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Chaozhou, China

Wang F.,Yangtze University | Lin D.,Hansan Normal University
Communications in Computer and Information Science | Year: 2011

In order to stimulate the activity of executive and staff in agricultural enterprises and improve management measures, we adopt semi-log weighted least square regression method to analyze the correlation between enterprise performance and compensation of executive and staff. Analysis results show that correlation between enterprise performance and the total and average compensation of senior executives, the highest executive's pay and staffs' average salaries is obvious. And the correlation rises quickly at first, then at a lower speed to a certain level, and even declines in the end. The increase of highest executive's pay can maximally improve enterprise performance. And increasing the total executive compensation can also enhance enterprise performance to a certain extent. © 2011 Springer-Verlag Berlin Heidelberg. Source


Lin Z.-W.,Central China Normal University | Lin Z.-X.,Central China Normal University | Song C.,Hansan Normal University | Zhang Y.,Central China Normal University | And 6 more authors.
Faguang Xuebao/Chinese Journal of Luminescence | Year: 2013

a-SiO0.35N0.59:H films were fabricated by very high frequency plasma enhanced chemical vapor deposition method and used as the active layers in the light-emitting diodes. Strong red electroluminescence (EL) from the diode can be clearly observed at room temperature. The EL from the diode is peaked at around 715 nm, very similar to that of the PL spectra. The turn-on voltage for the device is 8 V. It is also found that there is a linear relationship between the integrated EL intensity and the injected current. In addition, the I-V characteristics indicates that the Pool-Frenkel (P-F) emission behavior is dominant in the carrier transport process in the diode. Combining with the microstructure analysis for the luminescent active layer, the red electroluminescence is tentatively suggested from the recombination of electron-hole pairs at band tail states of a-SiO0.35N0.59:H layer. Source

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