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Osan, South Korea

File:Hanshin Univ.gifHanshin University is a private university in the Seoul National Capital Area of South Korea. The campus is located in Osan City, Gyeonggi province. The current president is Yoon, Eung Jin. Wikipedia.

Jung S.-M.,Hanshin University
Journal of Next Generation Information Technology | Year: 2013

This paper proposes an active capacitive sensing circuit for fingerprint sensors, which includes a pixel level charge-sharing and charge pump to replace an ADC. This paper also proposes the operating algorithm for 16-level gray scale image. The active capacitive technology is more flexible and can be adjusted to adapt to a wide range of different skin types and environments. The proposed novel circuit is composed with unit gain buffer, 6-stage charge pump and analog comparator. The proper operation is validated by the HSPICE simulation of one pixel with condition of 0.35μm typical CMOS parameter and 3.3V power. Source

Jeong T.,Hanshin University
Far East Journal of Electronics and Communications | Year: 2015

The electronic and magnetic properties of CuFeO2 have been calculated using the self-consistent full potential nonorthogonal local orbital minimum basis scheme based on the density functional theory. We investigated the electronic structure to obtain the correct ground state of CuFeO2. The local spin density approximation calculations show that CuFeO2 is a metal with the conducting electrons at the Fermi level being Fe-like ions in the low spin state and a magnetic moment of 0.95μB. The Cu 3d band is placed above the Fe 3d band with respect to the Fermi energy. © 2015 Pushpa Publishing House. Source

Jeong T.,Hanshin University
Solid State Communications | Year: 2010

We investigated the electronic properties of CeIrSi3 using density functional theory. The electronic structure of CeIrSi3 was calculated with the spin-orbit interactions and the on-site Coulomb potential for the Ce-derived 4f orbitals. The Ce 4f bands are located near the Fermi level. The fully relativistic band structure scheme shows that the spin-orbit coupling splits the 4f states into two manifolds. It was found that the total number of DOS at the Fermi level by the fully relativistic scheme corresponds to the large electronic specific heat coefficient γb = 9.88 mJ/K2 mol and underestimates the experiment value by a factor of 12.1. © 2009 Elsevier Ltd. All rights reserved. Source

Jung S.,Hanshin University
International Journal of Smart Home | Year: 2015

This paper implements 80x64 array high sensitive fingerprint sensor with the parasitic insensitive charge transfer circuit. The fingerprint sensor cell uses an active output voltage feedback integrator. The parasitic insensitive charge transfer circuit includes a differential amplifier and two switches to remove parasitic capacitance and transfer charge. The operation is validated by HSPICE for one-pixel and RTL simulation including logic synthesis for the full chip design on condition of 0.18μm typical CMOS process and 1.8V power. The voltage difference between a ridge and valley is about 215mV after 10 clock cycles and 367mV after 20 clock cycles. The maximum frequency of cell operation is 10MHz. The layout is performed by full custom flow for one-pixel and auto P&R for the full chip. The area of the full chip is 4943μm x 3943μm and the gate count is 542,000. The area of one-pixel is 50μm x 50μm. Pitch is 50μm and image resolution is 508dpi. © 2015 SERSC. Source

Yeo H.,Hanshin University
International Journal of Multimedia and Ubiquitous Engineering | Year: 2015

This paper proposes a fingerprint sensor cell and its structure using pseudo-direct scheme. The fingerprint sensor cell uses an internal transmitted (Tx) plate instead of using an external bezel as a contact for direct signal driving to finger. It uses an active output voltage feedback (AOVF) integrator and multiple integration scheme to maximize the sensitivity and improve signal-to-noise ratio (SNR) as well. The circuit models of combined fingerprint and Tx electrode were analyzed and simulated using MATLAB. And the proposed fingerprint sensor were designed and simulated with standard 0.35μm CMOS technology. Simulations verified that the proposed fingerprint sensor using pseudo-direct scheme can be effectively used as a personal authentication method especially in mobile applications. © 2015, International Journal of Multimedia and Ubiquitous Engineering.All rights reseved. Source

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