Irvine, CA, United States

Time filter

Source Type

Xu F.,University of Tennessee at Knoxville | Han T.J.,Global Power Electronics, INC. | Jiang D.,UTRC - United Technologies Research Center | Tolbert L.M.,University of Tennessee at Knoxville | And 5 more authors.
IEEE Transactions on Power Electronics | Year: 2013

In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is designed and developed. With 1200-V, 100-A module rating, each switching element is composed of four paralleled SiC junction gate field-effect transistors (JFETs) with two antiparallel SiC Schottky barrier diodes. The stability of the module assembly processes is confirmed with 1000cycles of 40°C to 200°C thermal shock tests with 1.3°C/s temperature change. The static characteristics of the module are evaluated and the results show 55mΩ on-state resistance of the phase leg at 200°C junction temperature. For switching performances, the experiments demonstrate that while utilizing a 650-V voltage and 60-A current, the module switching loss decreases as the junction temperature increases up to 150°C. The test setup over a large temperature range is also described. Meanwhile, the shoot-through influenced by the SiC JFET internal capacitance as well as package parasitic inductances are discussed. Additionally, a liquid cooled three-phase inverter with 22.9cm × 22.4cm × 7.1cm volume and 3.53-kg weight, based on this power module, is designed and developed for electric vehicle and hybrid electric vehicle applications. A conversion efficiency of 98.5 is achieved at 10kHz switching frequency at 5kW output power. The inverter is evaluated with coolant temperature up to 95°C successfully. © 2012 IEEE.


Zhang H.,Tuskegee University | Tolbert L.M.,University of Tennessee at Knoxville | Tolbert L.M.,Oak Ridge National Laboratory | Han J.H.,Global Power Electronics, INC. | And 2 more authors.
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | Year: 2010

Power electronics play an important role in electricity utilization from generation to end customers. Thus, highefficiency power electronics help to save energy and conserve energy resources. Research on silicon carbide (SiC) power electronics has shown their better efficiency compared to Si power electronics due to the significant reduction in both conduction and switching losses. Combined with their hightemperature capability, SiC power electronics are more reliable and compact. This paper focuses on the development of such a high efficiency, high temperature inverter based on SiC JFET and diode modules. It involves the work on high temperature packaging (>200 °C), inverter design and prototype development, device characterization, and inverter testing. A SiC inverter prototype with a power rating of 18 kW is developed and demonstrated. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.2% is achieved by the initial prototype without optimization, which is higher than most Si inverters. ©2010 IEEE.


Xu F.,University of Tennessee at Knoxville | Jiang D.,University of Tennessee at Knoxville | Wang J.,University of Tennessee at Knoxville | Wang F.,University of Tennessee at Knoxville | And 3 more authors.
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings | Year: 2011

This paper presents a SiC JFET-based, 200°C, 50 kW three-phase inverter module and evaluates its electrical performance. With 1200 V, 100 A rating of the module, each switching element is composed of four paralleled SiC JFETs with two anti-parallel SiC Shottky Barrier Diodes (SBDs). The substrate layout inside the module is designed to reduce package parasitics. Then, experimental static characteristics of the module are obtained over a wide range of temperature, and low on-state resistance is shown up to 200°C. The dynamic performance of this module is evaluated by double pulse test up to 150°C, under 650 V dc bus voltage and 60 A drain current, with different turn-on and turn-off gate resistances. The current unbalance phenomenon and phase-leg shoot-through problem are analyzed too. The results by simulation and experiments show that the causes of shoot-through are JFET inside parameters, package parasitics, and high temperature. The switching losses of this module at different temperatures are shown at the end. © 2011 IEEE.


Jiang D.,University of Tennessee at Knoxville | Xu F.,University of Tennessee at Knoxville | Wang F.,University of Tennessee at Knoxville | Tolbert L.M.,University of Tennessee at Knoxville | And 2 more authors.
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings | Year: 2011

This paper studies the performance of a newly designed 1200V/60A three-phase SiC power module based on parallel SiC JFETs and diodes. The conduction and the switching performance are tested from room temperature to 150°C. The switching speed of the module increases when temperature rises. In the switching performance test, the gate driver speed could bring false peak in turn-off waveform. The experimental results show that the false peak is cause by Differential-mode (DM) noises but not Common-mode (CM) noises. Finally the losses and efficiency of this power module are evaluated. © 2011 IEEE.


