low- and high-speed axes at the resonance frequency. The ratio of the deformation between the low-speed axis of 30 Hz and the high-speed axis of 604 Hz was simulated to be 4.04. In measurement, the ratio of the deformation between the low-speed axis of 23.3 Hz and the high-speed axis of 556.8 Hz was 6.48. The difference between the calculated and experiment values were apparently due to the fabrication errors and frequency characteristics of piezoelectric ceramic vibrating element. A Lissajous pattern projected onto the screen. The scanning angle was a degree of 7.6 (total angle) in the low- and high-speed axis. We subsequently measured the electrostatic field distribution using the 2D asymmetric silicon micro-mirrors by means of the optical level method. © 2015 The Institute of Electrical Engineers of Japan.


Nakaie T.,Hanwa Electronic IND. CO. | Matsui J.,Hanwa Electronic IND. CO. | Miyamoto Y.,Hanwa Electronic IND. CO. | Kuriyama T.,Kinki University | And 4 more authors.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings | Year: 2013

We first performed real-time visualization measurement of electrostatic potential on the surface of a dielectric plate with a small charged metal plate. Time change of the electric potential differed with the resistance of dielectric plate. We confirmed that electrostatic charge had penetrated into a dielectric plate. © 2013 ESD Association.


Itoh T.,Industrial Technology Center Of Okayama Prefecture | Kuriyama T.,Kinki University | Nakaie T.,Hanwa Electronic Ind. Co. | Matsui J.,Hanwa Electronic Ind. Co.
IEEJ Transactions on Sensors and Micromachines | Year: 2016

We develop 2D asymmetric micromirrors with high vibration transmissibility for a glass-like retinal display according to the National Television System Committee standard via dynamic analysis using a single external piezoelectric ceramic vibrating element. The high-speed axis can attain a relatively much larger rotation angle by the addition of translational motion that is equal to the resonant frequency directly transmitted by the low-speed axis of a rotation oscillation system. Moreover, we fabricate 2D asymmetric silicon micromirrors using a silicon-on-insulator microelectromechanical system process and obtain 70.5-Hz and 19510-Hz resonant frequencies along the low- and high-speed axes, respectively. Furthermore, we measure the scanning range on a Lissajous pattern using a scale; the scanning angles are 12.4° along the low-speed axis and 23.7° along the high-speed axis. © 2016 The Institute of Electrical Engineers of Japan.


Kuriyama T.,Kinki University | Aoi T.,Kinki University | Maeda H.,Industrial Technology Center Of Okayama Prefecture | Itoh T.,Industrial Technology Center Of Okayama Prefecture | And 4 more authors.
Sensors and Materials | Year: 2011

An optical system for electrostatic field distribution measurement using a micromirror array fabricated by a micro-electromechanical systems (MEMS) process has been designed. Each micromirror is suspended by two thin torsion bars, which is made by a silicon-on-insulator (SOI) wafer fabrication process. The deflection of each mirror by an electrostatic field is measured optically using a two-dimensional optical scanner and a position-sensitive detector (PSD). Another optical system for increasing the sensitivity has also been proposed, which will widen the voltage measurement range. The electrostatic field distribution measurement system was applied to a human body model, and the removal effect of electricity was tested using removing tools.


Patent
Hanwa Electronic Ind. Co. | Date: 2012-07-06

An integral value measuring circuit includes an operational amplifier and a capacitor connected between input and output sides thereof, an electric potential of an output terminal where a predetermined resistance element connected to an output side of the operational amplifier is being zero, positive and negative DC voltage generating circuits which comprise positive and negative power sources, respectively, at the output side of the operational amplifier, the positive and negative DC voltage generating circuits and being connected to positive and negative power terminals, respectively, of the operational amplifier through switches, and a connection line between the negative power terminal and one switch and a connection line between the positive power terminal and another switch being connected to the positive and negative power terminals, respectively, of the operational amplifier through cross resistance elements having resistance values negligible compared to a leakage resistance value of the switches.

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