Hangzhou Silan Azure Co.

Hangzhou, China

Hangzhou Silan Azure Co.

Hangzhou, China
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Chen Z.,Zhejiang University | Huang J.,Zhejiang University | Yang Y.,Zhejiang University | Wang Y.,Zhejiang University | And 7 more authors.
RSC Advances | Year: 2012

Rhombic LiNbO 3 nanowires along the c-axis were synthesized by using wire-like NH 4Nb 3O 8 as the starting material based on a molten salt reaction with Li 2CO 3 powders in the KCl melt. Meanwhile, the as-synthesized LiNbO 3 nanowires exhibit excellent piezoactivity. An effective piezoelectric coefficient of around 100 pm V -1 could be obtained. This journal is © The Royal Society of Chemistry 2012.


Chen D.,Zhejiang University | Lu J.-G.,Zhejiang University | Huang J.-Y.,Zhejiang University | Jin Y.-Z.,Hangzhou Silan Azure Co. | And 2 more authors.
Wuji Cailiao Xuebao/Journal of Inorganic Materials | Year: 2013

Al-doped ZnO (AZO) thin films were prepared by pulsed laser deposition under different oxygen pressures. AZO films with highly transparent conductive properties were obtained at 0.1 Pa. AZO films were used on GaN-based light-emitting diodes (LEDs) as transparent contact layers. At a forward current of 20 mA, the 520 nm electroluminescence peak was evidently observed, with a high working voltage of 10 V. The brightness of the chip was enhanced as the forward current increased. Secondary ion mass spectra revealed that the high working voltage of the LED might be triggered by the change of material conductivity and the passivation layer formed at the AZO/GaN interface.


Li Z.,Fudan University | Liu X.-Y.,Fudan University | Zhang L.-Q.,Fudan University | Zhao S.-X.,Fudan University | And 6 more authors.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | Year: 2014

In this paper, an AlGaN/GaN based MIS-HEMT using Al2O3 dielectric as gate insulator was fabricated. We adopted the patterned sapphire as the substrate (PSS) of high-quality AlGaN GaN epitaxial layers. We also studied the influence of different gate-drain space (Lgd) on breakdown voltage (VBD) and on-state resistance (Ron) of GaN HEMT fabricated on patterned sapphire substrate. A breakdown voltage of 105 V was obtained with the Lgd of 2 μm and gate width of 32 μm. The specific on resistance was 4.7 Ω·mm when Lgd equals 0.5 μm. Meanwhile, it is found that the devices fabricated on the wet-etched pyramidal patterned sapphire substrate GaN exhibit better drive current stability than that of the devices on the conventional GaN-on-Sapphire substrate. © 2014 IEEE.


Xu M.,South China University of Technology | Zhang H.,Hangzhou Silan Azure Co. | Zhou Q.,South China University of Technology | Wang H.,South China University of Technology
Applied Optics | Year: 2016

Red-green-blue white light-emitting diodes (RGB-WLEDs) have great potential as commercial solid-state lighting devices, as well as visible light communication because of their high color-rendering index (CRI) and high response frequency. The quality of light of an RGB-WLED strongly depends on its spectral parameters. In this study, we fabricated RGB-WLEDs with red, blue, and green LEDs and measured the spectral power distribution (SPD). The experimental SPD is consistent with the calculated spectrum. We also measured the SPDs of LEDs with different peak wavelengths and extracted the spectral parameters, which were then used for modeling. We studied the effect of the wavelength and the full width at half-maximum (FWHM) on both the color rendering index and the luminous efficiency (LE) of the RGB-WLED using simulations. We find that the LE improves as the wavelength of the blue LED increases and the wavelength of the red LED decreases. When the wavelength of the green LED increases, the LE increases first, but later decreases. The CRI of the RGB-WLED increases with the wavelengths of the red, blue, and green LEDs first, but then decreases. The optimal wavelengths and FWHMs for maximum color-rendering and LE of the blue, green, and red LEDs are 466, 536, 606 nm; and 26.0, 34.0, and 19.5 nm, respectively. © 2016 Optical Society of America.


Zhang H.-X.,Hangzhou Silan Azure Co. | Zhang C.-M.,Fudan University | Wang P.-F.,Fudan University
China Semiconductor Technology International Conference 2015, CSTIC 2015 | Year: 2015

Ruthenium dioxide (RuO2) thin films can be used as the electrode material for future technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films of RuO2 on SiO2 using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)2] as the precursor and oxygen (O2) plasma as the reducing agent. The thermal stability of the deposited films were investigated in the N2 ambient and in the forming-gas environments using rapid thermal processing (RTP). High-resolution transmission electron microscope (HR-TEM) and atomic force microscopy (AFM) were also employed to explore the growth mechanism of the RuO2 thin films on SiO2. © 2015 IEEE.


Cong H.,Hangzhou Silan Azure Co. | Xu X.,Hangzhou Silan Azure Co. | Jiang Z.,Hangzhou Silan Azure Co. | Jin Y.,Hangzhou Silan Azure Co. | And 3 more authors.
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2013

The applications of ZnO:Al substitute ITO for transparent conductive layer in GaN-based LED were researched. AZO films were prepared by pulsed laser deposition and magnetron sputtering. Then the physical mechanism of poor ohmic contacts between AZO and p-type GaN layer was analyzed, and the contact resistance was improved by inserting ITO layer simultaneously. For the experiments, ITO 20 nm/AZO 500 nm composite transparent conductive layer was prepared successfully, and the GaN-based green LED was obtained with the brightness of 380.88 mcd, wavelength of 525.74 nm and voltage of 3.35 V. The result is equivalent to the performance of a single ITO transparent conductive layer, and it reduces the usage of ITO and the process cost.


Patent
Hangzhou Silan Azure Co. | Date: 2012-09-21

The present invention provides a semiconductor light emitting diode (LED) device and a formation method thereof. The device comprises: an active layer; a P-type semiconductor layer and an N-type semiconductor layer respectively located at two sides of the active layer; a positive electrode welding layer electrically connected to the P-type semiconductor layer; and a negative electrode welding layer electrically connected to the N-type semiconductor layer. The material of the positive electrode welding layer and/or the negative electrode welding layer is an aluminum alloy material. The present invention is capable of better meeting requirements of the LED device for the electrode welding layers, improving electro-migration resistance under large current, and improving the thermal stability of the device. Compared with a conventional aluminum material, the service life of the device is increased, and control over industrialization cost is facilitated.


Patent
Hangzhou Silan Azure Co. | Date: 2012-08-24

The present invention intends to provide a shower of a large diameter MOCVD reactor, and the difficulty for manufacturing the shower does not obviously increase when its size increases. The shower of a large diameter MOCVD reactor of the present invention comprises III group chamber, V group chamber and a cooling water chamber, and it is characterized in that, III group chamber, V group chamber and cooling water chamber are all separated as N chambers, wherein N is a natural number greater than or equal to 2 and each chamber is an individual unity.

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