Nanjing Guobo Electronics Co.

Nanjing, China

Nanjing Guobo Electronics Co.

Nanjing, China
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Chen T.,Nanjing Electronic Devices Institute | Chen T.,CETC Deqing Huaying Electronics Co. | Chen Z.,Nanjing Guobo Electronics Co. | Jiang H.,Nanjing Electronic Devices Institute | And 4 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2017

In this paper, a GaN HEMT for base station RF power application has been presented. The gate leakage current of the GaN HEMT is greatly reduced by NiAu schottky gate contact, which improves device breakdown voltage. Combining the optimization of V gate, the breakdown voltage increases by more than 30%. Based on the design of double field plate, 50V GaN HEMT power device with 0.5 μm gate length for base station application was fabricated. Within the bandwidth between 2.3 GHz and 2.7 GHz, the GaN HEMT exhibits a peak output power of 280W, a PAE of 64%, and a distinguished linearity value of -30 dBc@PAR=5 dB. The device is stable under RF mismatch test with VSWR > 5:1. The MTTF of the device is longer than 4×106hours at 150℃ junction temperature. © 2017, Editorial Office of «Res. Prog. SSE». All right reserved.


Zhang Y.,National and Local Joint Engineering Laboratory of RF Integration and Micro Assembly Technology | Zhang Y.,Nanjing University of Posts and Telecommunications | Zhang Y.,Nanjing Southeast University | Meng Q.,Nanjing Southeast University | And 12 more authors.
Journal of Sensors | Year: 2017

A single channel 2 GSps, 8-bit folding and interpolation (F&I) analog-to-digital converter (ADC) with foreground calibration in TSMC 90 nm CMOS technology is presented in this paper. The ADC utilizes cascaded folding, which incorporates an interstage sample-and-hold amplifier between the two stages of folding circuits to enhance the quantization time. A master-slave track-and-hold amplifier (THA) with bootstrapped switch is taken as the front-end circuit to improve ADC's performance. The foreground digital assisted calibration has also been employed to correct the error of zero-crossing point caused by the circuit offset, thus improving the linearity of the ADC. Chip area of the whole ADC including pads is 930 μm × 930 μm. Postsimulation results demonstrate that, under a single supply of 1.2 volts, the power consumption is 210 mW. For the sampling rate of 2 GSps, the signal to noise and distortion ratio (SNDR) is 45.93 dB for Nyquist input signal. © 2017 Yi Zhang et al.


Zhang H.,Nanjing Guobo Electronics Co. | Miao Y.,Nanjing Guobo Electronics Co. | Ren X.,Nanjing Electronic Devices Institute | Zhang J.,Nanjing Electronic Devices Institute
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

This paper presents the design and performance of a 100.0 MHz quartz crystal oscillator employing a combination of technologies to achieve good spectral performance under vibration. The measurements of the oscillator show a static phase noise of -143.0 dBc/Hz@1 kHz, -156.8 dBc/Hz@10 kHz. Under random vibration, the measurements of the oscillator show a phase noise of -137.4 dBc/Hz@1 kHz, -150.9 dBc/Hz@10 kHz.


Zheng Y.,Nanjing Guobo Electronics Co. | Wu J.,Nanjing Guobo Electronics Co. | Qian F.,Nanjing Electronic Devices Institute | Chen X.,Nanjing Guobo Electronics Co. | And 3 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

The surface mount microwave package based on AlN multilayer substrate has been fabricated by using vertical transition for signal from bottom to top surface. This transition shows that the return loss is less than -15 dB and the insertion loss is less than 1.0 dB. A packaged 6~18 GHz amplifier demonstrates the package dimension of 5 mm×5 mm×1.2 mm, less than -10 dB return loss in band, 15 dB gain and 1 dB gain flatness. Another C-band 5 W power amplifier by this packaging technique has the dimension of 8 mm×8 mm×1.2 mm, and demonstrates less than -10 dB return loss and 25 dB gain in band, 37 dBm saturation output power and 35% power-added-efficiency. The performance of the packaged amplifier can meet the requirements of microwave communication and radar. It is suitable for mass production because the device can be mounted by reflow.


Chen L.,Nanjing Guobo Electronics Co. | Chen L.,Nanjing Electronic Devices Institute | Chen X.,Nanjing Guobo Electronics Co. | Chen X.,Nanjing Electronic Devices Institute | And 5 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2015

A broadband active down-mixer using 0.18 μm SOI CMOS process for digital phased-array radar application was designed. A RF input amplifier, a LO amplifier, a Gilbert mixer and an IF amplifier were integrated in this chip, which was able to output differential signal directly and single-ended signal by an off-chip balun. The measurements show that the RF and LO input VSWR is below 2 from 0.7 GHz to 4.0 GHz, while the IF output VSWR is below 2 from 25 MHz to 1 GHz. The power conversion gain is 10 dB and the output 1 dB compression point is 3.3 dBm when the chip is used for differential output. The supply voltage is 2.5 V and the DC current is 64 mA. The chip area is only 1.0 mm×0.9 mm. ©, 2015, NUAA Printing House. All right reserved.


