Global Foundries Inc. | Date: 2015-07-07
An integrated circuit product includes an NMOS transistor having a gate structure that includes an NMOS gate insulation layer, a first NMOS metal layer positioned on the NMOS gate insulation layer, an NMOS metal silicide material positioned above the first NMOS metal layer, and a layer of a second metal material positioned above and in contact with the NMOS gate insulation layer, the first NMOS metal layer, and the NMOS metal silicide layer. The PMOS transistor has a gate structure that includes a PMOS gate insulation layer, a first PMOS metal layer positioned on the PMOS gate insulation layer, a PMOS metal silicide material positioned above the first PMOS metal layer, and a layer of the second metal material positioned above and in contact with the PMOS gate insulation layer, the first PMOS metal layer, and the PMOS metal silicide layer.
Global Foundries Inc. | Date: 2014-05-27
Semiconductor device structures are provided. An exemplary semiconductor device structure includes a substrate of a semiconductor material and a gate structure overlying the substrate. The semiconductor substrate further includes a doped region formed in the substrate proximate the gate structure and a first dielectric material overlying the doped region. The semiconductor substrate also includes a conductive contact formed in the first dielectric material, the conductive contact being electrically connected to the doped region, and a dielectric cap overlying the conductive contact.
Global Foundries Inc. | Date: 2015-10-28
A process for fabrication of semiconductor devices, particularly FinFETs, having a low contact horizontal resistance and a resulting device are provided. Embodiments include: providing a substrate having source and drain regions separated by a gate region; forming a gate electrode having a first length on the gate region; forming an epitaxy layer on the source and drain regions; forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and forming an oxide layer on top and side surfaces of the contact layer for at least the first length.
Global Foundries Inc. | Date: 2014-04-11
A method of forming a group of probe pads or sets of probe pads and DUTs in a staggered pattern within a portion of a pad row and the resulting device are disclosed. Embodiments include forming a first group of probe pads or sets of probe pads and DUTs in a pad row on a wafer; and forming a second group of probe pads and DUTs in the pad row on the wafer, wherein the probe pads or sets of probe pads of the first group are staggered along the pad row, and each DUT of the first group is aligned with a probe pad perpendicular to the pad row.
Global Foundries Inc. | Date: 2015-08-12
Interlayer fabrication methods and interlayer structure are provided having reduced dielectric constants. The methods include, for example: providing a first uncured insulating layer with an evaporable material; and disposing a second uncured insulating layer having porogens above the first uncured insulating layer. The interlayer structure includes both the first and second insulating layers, and the methods further include curing the interlayer structure, leaving air gaps in the first insulating layer, and pores in the second insulating layer, where the air gaps are larger than the pores, and where the air gaps and pores reduce the dielectric constant of the interlayer structure.