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Teng R.,General Research Institute for Nonferrous Metals, China | Teng R.,Grinm Semiconductor Materials Co. | Dai X.-L.,Grinm Semiconductor Materials Co. | Xu W.-T.,General Research Institute for Nonferrous Metals, China | And 4 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2012

Based on analysis of the rate of crystallization, the shape of melt/crystal interface, thermal stress in crystal, oxygen content in melt, we give an optimized scheme in heatshield including the position and the materials of the heatshield. This simulation not only depended on the global thermal environment of the crystal and the melt, but also depended on the turbulent melt convection. Research on thermal gradient, von Mises stress distribution, rate of crystallization and oxygen content revealed that the optimized heat-shield can reduce the thermal radiation of crystal by the heater, increase the rate of crystallization, flat the melt/crystal interface, reduce the Von Mises Stress, increase the flow rate of argon and decrease the oxygen content.


Xu W.,General Research Institute for Nonferrous Metals, China | Tu H.,General Research Institute for Nonferrous Metals, China | Chang Q.,GRINM Semiconductor Materials Co. | Xiao Q.,GRINM Semiconductor Materials Co.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

In this work, two kinds of thermal annealing methods were used to process the silicon wafer by Ge ion bombardment in two steps, dose of 7×1016/cm2 with 150KeV and dose of 2.72×1016/cm 2 with 50KeV respectively. In order to control the defects density and Ge distribution in SiGe layer, furnace annealing (FA) and rapid thermal annealing (RTA) schedules were used. It has been found that the FA after ion implantation could produce a high density of SiGe nanoclusters more than RTA. The results show that the SiGe nanostructure is matched with the Si matrix. ©2010 IEEE.


Xu W.,General Research Institute for Nonferrous Metals, China | Xu W.,GRINM Semiconductor Materials Co. | Tu H.,General Research Institute for Nonferrous Metals, China | Liu D.,General Research Institute for Nonferrous Metals, China | And 2 more authors.
Materials Letters | Year: 2012

SiGe nanoparticles with uniform diameter of about 30 nm in the top silicon of silicon on insulator (SOI) were synthesized by Ge ion implantation combined with subsequent annealing process. The density of those nanoparticles is 6 × 10 7/cm 2. These nanoparticles are formed by agglomeration of the recoil atoms and the migrated adatoms. The method presented in this study will allow efficient fabrication of uniform SiGe nanoparticles into SOI. © 2011 Elsevier B.V. All rights reserved.


Chang L.,Grinm Semiconductor Materials Co. | Zhou Q.,Grinm Semiconductor Materials Co. | Dai X.,Grinm Semiconductor Materials Co. | Lu J.,Grinm Semiconductor Materials Co. | Lu L.,Grinm Semiconductor Materials Co.
Xiyou Jinshu/Chinese Journal of Rare Metals | Year: 2011

Finite element analysis software femag-CZ was used for the simulation of the effect of CUSP magnetic field on the oxygen concentration in CZ-Si crystal growth. Keeping the CUSP radial component in the intersection of CUSP and the crucible melt interface constant, the law of oxygen concentration distribution along melt/crystal interface was studied. With the increase of the distance and radius of CUSP current coils, oxygen concentration in the m-c interface decreased gradually. Keeping the CUSP radial component in the intersection of CUSP and the crucible melt interface constant, CUSP magnetic field current coils distance and radius was adjusted. With the increase of coils distance and radius, the radial magnetic field strength in melt increased gradually, causing the axial melt convection velocity decreased. The melt containing more oxygen content from the bottom of crucible decreased, so the oxygen concentration in m-c interface decreased. With the increase of the distance and radius of coils, the applied current and then energy consumption also increased, compared with the increase of the electric coils distance, the increase of coils radius needed a larger current. Compared the numerical analysis with experiment, the two results gave the same variation tendency.


Cao J.,Zhejiang University | Gao Y.,GRINM Semiconductor Materials Co. | Chen Y.,Zhejiang University | Zhang G.,GRINM Semiconductor Materials Co. | Qiu M.,Zhejiang University
Rare Metals | Year: 2011

Computer simulation was used for optimizing a hot zone for Czochralski (CZ) silicon crystal growth. The heater structure and heat shield material were investigated. With this optimized hot zone, the temperature gradient near the crystal/melt interface increased and the CZ crystal could be grown at a faster rate. It is a great contribution for savingpower consumption. © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2011.


