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Hangzhou, China

Li Z.,Fudan University | Liu X.-Y.,Fudan University | Zhang L.-Q.,Fudan University | Zhao S.-X.,Fudan University | And 6 more authors.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | Year: 2014

In this paper, an AlGaN/GaN based MIS-HEMT using Al2O3 dielectric as gate insulator was fabricated. We adopted the patterned sapphire as the substrate (PSS) of high-quality AlGaN GaN epitaxial layers. We also studied the influence of different gate-drain space (Lgd) on breakdown voltage (VBD) and on-state resistance (Ron) of GaN HEMT fabricated on patterned sapphire substrate. A breakdown voltage of 105 V was obtained with the Lgd of 2 μm and gate width of 32 μm. The specific on resistance was 4.7 Ω·mm when Lgd equals 0.5 μm. Meanwhile, it is found that the devices fabricated on the wet-etched pyramidal patterned sapphire substrate GaN exhibit better drive current stability than that of the devices on the conventional GaN-on-Sapphire substrate. © 2014 IEEE.

Zhang H.-X.,Hangzhou Silan Azure Co. | Zhang C.-M.,Fudan University | Wang P.-F.,Fudan University
China Semiconductor Technology International Conference 2015, CSTIC 2015 | Year: 2015

Ruthenium dioxide (RuO2) thin films can be used as the electrode material for future technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films of RuO2 on SiO2 using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)2] as the precursor and oxygen (O2) plasma as the reducing agent. The thermal stability of the deposited films were investigated in the N2 ambient and in the forming-gas environments using rapid thermal processing (RTP). High-resolution transmission electron microscope (HR-TEM) and atomic force microscopy (AFM) were also employed to explore the growth mechanism of the RuO2 thin films on SiO2. © 2015 IEEE.

Xu M.,South China University of Technology | Zhang H.,Hangzhou Silan Azure Co. | Zhou Q.,South China University of Technology | Wang H.,South China University of Technology
Applied Optics | Year: 2016

Red-green-blue white light-emitting diodes (RGB-WLEDs) have great potential as commercial solid-state lighting devices, as well as visible light communication because of their high color-rendering index (CRI) and high response frequency. The quality of light of an RGB-WLED strongly depends on its spectral parameters. In this study, we fabricated RGB-WLEDs with red, blue, and green LEDs and measured the spectral power distribution (SPD). The experimental SPD is consistent with the calculated spectrum. We also measured the SPDs of LEDs with different peak wavelengths and extracted the spectral parameters, which were then used for modeling. We studied the effect of the wavelength and the full width at half-maximum (FWHM) on both the color rendering index and the luminous efficiency (LE) of the RGB-WLED using simulations. We find that the LE improves as the wavelength of the blue LED increases and the wavelength of the red LED decreases. When the wavelength of the green LED increases, the LE increases first, but later decreases. The CRI of the RGB-WLED increases with the wavelengths of the red, blue, and green LEDs first, but then decreases. The optimal wavelengths and FWHMs for maximum color-rendering and LE of the blue, green, and red LEDs are 466, 536, 606 nm; and 26.0, 34.0, and 19.5 nm, respectively. © 2016 Optical Society of America.

Hangzhou Silan Azure Co. | Date: 2012-09-21

The present invention provides a semiconductor light emitting diode (LED) device and a formation method thereof. The device comprises: an active layer; a P-type semiconductor layer and an N-type semiconductor layer respectively located at two sides of the active layer; a positive electrode welding layer electrically connected to the P-type semiconductor layer; and a negative electrode welding layer electrically connected to the N-type semiconductor layer. The material of the positive electrode welding layer and/or the negative electrode welding layer is an aluminum alloy material. The present invention is capable of better meeting requirements of the LED device for the electrode welding layers, improving electro-migration resistance under large current, and improving the thermal stability of the device. Compared with a conventional aluminum material, the service life of the device is increased, and control over industrialization cost is facilitated.

Chen D.,Zhejiang University | Lu J.-G.,Zhejiang University | Huang J.-Y.,Zhejiang University | Jin Y.-Z.,Hangzhou Silan Azure Co. | And 2 more authors.
Wuji Cailiao Xuebao/Journal of Inorganic Materials | Year: 2013

Al-doped ZnO (AZO) thin films were prepared by pulsed laser deposition under different oxygen pressures. AZO films with highly transparent conductive properties were obtained at 0.1 Pa. AZO films were used on GaN-based light-emitting diodes (LEDs) as transparent contact layers. At a forward current of 20 mA, the 520 nm electroluminescence peak was evidently observed, with a high working voltage of 10 V. The brightness of the chip was enhanced as the forward current increased. Secondary ion mass spectra revealed that the high working voltage of the LED might be triggered by the change of material conductivity and the passivation layer formed at the AZO/GaN interface.

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