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Xu W.,General Research Institute for Nonferrous Metals, China | Tu H.,General Research Institute for Nonferrous Metals, China | Chang Q.,GRINM Semiconductor Materials Co. | Xiao Q.,GRINM Semiconductor Materials Co.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

In this work, two kinds of thermal annealing methods were used to process the silicon wafer by Ge ion bombardment in two steps, dose of 7×1016/cm2 with 150KeV and dose of 2.72×1016/cm 2 with 50KeV respectively. In order to control the defects density and Ge distribution in SiGe layer, furnace annealing (FA) and rapid thermal annealing (RTA) schedules were used. It has been found that the FA after ion implantation could produce a high density of SiGe nanoclusters more than RTA. The results show that the SiGe nanostructure is matched with the Si matrix. ©2010 IEEE. Source


Cao J.,Zhejiang University | Gao Y.,GRINM Semiconductor Materials Co. | Chen Y.,Zhejiang University | Zhang G.,GRINM Semiconductor Materials Co. | Qiu M.,Zhejiang University
Rare Metals | Year: 2011

Computer simulation was used for optimizing a hot zone for Czochralski (CZ) silicon crystal growth. The heater structure and heat shield material were investigated. With this optimized hot zone, the temperature gradient near the crystal/melt interface increased and the CZ crystal could be grown at a faster rate. It is a great contribution for savingpower consumption. © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2011. Source


Xu W.,General Research Institute for Nonferrous Metals, China | Tu H.,General Research Institute for Nonferrous Metals, China | Xiao Q.,GRINM Semiconductor Materials Co. | Chang Q.,GRINM Semiconductor Materials Co. | And 2 more authors.
Applied Surface Science | Year: 2011

The Si1-xGex thin layer is fabricated by two-step Ge ion implantation into (0 0 1) silicon. The embedded SiGe nanoclusters are produced in the Si1-xGex layer upon further annealing. The number and size of the nanoclusters changed due to the Ge diffusion during annealing. Micro defects around the nanoclusters are illustrated. It is revealed that the change of Si-Si phonon mode is causing by the nanoclusters and micro defects. © 2011 Elsevier B.V. All rights reserved. Source


Xu W.-T.,General Research Institute for Nonferrous Metals, China | Xu W.-T.,GRINM Semiconductor Materials Co. | Tu H.-L.,General Research Institute for Nonferrous Metals, China | Liu D.-L.,GRINM Semiconductor Materials Co. | And 3 more authors.
Journal of Nanoparticle Research | Year: 2011

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5-7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail. © 2011 Springer Science+Business Media B.V. Source


Xu W.,General Research Institute for Nonferrous Metals, China | Xu W.,GRINM Semiconductor Materials Co. | Tu H.,General Research Institute for Nonferrous Metals, China | Chang Q.,GRINM Semiconductor Materials Co. | Xiao Q.,GRINM Semiconductor Materials Co.
Xiyou Jinshu/Chinese Journal of Rare Metals | Year: 2010

Based on the development of black silicon, the present preparation techniques of black silicon were reviewed, including reactive ion etching method, femtosecond laser pulses method, electrochemical etching method and metal assisted etching method. The application and the development of black silicon showed that the special structure of the black silicon could greatly reduce the silicon surface reflection and effectively improve the conversion efficiency of silicon solar cells. Black silicon could generate terahertz emission and could be used for optical detectors. The black silicon prepared by femtosecond laser pulses method exhibited the strong photosensitivity, while the electrochemical etching method showed the valuable perspective with low cost. Finally, the developing tendency of black silicon in China was discussed. Source

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