Teng R.,General Research Institute for Nonferrous Metals, China | Teng R.,Grinm Semiconductor Materials Co. | Dai X.-L.,Grinm Semiconductor Materials Co. | Xiao Q.-H.,Grinm Semiconductor Materials Co. | And 3 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2013

Numerical simulation is an effective tool for improving the large diameter single silicon crystal quality and reducing the preparation cost. The deflection of melt/crystal interface in Czochralski (Cz) method is a key issue for crystal quality. Owing to the high-temperature environment and in-situ observation are quite difficult, the finite element analysis was applied to research the interface shape and melt flow during the crystal growth. Using the thermal field and control parameters in this paper, we concluded that the maximum deflection of interface shape and Von Mises stress increases as the crystal length increasing and that crystal/melt interface shape and melt flow are sensitive to the pulling rate and the rotation rate of crystal and crucible. Interface with low deflection can be achieved for low pulling rate or for certain combination of crystal and crucible rotation rates.


Xu W.-T.,General Research Institute for Nonferrous Metals, China | Xu W.-T.,GRINM Semiconductor Materials Co. | Tu H.-L.,General Research Institute for Nonferrous Metals, China | Liu D.-L.,General Research Institute for Nonferrous Metals, China | And 3 more authors.
Journal of Nanoparticle Research | Year: 2012

We have fabricated SiGe quantum dots (QDs) by means of a two-step Si ion implantation followed by thermal rapid thermal annealing (RTA) method. SiGe QDs with the 4-6 nm diameter are formed uniformly in the near-surface region of Ge substrate. TheRTA processes are performed at 800 and 900 °C for 15 s, respectively. Both experimental and theoretical analysis indicates that the higher temperature (900 °C) RTA can enhance the growth of SiGe QDs. Two photoluminescence peaks are observed near 572 and 581 nm at room temperature. The mechanism of the luminescence from SiGe QDs is discussed. © Springer Science+Business Media B.V. 2012.


Xu W.,General Research Institute for Nonferrous Metals, China | Tu H.,General Research Institute for Nonferrous Metals, China | Xiao Q.,GRINM Semiconductor Materials Co. | Chang Q.,GRINM Semiconductor Materials Co. | And 2 more authors.
Applied Surface Science | Year: 2011

The Si1-xGex thin layer is fabricated by two-step Ge ion implantation into (0 0 1) silicon. The embedded SiGe nanoclusters are produced in the Si1-xGex layer upon further annealing. The number and size of the nanoclusters changed due to the Ge diffusion during annealing. Micro defects around the nanoclusters are illustrated. It is revealed that the change of Si-Si phonon mode is causing by the nanoclusters and micro defects. © 2011 Elsevier B.V. All rights reserved.


Xu W.-T.,General Research Institute for Nonferrous Metals, China | Xu W.-T.,GRINM Semiconductor Materials Co. | Tu H.-L.,General Research Institute for Nonferrous Metals, China | Liu D.-L.,GRINM Semiconductor Materials Co. | And 3 more authors.
Journal of Nanoparticle Research | Year: 2011

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5-7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail. © 2011 Springer Science+Business Media B.V.


Xu W.,General Research Institute for Nonferrous Metals, China | Xu W.,GRINM Semiconductor Materials Co. | Tu H.,General Research Institute for Nonferrous Metals, China | Chang Q.,GRINM Semiconductor Materials Co. | Xiao Q.,GRINM Semiconductor Materials Co.
Xiyou Jinshu/Chinese Journal of Rare Metals | Year: 2010

Based on the development of black silicon, the present preparation techniques of black silicon were reviewed, including reactive ion etching method, femtosecond laser pulses method, electrochemical etching method and metal assisted etching method. The application and the development of black silicon showed that the special structure of the black silicon could greatly reduce the silicon surface reflection and effectively improve the conversion efficiency of silicon solar cells. Black silicon could generate terahertz emission and could be used for optical detectors. The black silicon prepared by femtosecond laser pulses method exhibited the strong photosensitivity, while the electrochemical etching method showed the valuable perspective with low cost. Finally, the developing tendency of black silicon in China was discussed.

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