Irvine, CA, United States

Global Power Electronics, INC.

www.GPE-Energy.COM
Irvine, CA, United States

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Han T.J.,Global Power Electronics, INC. | Nagashima J.,Global Power Electronics, INC. | Kim S.J.,Global Power Electronics, INC. | Kulkarni S.,University of Idaho | Barlow F.,University of Idaho
8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia | Year: 2011

Recent progress on Silicon Carbide (SiC) power devices has shown their better power conversion efficiency compared to Silicon power devices due to the significant reduction in both conduction and switching losses. Combined with their high operating junction temperature capability, six-pack SiC power modules have been developed for high reliable and compact power systems. This paper focuses on the development of a high efficiency and high temperature inverter based on fully integrated SiC power modules. The main topic includes the SiC power module design targeting on high temperature operation (T j200 °C), full three phase inverter design and prototype development, and the inverter evaluation. A liquid cooled SiC inverter prototype with a peak power rating of 50 kW has been developed and demonstrated. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.5% is achieved by the initial prototype, which is higher than most Si inverters. © 2011 IEEE.


Xu F.,University of Tennessee at Knoxville | Jiang D.,University of Tennessee at Knoxville | Wang J.,University of Tennessee at Knoxville | Wang F.,University of Tennessee at Knoxville | And 4 more authors.
8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia | Year: 2011

Research on silicon carbide (SiC) power electronics has shown their advantages in high temperature and high efficiency applications. This paper presents a SiC JFET based, 200 °C, 50 kW three-phase inverter module and evaluates its electrical performance. With 1200 V, 100 A rating of the module, each switching element is composed of four paralleled SiC JFETs (1200 V/25 A each) and two anti-parallel SiC Shottky Barrier Diodes (SBDs). The substrate layout inside the module is designed to reduce package parasitics. Then, experimental static characteristics of the module are obtained over a wide range of temperature, and low on-state resistance is shown up to 200 °C. A gate driver, with different turn-on, turn-off gate resistances and RCD network, is designed to optimize the switching performances. The module is verified to have low power loss, fast switching characteristics at 650 V dc bus voltage, 60 A drain current, in both simulation and experiments. Finally, switching time and losses, obtained from simulation and experiment, are compared. © 2011 IEEE.


Xu F.,University of Tennessee at Knoxville | Han T.J.,Global Power Electronics, INC. | Jiang D.,UTRC - United Technologies Research Center | Tolbert L.M.,University of Tennessee at Knoxville | And 5 more authors.
IEEE Transactions on Power Electronics | Year: 2013

In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is designed and developed. With 1200-V, 100-A module rating, each switching element is composed of four paralleled SiC junction gate field-effect transistors (JFETs) with two antiparallel SiC Schottky barrier diodes. The stability of the module assembly processes is confirmed with 1000cycles of 40°C to 200°C thermal shock tests with 1.3°C/s temperature change. The static characteristics of the module are evaluated and the results show 55mΩ on-state resistance of the phase leg at 200°C junction temperature. For switching performances, the experiments demonstrate that while utilizing a 650-V voltage and 60-A current, the module switching loss decreases as the junction temperature increases up to 150°C. The test setup over a large temperature range is also described. Meanwhile, the shoot-through influenced by the SiC JFET internal capacitance as well as package parasitic inductances are discussed. Additionally, a liquid cooled three-phase inverter with 22.9cm × 22.4cm × 7.1cm volume and 3.53-kg weight, based on this power module, is designed and developed for electric vehicle and hybrid electric vehicle applications. A conversion efficiency of 98.5 is achieved at 10kHz switching frequency at 5kW output power. The inverter is evaluated with coolant temperature up to 95°C successfully. © 2012 IEEE.


Zhang H.,Tuskegee University | Tolbert L.M.,University of Tennessee at Knoxville | Tolbert L.M.,Oak Ridge National Laboratory | Han J.H.,Global Power Electronics, INC. | And 2 more authors.
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | Year: 2010

Power electronics play an important role in electricity utilization from generation to end customers. Thus, highefficiency power electronics help to save energy and conserve energy resources. Research on silicon carbide (SiC) power electronics has shown their better efficiency compared to Si power electronics due to the significant reduction in both conduction and switching losses. Combined with their hightemperature capability, SiC power electronics are more reliable and compact. This paper focuses on the development of such a high efficiency, high temperature inverter based on SiC JFET and diode modules. It involves the work on high temperature packaging (>200 °C), inverter design and prototype development, device characterization, and inverter testing. A SiC inverter prototype with a power rating of 18 kW is developed and demonstrated. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.2% is achieved by the initial prototype without optimization, which is higher than most Si inverters. ©2010 IEEE.