Chinthavali M.,Oak Ridge National Laboratory | Tolbert L.M.,Oak Ridge National Laboratory | Zhang H.,Tuskegee University | Han J.H.,Global Power Electronics, INC. | And 2 more authors.
2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010 | Year: 2010

With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. Research on SiC power electronics has shown their higher efficiency compared to Si power electronics due to significantly lower conduction and switching losses. This paper focuses on the development of a high power module based on SiC JFETs and Schottky diodes. Characterization of a single device, a module developed using the same device, and finally an inverter built using the modules is presented. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.2% was achieved by the initial prototype. © 2010 IEEE.


Han T.J.,Global Power Electronics, INC. | Nagashima J.,Global Power Electronics, INC. | Kim S.J.,Global Power Electronics, INC. | Kulkarni S.,University of Idaho | Barlow F.,University of Idaho
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings | Year: 2011

A fully integrated Silicon Carbide (SiC) JFET/SBD based six-pack power module is designed and developed. The stability of the module assembly processes are confirmed with thermal shock test of -40 to +200°C temperature cycling. A three phase inverter with the SiC power module is designed and developed for the EV/HEV applications. The liquid cooled inverter is 22.9 x 22.4 x 7.1 cubic centimeters in volume (∼8.35kW/L) and 3.53 kilograms in weight (∼8.5kW/kg). A conversion efficiency of 98.5% is achieved at 10 kHz switching frequency and 10 kW. The inverter is evaluated with coolant temperature up to 95°C successfully. © 2011 IEEE.


Ouwerkerk D.,Global Power Electronics, INC. | Han T.,Global Power Electronics, INC. | Preston J.,Global Power Electronics, INC.
2012 IEEE Vehicle Power and Propulsion Conference, VPPC 2012 | Year: 2012

Silicon Carbide (SiC) is a developing technology that offers high temperature capability and improved efficiency to a variety of power conversion system applications. At this time SiC Schottky Barrier Diodes (SBDs) are becoming available for commercial use. With time higher current and voltage capabilities will be realized along with higher yields, lower costs, and a wide selection of devices available (including SiC switches). This paper specifically compares efficiency improvements that are currently possible with Silicon (Si) IGBT switches and fast Si diodes versus SiC diodes in a non-isolated 6.6kW On-Vehicle Charger. This compares a full Si Boost Module with a Si IGBT / SiC diode Boost Module. Test data presented is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4% with the SiC SBD based hybrid Boost Module. The 1.4% conversion efficiency gain is realizable using the hybrid Boost Module. © 2012 IEEE.


Han T.J.,Global Power Electronics, INC. | Preston J.,Global Power Electronics, INC. | Ouwerkerk D.,Global Power Electronics, INC.
Journal of Power Electronics | Year: 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.


Grant
Agency: Department of Defense | Branch: Army | Program: SBIR | Phase: Phase I | Award Amount: 69.98K | Year: 2010

This project will extend the performance and capabilities of an existing and proven Silicon-on-Insulator (SOI) high temperature gate drive integrated circuit developed by the University of Tennessee (UT) to meet the Army’s requirements for a high performance SiC Gate Drive. GPE and UT will develop circuits that add high temperature galvanic isolation, high current SiC buffer drivers, and inherently safe operation with normally-on devices. Electrical and Thermal analysis will be performed at the prescribed operating temperatures and frequencies for all three types of SiC power switches. The deliverable for Phase I will be a project report with simulation results and recommendations for Phase II. The objective for the Phase I Option is to prepare for the Prototype fabrication in Phase II. GPE will conduct a conceptual packaging study to determine the best electrical layout for high frequency and the best thermal layout for reduction of device temperatures and stress reduction. Currently there are no commercially available low voltage SiC devices for a small footprint buffer circuit so another task will be to optimize the SiC buffer for low voltage operation.


Loading Global Power Electronics, INC. collaborators
Loading Global Power Electronics, INC. collaborators