Cai X.,Nanjing Southeast University | Yu X.,Nanjing Southeast University | Shi X.,Nanjing Guobo electronics Co. | Qian J.,Applied Technology Internet | And 2 more authors.
ISAP 2013 - Proceedings of the 2013 International Symposium on Antennas and Propagation | Year: 2013

In this paper, a quantum communication routing protocol is designed for quantum ad hoc network. This protocol is on-demand routing based on EPR numbers shared by adjacent nodes, concerning that it is a limited source. When quantum channel is established, quantum states from one quantum device can be teleport to another even when they do not share EPR pairs wirelessly. Part of information transferred by classic channel can be dealt with using simple logics. In this way, the goal of safety communication between source and destination is realized, improving the weakness of ad hoc network such as Eavesdropping and Active attacks. In terms of time complexity, the mechanism transports a quantum bit in time almost the same as the quantum teleportation does regardless of the number of hops between the source and destination. © 2013 Antenna Society of the Chinese Institute of Electronics.


Li N.,Nanjing Guobo Electronics Co. | Ye J.,Nanjing Guobo Electronics Co. | Yang L.,Nanjing Guobo Electronics Co.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2015

A type of GaAs small size transceiver chip product for 802.11 b/g/n WIFI wireless communication system was introduced. The chip was designed by using 0.5 μm GaAs PHEMT foundry including Enhancement/Depletion FET. The chip was built up by three parts, including SP3T switch, 2.4 GHz LNA and TTL driver. It could be applied in four work states, including receive, bypass, bluetooth, transmit and could provide low noise, high gain, high isolation and low power dissipation, etc. Under receive mode, gain≥13 dB@2.4 GHz, NF≤2 dB@2.4 GHz, work current≤15 mA. Under bluetooth and transmit mode, its 1 dB compression point≥28 dBm. At the same time, this chip was used to integrate inverter driver which could support 1.8/33 V TTL. This transceiver chip can be used in most of 2.4 GHz WIFI(Wireless Fidelity) wireless transferring system. ©, 2015, NUAA Printing House. All right reserved.


Zhu Y.,Nanjing Electronic Devices Institute | Xu Z.,Nanjing Electronic Devices Institute | Xu Z.,Nanjing Guobo Electronics Co. | Dai L.,Nanjing Electronic Devices Institute | And 2 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

The paper provides a new designed structure for LTCC low pass filter. Two low pass filters are used for transmitter channel in an antenna switch module. Their whole size is only 2.5 mm×3.2 mm×0.75 mm with good performance. The insertion loss of the GSM850/900 MHz LPF is only 0.75 dB, the second and third harmonic suppression is 23 dBc and 40 dBc respectively. The insertion loss of the GSM1 800/1900 MHz LPF is less than 0.7 dB, the second and third harmonic suppression is 26 dBc and 28 dBc respectively.


Qu J.,Nanjing Electronic Devices Institute | Zhang Y.,Nanjing Electronic Devices Institute | Zhang Y.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Zhang Y.,Nanjing Guobo Electronics Co. | Qian F.,Nanjing Electronic Devices Institute
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

This paper presents a dual-stage, fully-differential track-and-hold circuit, in which both stages have independent clock buffer, and can be configured to track mode independently. This circuit is implemented with 1 μm GaAs HBT technology with the area of 1.8 mm×2 mm and the power consumption of 2.75 W. The proposed track-and-hold circuit is capable of operating under 1 GS/s, and sampling bandwidth exceeds 7 GHz with 250 mV peak to peak single-ended input; It has 8 bit ENOB when the input single-ended input signal is under 250 mV peak to peak with frequency from DC to 2 GHz.


Jiang D.,Nanjing Guobo Electronics Co. | Jiang D.,Nanjing Electronic Devices Institute | Chen X.,Nanjing Guobo Electronics Co. | Chen X.,Nanjing Electronic Devices Institute | And 2 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

A high power millimeter wave single-pole double-through(SPDT) switch MMIC is designed and fabricated using 76.2 mm(3 inch) wafer GaAs PIN technology. By using shunt SPDT switch configuration, high power performance can be obtained. Over the 30 to 36 GHz operating bandwidth for on-chip measurement the path in ON state appears less than 1.0 dB insertion loss and better than 1.5 VSWR. The path in OFF state appears large than 34 dB isolation.In ON state, the input power for this switch at 0.5 dB compression point is higher than 5 W.

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