Hangzhou Jinggong Electromechanical Research Institute Co.

Hangzhou, China

Hangzhou Jinggong Electromechanical Research Institute Co.

Hangzhou, China
SEARCH FILTERS
Time filter
Source Type

Lu X.,Hangzhou Jinggong Electromechanical Research Institute Co. | Zhao B.,Hangzhou Jinggong Electromechanical Research Institute Co. | Xu F.,Hangzhou Jinggong Electromechanical Research Institute Co. | Wang C.,Hangzhou Jinggong Electromechanical Research Institute Co.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2015

According to different degree of cold corresponding crystal growth orientation and grain size, the polysilicon ingot furnace developed by the hot heat exchanger at the bottom to adjust mechanical control, obtain different silicon crystal with different cold conditions. Through comparison and analysis, results shown that, high quality silicon crystal is easy to obtain with large grain size, and directional solidification effect is good, growth direction is perpendicular to the growth interface at large undercooling condition. ©, 2015, Science Press. All right reserved.


Feng X.-Y.,Hangzhou Jinggong Electromechanical Research Institute Co. | Wang C.,Hangzhou Jinggong Electromechanical Research Institute Co. | Zhao B.,Hangzhou Jinggong Electromechanical Research Institute Co. | Xu F.-H.,Hangzhou Jinggong Electromechanical Research Institute Co. | Gao J.,Hangzhou Jinggong Electromechanical Research Institute Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2013

According to the basic theory of electromagnetic fields, this paper calculates the alternating magnetic field and electromagnetic force in silicon crystal growth furnace by ANSYS, adopts the 3D method to analyze electromagnetic fields generate by AC, and with sound experimental evidence. The new result shows that the silicon melt suffers the electromagnetic force by the spatial distribution of circumferential direction, and the largest electromagnetic force exists in the edge part. The direction of the electromagnetic force under the different voltage phase sequence is contrary, thereby leading to different flows of the silicon melt, the simulation results and experimental phenomena with good agreement. All of these will provide a valuable reference for the development of silicon crystal growth technique by the ingot way.

Loading Hangzhou Jinggong Electromechanical Research Institute Co. collaborators
Loading Hangzhou Jinggong Electromechanical Research Institute Co. collaborators