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Breitenfurt bei Wien, Austria

Illarionov Y.Y.,RAS Ioffe Physical - Technical Institute | Vexler M.I.,RAS Ioffe Physical - Technical Institute | Karner M.,Global TCAD Solutions GmbH | Tyaginov S.E.,RAS Ioffe Physical - Technical Institute | And 2 more authors.
Current Applied Physics | Year: 2015

We introduce a simulation technique suitable to model the tunneling leakage current in the metal(polySi)/CaF2/Si(111) MIS structures using TCAD simulators Minimos-NT and ViennaSHE. The simulations are performed using the real physical parameters of the CaF2/Si tunnel barrier. The results obtained for the case of near-equilibrium carrier transport are in a good agreement with experimental data and also with the simulation results yielded by our reference physical model. The obtained non-equilibrium hot-electron tunnel leakages in the hypothetical transistors with CaF2 as a gate dielectric are comparable to those in the structures with silicon dioxide. Being an important step forward for the device application of calcium fluorite, this work opens the possibility of simulating the characteristics of different silicon-based systems with crystalline insulators. © 2014 Elsevier B.V. All rights reserved. Source


Stanojevic Z.,Vienna University of Technology | Karner M.,Global TCAD Solutions GmbH | Kosina H.,Vienna University of Technology
Technical Digest - International Electron Devices Meeting, IEDM | Year: 2013

We conduct a comprehensive simulation study of non-planar n-type channels based on consistent, physical models containing measurable quantities rather than fit-parameters. This contrasts empirical thin-body models used in classical/quantum-corrected TCAD. The method involves the self-consistent solution of the two-dimensional Schrödinger-Poisson system, combined with linearized Boltzmann transport in the third dimension. We advance the art of simulation by (i) introducing quantum simulation on unstructured meshes for arbitrary geometries, (ii) providing an efficient framework for rapid evaluation of device designs, and (iii) contributing a surface roughness scattering model for arbitrarily shaped surfaces. Consistent modeling allows us to make reliable assertions with respect to device performance. © 2013 IEEE. Source


Baumgartner O.,Vienna University of Technology | Stanojevic Z.,Vienna University of Technology | Schnass K.,Global TCAD Solutions GmbH | Karner M.,Global TCAD Solutions GmbH | Kosina H.,Vienna University of Technology
Journal of Computational Electronics | Year: 2013

The Vienna Schrödinger-Poisson (VSP) simulation framework for quantum-electronic engineering applications is presented. It is an extensive software tool that includes models for band structure calculation, self-consistent carrier concentrations including strain, mobility, and transport in transistors and heterostructure devices. The basic physical models are described. Through flexible combination of basic models sophisticated simulation setups for particular problems are feasible. The numerical tools, methods and libraries are presented. A layered software design allows VSP's existing components such as models and solvers to be combined in a multitude of ways, and new components to be added easily. The design principles of the software are explained. Software abstraction is divided into the data, modeling and algebraic level resulting in a flexible physical modeling tool. The simulator's capabilities are demonstrated with real-world simulation examples of tri-gate and nanoscale planar transistors, quantum dots, resonant tunneling diodes, and quantum cascade detectors. © 2013 Springer Science+Business Media New York. Source


Demel H.,Global TCAD Solutions GmbH | Stanojevic Z.,Global TCAD Solutions GmbH | Karner M.,Global TCAD Solutions GmbH | Rzepa G.,Vienna University of Technology | Grasser T.,Vienna University of Technology
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | Year: 2015

In this work, the distribution, execution and performance of TCAD simulations on grid and cloud systems are investigated. A module for distributed computing which can uniformly interface both grid and cloud computing systems has been implemented within GTS Framework. Automated allocation of resources for user jobs on a combined platform has been achieved. Traditional grid-computing systems are compared with cloud-based systems. Strategies for cost-effective allocation of cloud-resources are presented. The performance of a typical TCAD application run on a grid, in the cloud, and a hybrid system combining both are assessed. © 2015 IEEE. Source


Baumgartner O.,Vienna University of Technology | Filipovic L.,Vienna University of Technology | Kosina H.,Vienna University of Technology | Karner M.,Global TCAD Solutions GmbH | And 2 more authors.
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | Year: 2015

In this work, a comprehensive investigation of the effect of source/drain tunneling in ultra-scaled transistors is presented. A novel approach to efficiently and accurately incorporate the quantum-mechanical effects of source/drain (S/D) tunneling in semi-classical device simulators has been developed. The ballistic quantum transport model has been implemented as part of the Vienna-Schrödinger-Poisson simulation and modeling framework. The transport formalism is based on the quantum transmitting boundary method and has been extended to provide recombination and generation rates of carriers due to the direct tunneling current across the source/drain barrier. The model has been used to investigate the effect of direct S/D tunneling on device performance in ultra-scaled double-gate and nanowire transistors. The variations in transfer and output characteristics due to the tunneling effect have been calculated for different gate lengths and channel widths. The influence on the drain induced barrier lowering is shown. © 2015 IEEE. Source

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