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Port Glasgow, United Kingdom

Gerrer L.,University of Glasgow | Amoroso S.M.,University of Glasgow | Hussin R.,University of Glasgow | Hussin R.,University Malaysia Perlis | And 2 more authors.
Microelectronics Reliability | Year: 2014

In this paper we investigate the sensitivity of RTN noise spectra to statistical variability alone and in combination with variability in the traps properties, such as trap level and trap activation energy. By means of 3D statistical simulation, we demonstrate the latter to be mostly responsible for noise density spectra dispersion, due to its large impact on the RTN characteristic time. As a result FinFETs devices are shown to be slightly more sensitive to RTN than FDSOI devices. In comparison bulk MOSFETs are strongly disadvantaged by the statistical variability associated with high channel doping. © 2014 Elsevier Ltd. All rights reserved. Source


Sellier J.M.,Bulgarian Academy of Science | Amoroso S.M.,University of Glasgow | Nedjalkov M.,Vienna University of Technology | Selberherr S.,Vienna University of Technology | And 3 more authors.
Physica A: Statistical Mechanics and its Applications | Year: 2014

We present a numerical study of the evolution of a wave packet in a nanoscale MOSFET featuring an 'atomistic' channel doping. Our two-dimensional Monte Carlo Wigner simulation results are compared against classical Boltzmann simulation results. We show that the quantum effects due to the presence of a scattering center are manifestly non-local affecting the wave propagation much farther than the geometric limit of the center. In particular the part of the channel close to the oxide interface remains blocked for transport, in contrast to the behavior predicted by classical Boltzmann propagation. © 2013 Elsevier B.V. Source


Amoroso S.M.,University of Glasgow | Compagnoni C.M.,Polytechnic of Milan | Ghetti A.,Micron Technology Inc. | Gerrer L.,University of Glasgow | And 4 more authors.
IEEE Electron Device Letters | Year: 2013

This letter presents a numerical investigation of the statistical distribution of the random telegraph noise (RTN) amplitude in nanoscale MOS devices, focusing on the change of its main features when moving from the subthreshold to the on-state conduction regime. Results show that while the distribution can be well approximated by an exponential behavior in subthreshold, large deviations from this behavior appear when moving toward the on-state regime, despite a low probability exponential tail at high RTN amplitudes being preserved. The average value of the distribution is shown to keep an inverse proportionality to channel area, while the slope of the high-amplitude exponential tail changes its dependence on device width, length, and doping when moving from subthreshold to on-state. © 1980-2012 IEEE. Source


Markov S.,University of Glasgow | Amoroso S.M.,University of Glasgow | Gerrer L.,University of Glasgow | Adamu-Lema F.,University of Glasgow | And 3 more authors.
IEEE Electron Device Letters | Year: 2013

We report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for time-dependent variability in circuits. © 1980-2012 IEEE. Source


Franco J.,IMEC | Franco J.,Catholic University of Leuven | Kaczer B.,IMEC | Toledano-Luque M.,IMEC | And 8 more authors.
IEEE Electron Device Letters | Year: 2012

The measurement of the entire I D-V G characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary charge in a gate-oxide defect is demonstrated. The impact of a single trapped carrier on the device characteristics is compared with 3-D atomistic device simulations. The I D-V G behavior is identified to depend on the location of the oxide defect with respect to the critical spot of the current percolation path in the channel. © 2012 IEEE. Source

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