Xu F.,University of Tennessee at Knoxville | Jiang D.,University of Tennessee at Knoxville | Wang J.,University of Tennessee at Knoxville | Wang F.,University of Tennessee at Knoxville | And 3 more authors.
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings | Year: 2011

This paper presents a SiC JFET-based, 200°C, 50 kW three-phase inverter module and evaluates its electrical performance. With 1200 V, 100 A rating of the module, each switching element is composed of four paralleled SiC JFETs with two anti-parallel SiC Shottky Barrier Diodes (SBDs). The substrate layout inside the module is designed to reduce package parasitics. Then, experimental static characteristics of the module are obtained over a wide range of temperature, and low on-state resistance is shown up to 200°C. The dynamic performance of this module is evaluated by double pulse test up to 150°C, under 650 V dc bus voltage and 60 A drain current, with different turn-on and turn-off gate resistances. The current unbalance phenomenon and phase-leg shoot-through problem are analyzed too. The results by simulation and experiments show that the causes of shoot-through are JFET inside parameters, package parasitics, and high temperature. The switching losses of this module at different temperatures are shown at the end. © 2011 IEEE.


Han T.J.,Global Power Electronics, INC. | Nagashima J.,Global Power Electronics, INC. | Kim S.J.,Global Power Electronics, INC. | Kulkarni S.,University of Idaho | Barlow F.,University of Idaho
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings | Year: 2011

A fully integrated Silicon Carbide (SiC) JFET/SBD based six-pack power module is designed and developed. The stability of the module assembly processes are confirmed with thermal shock test of -40 to +200°C temperature cycling. A three phase inverter with the SiC power module is designed and developed for the EV/HEV applications. The liquid cooled inverter is 22.9 x 22.4 x 7.1 cubic centimeters in volume (∼8.35kW/L) and 3.53 kilograms in weight (∼8.5kW/kg). A conversion efficiency of 98.5% is achieved at 10 kHz switching frequency and 10 kW. The inverter is evaluated with coolant temperature up to 95°C successfully. © 2011 IEEE.


Ouwerkerk D.,Global Power Electronics, INC. | Han T.,Global Power Electronics, INC. | Preston J.,Global Power Electronics, INC.
2012 IEEE Vehicle Power and Propulsion Conference, VPPC 2012 | Year: 2012

Silicon Carbide (SiC) is a developing technology that offers high temperature capability and improved efficiency to a variety of power conversion system applications. At this time SiC Schottky Barrier Diodes (SBDs) are becoming available for commercial use. With time higher current and voltage capabilities will be realized along with higher yields, lower costs, and a wide selection of devices available (including SiC switches). This paper specifically compares efficiency improvements that are currently possible with Silicon (Si) IGBT switches and fast Si diodes versus SiC diodes in a non-isolated 6.6kW On-Vehicle Charger. This compares a full Si Boost Module with a Si IGBT / SiC diode Boost Module. Test data presented is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4% with the SiC SBD based hybrid Boost Module. The 1.4% conversion efficiency gain is realizable using the hybrid Boost Module. © 2012 IEEE.


Han T.J.,Global Power Electronics, INC. | Preston J.,Global Power Electronics, INC. | Ouwerkerk D.,Global Power Electronics, INC.
Journal of Power Electronics | Year: 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.


Grant
Agency: Department of Defense | Branch: Army | Program: SBIR | Phase: Phase I | Award Amount: 69.98K | Year: 2010

This project will extend the performance and capabilities of an existing and proven Silicon-on-Insulator (SOI) high temperature gate drive integrated circuit developed by the University of Tennessee (UT) to meet the Army’s requirements for a high performance SiC Gate Drive. GPE and UT will develop circuits that add high temperature galvanic isolation, high current SiC buffer drivers, and inherently safe operation with normally-on devices. Electrical and Thermal analysis will be performed at the prescribed operating temperatures and frequencies for all three types of SiC power switches. The deliverable for Phase I will be a project report with simulation results and recommendations for Phase II. The objective for the Phase I Option is to prepare for the Prototype fabrication in Phase II. GPE will conduct a conceptual packaging study to determine the best electrical layout for high frequency and the best thermal layout for reduction of device temperatures and stress reduction. Currently there are no commercially available low voltage SiC devices for a small footprint buffer circuit so another task will be to optimize the SiC buffer for low voltage operation.


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