Guangdong Provincial Key Laboratory of Optomechatronics

Shenzhen, China

Guangdong Provincial Key Laboratory of Optomechatronics

Shenzhen, China

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Hu M.,Tsinghua University | Hu M.,Raybow Optoelectronics Ltd. Inc. | Hu M.,Guangdong Provincial Key Laboratory of Optomechatronics | Wang W.M.,Tsinghua University | And 23 more authors.
Optics InfoBase Conference Papers | Year: 2016

COMD power upto 29.4W under long pulse duration of 1ms has been realized in a 915nm quantum-well laser with 95μm emitting width. We present the design, fabrication, characterization and failure analysis of such broad-area lasers. © OSA 2016.


Shi X.,Tsinghua University | Shi X.,Guangdong Provincial Key Laboratory of Optomechatronics | Zou C.,Tsinghua University | Zou C.,Guangdong Provincial Key Laboratory of Optomechatronics | And 8 more authors.
Tribology International | Year: 2017

In this paper, a significant improvement of chemical-mechanical polishing on gallium nitride with S2O8 2 −-Fe2+ based slurry is presented in detail. The results indicate that the S2O8 2 −-Fe2+ additives possessed obvious effect to enhance the polishing efficiency of GaN, and successfully achieved good surface quality after polishing. The addition of complexing agent obviously improves the stability of catalytic system. Besides, we also studied the special change rule of atomic step-terrace topography from the surface of GaN to describe the material removal mechanism during CMP process. The results show that the removal of materials by CMP follows rigid rules, which may help to improve the material removal mechanism of CMP. © 2016 Elsevier Ltd


Qiu B.,Tsinghua University | Qiu B.,Guangdong Provincial Key Laboratory of Optomechatronics | Wang W.,Raybow Optoelectronics Ltd. Inc. | Liu W.,Raybow Optoelectronics Ltd. Inc. | And 7 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

We report on our design and fabrication of 1470 nm high power InGaAlAs quantum well lasers. It is found that the 2-mm-long-cavity devices with aperture size of 96 μm can reach maximum power of around 4.2 W. The threshold is around 500 mA, and slope efficiency is about 0.42 W/A. Apart from the excellent external quantum efficiency and thermal performance, devices also show reduced beam divergence which is about 30°. Accelerated life-time test has also been performed to determine the reliability performance. Thus far more than 9000 life-test-hour has been accumulated, and there is no detectable sign of the power degradation, indicating our devices are extremely reliable. © 2016 SPIE.


Hu H.M.,Tsinghua University | Hu H.M.,Guangdong Provincial Key Laboratory of Optomechatronics | Qiu B.,Tsinghua University | Qiu B.,Guangdong Provincial Key Laboratory of Optomechatronics | And 6 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

We report on our design and fabrication of very high power semiconductor lasers based on a core-aluminum-free (CAF) active structure. The optical power of as high as 45 W, limited by the thermal roll-over, has been obtained when the single emitter devices are tested under quasi-continuous wave (QCW) conditions, and more than 10 W has been acquired at the operation current of 10 A under continuous wave (CW) conditions. For 10 mm long bar chips, emitting power of up to 200 W is attainable for the operation current of 200 A. The lasers also exhibit excellent slope efficiency of about 1.3 W/A and beam divergence of only 25 °. © 2016 SPIE.


Qiu B.,Tsinghua University | Qiu B.,Guangdong Provincial Key Laboratory of Optomechatronics | Hu H.M.,Tsinghua University | Hu H.M.,Guangdong Provincial Key Laboratory of Optomechatronics | And 7 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

We report on our design and fabrication of 830 nm high power semiconductor lasers with extremely low beam divergence. Here we propose a novel approach in which by combining asymmetric waveguide and a feature called "pins" together, we were able to design an optimized epi structure which not only produces a beam divergence of less than 16°, but also has very good growth tolerance as well. Tested devices show the beam divergence is as small as 13°, yet they still retain very high slope efficiency of around 1.15 W/A and low threshold current of 400 mA for the devices with cavity length being 2 mm long, and ridge width being 40 μm wide. © 2016 SPIE.


Zhou Y.,Tsinghua University | Zhou Y.,Guangdong Provincial Key Laboratory of Optomechatronics | Pan G.,Tsinghua University | Pan G.,Guangdong Provincial Key Laboratory of Optomechatronics | And 8 more authors.
Journal of Materials Science: Materials in Electronics | Year: 2015

The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studied through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. XPS results indicate that alumina silicate (Al2Si2O7·2H2O) is generated on the polished sapphire surface by SiO2 slurry, otherwise alumina hydrate (AlO(OH)) on the polished surface by H2O solution. Meanwhile, ultra-smooth polished surface with extremely low Ra of below 0.1 nm and atomic step structure morphology via AFM is realized using SiO2 slurry. Through investigating the variations of the surface characteristics polished by different ingredients via the morphology and force curve measurements, it’s reveals that the product-aluminum silicate with stronger adhesion and lower hardness is more readily to generate and be removed than the product-alumina hydrate induced by H2O. Thus, except for atomic scale mechanical abrading, the abrasive SiO2 nanoparticle is used for anticipating in the chemical reaction, resulting in superior surface finish of sapphire wafer with high efficiency. © 2015 Springer Science+Business Media New York


Chen G.,Tsinghua University | Chen G.,Guangdong Provincial Key Laboratory of Optomechatronics | Luo G.,Tsinghua University | Luo G.,Guangdong Provincial Key Laboratory of Optomechatronics | And 5 more authors.
Micro and Nano Letters | Year: 2016

Colloidal silica with different dispersion states during silicon chemical mechanical polishing (CMP) are investigated in detail. As the dispersion of colloidal silica is improved, the roughness (Ra) decreases gradually during polishing. The silicon surface has a minimum Ra of 0.118 nm when the polydispersity index of particles is 0.078. Comparing with surface polished by colloidal silica in poor dispersion, the surface quality has great improvement. The important role of dispersant is presented by the results of investigations. The research results indicate that dispersant makes aggregate micelles dispersed into many smaller uniform colloidal silica particles. The uniformly dispersed colloidal silica forms a thin film between the surfaces of silicon and polishing pad during CMP, which is beneficial for the stability of friction, and therefore greatly decreases roughness of silicon surface after polishing. © The Institution of Engineering and Technology 2016.

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