Global Foundries Inc. | Date: 2015-08-24
A patterning scheme to minimize dry/wet strip induced device degradation and resultant devices are provided. The method includes removing a workfunction material over a first device area of a structure, while protecting the workfunction material over a second device area of the structure with a first masking material. The method further includes applying a second masking material over the first device area and the first masking material. The method further includes removing the first masking material and the second masking material until the workfunction material is exposed over the second device area.
Global Foundries Inc. | Date: 2015-11-30
Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least one gate region around the multiple sides of the at least one channel region and forming the at least one gate region around the multiple sides of the at least one drain region.
Ibm and Global Foundries Inc. | Date: 2015-09-10
Techniques for preventing leakage of contact material into air-gap spacers during contact formation. For example, a method comprises forming a contact trench on a semiconductor structure over an air-gap spacer and depositing a liner in the contact trench. The liner deposition material fills a portion of the air-gap spacer pinching off the contact trench to the air-gap spacer.
Global Foundries Inc. | Date: 2015-10-21
Various embodiments include approaches for analyzing a set of travel pathways for a priority vehicle. In some cases, an approach includes: obtaining data indicating a location of the priority vehicle and a location of a destination for the priority vehicle; ranking each of a set of paths between the location of the priority vehicle and the location of the destination based upon a travel time for the priority vehicle along the set of paths; and sending instructions to vehicles on a highest-ranked path in the set of paths to initiate providing a right-of-way to the priority vehicle, wherein vehicles closer to the destination along the highest-ranked path are instructed to change a corresponding position prior to vehicles farther from the destination along the highest-ranked path.
Global Foundries Inc. | Date: 2015-03-10
An optical package includes a laser die a photonics die. The laser die generates light and includes a laser facet that emits light. The photonics die modulates light emitted from the facet and includes an internal waveguide optically connected with the facet and one or more standoff contacts, flush contacts, or reduced contacts. The optical package may also include an external waveguide optically connected to the photonics die. The external waveguide may be optically connected to the photonics die prior to electrically connecting the photonics die with an interposer. The standoff contacts extend from a device side of the photonics die beyond the laser die, the flush contacts extend from the device side of the photonics die to be coplanar with the laser die, and the reduced contacts extend from the device side of the photonics short of the laser die.
Global Foundries Inc. | Date: 2015-10-28
A process for fabrication of semiconductor devices, particularly FinFETs, having a low contact horizontal resistance and a resulting device are provided. Embodiments include: providing a substrate having source and drain regions separated by a gate region; forming a gate electrode having a first length on the gate region; forming an epitaxy layer on the source and drain regions; forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and forming an oxide layer on top and side surfaces of the contact layer for at least the first length.
Global Foundries Inc. | Date: 2015-06-02
Aspects of the present disclosure include a computer-implemented method for designing a temperature-compliant integrated circuit (IC). The method can include: calculating a thermal resistance of an IC layout, the IC layout having an area-dependent thermal conductance, a fin thermal conductance, and a gate thermal conductance each based on a device geometry of a plurality of transistors in the IC layout; calculating a self-heating temperature as directly proportional to the thermal resistance; comparing the self-heating temperature with a threshold temperature; in response to the self-heating temperature exceeding the threshold temperature, automatically modifying the device geometry of the IC layout to reduce at least one of the area term and the perimeter term, thereby reducing the self-heating temperature of the IC layout; and designing the temperature-compliant IC layout by repeating the calculating and automatically modifying steps until the self-heating temperature does not exceed the threshold temperature.
Ibm and Global Foundries Inc. | Date: 2016-01-11
A replacement metal gate process in which a high-k dielectric is applied. The high-k dielectric may be doped with lanthanum in an NMOS region or aluminum in a PMOS region. A dummy gate structure may be formed over the high-k dielectric and etched to form an opening over the NMOS region and an opening over the PMOS region. Thereafter, first work function metals are deposited in the NMOS opening and second work function metals are applied in the PMOS openings. A suitable gate electrode material may then fill the remainder of the NMOS and PMOS openings.
Global Foundries Inc. | Date: 2015-07-07
An integrated circuit product includes an NMOS transistor having a gate structure that includes an NMOS gate insulation layer, a first NMOS metal layer positioned on the NMOS gate insulation layer, an NMOS metal silicide material positioned above the first NMOS metal layer, and a layer of a second metal material positioned above and in contact with the NMOS gate insulation layer, the first NMOS metal layer, and the NMOS metal silicide layer. The PMOS transistor has a gate structure that includes a PMOS gate insulation layer, a first PMOS metal layer positioned on the PMOS gate insulation layer, a PMOS metal silicide material positioned above the first PMOS metal layer, and a layer of the second metal material positioned above and in contact with the PMOS gate insulation layer, the first PMOS metal layer, and the PMOS metal silicide layer.
Ibm and Global Foundries Inc. | Date: 2015-08-27
A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.