Yamanishi M.,Hamamatsu Photonics K K
Optics Express | Year: 2012
Intrinsic linewidth formula modified by taking account of fluctuation-dissipation balance for thermal photons in a THz quantumcascade laser (QCL) is exhibited. The linewidth formula based on the model that counts explicitly the influence of noisy stimulated emissions due to thermal photons existing inside the laser cavity interprets experimental results on intrinsic linewidth, ∼91.1 Hz reported recently with a 2.5 THz bound-to-continuum QCL. The line-broadening induced by thermal photons is estimated to be ∼22.4 Hz, i.e., 34% broadening. The modified linewidth formula is utilized as a bench mark in engineering of THz thermal photons inside laser cavities. © 2012 Optical Society of America.
Hamamatsu Photonics K K | Date: 2015-01-23
A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.
Hamamatsu Photonics K K | Date: 2015-06-26
An apparatus for inspecting an integrated circuit is an apparatus for inspecting an integrated circuit having a semiconductor substrate and a circuit portion formed on a front face a side of the semiconductor substrate. The apparatus comprises a light generation unit for generating light L for irradiating the integrated circuit, a wavelength width adjustment unit, for adjusting the wavelength width of the light irradiating the integrated circuit, an irradiation position adjustment unit for adjusting the irradiation position of the light irradiating the integrated circuit, and a light detection unit for detecting the light from the integrated circuit when the light from the light generation unit irradiates the circuit portion through a rear face of the semiconductor substrate.
Hamamatsu Photonics K K | Date: 2015-07-02
Hamamatsu Photonics K K | Date: 2015-02-20
A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions