Lund, Sweden
Lund, Sweden

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Patent
Glo Ab | Date: 2016-11-16

An integrated back light unit includes a light emitting device assembly which contains an optically transparent encapsulant portion which encapsulates at least one light emitting device, and a light guide unit optically coupled to the at least one light emitting device to receive light from the at least one light emitting device. An adhesive material portion can be provided to bond the light emitting device assembly and the light guide unit. Light-scattering particles can be provided in the optical path of the light from the at least one light emitting device to diffuse light and to homogenize the light introduced into the light guide unit. The light-scattering particles and the adhesive material portion can increase the coupling efficiency of the integrated back light unit.


A light bar includes a plurality of first color light emitting LEDs including a first subset of first color light emitting LEDs and a second subset of first color light emitting LEDs, a plurality of second color light emitting LEDs, where the second color is different from the first color, and a plurality of third color light emitting LEDs, where the third color is different from the first and the second colors. The second subset of first color light emitting LEDs are electrically connected in series with a larger electrical load than the first subset of first color light emitting LEDs. This light bar electrical configuration allows compensation and correction for locations on the light guide plate used in back light units where imperfect mixing of the 3 primary colors provided by the individual LED emitters on the light bar occurs.


Patent
Glo Ab | Date: 2016-11-16

An integrated back light unit includes a light emitting device assembly including a plurality of light emitting devices located in a reflective mixing chamber containing reflective walls, a phosphor material which is located remotely from the LEDs and converts the light from the light emitting devices into phosphor converted light, and a light guide unit optically coupled to the light emitting device assembly to receive light from the light emitting devices and the phosphor material. The combination of the light from the plurality of light emitting devices that passes through the phosphor material and the phosphor converted light can provide white light that can be scattered by the light guide unit to provide white backlight.


A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices comprising remaining portions of the device layer are laterally isolated from one another by the channels. The transfer substrate can be bonded to a target substrate through an adhesion layer. Surface portions of the devices can be removed from an interface region between the transfer substrate and the devices by irradiating a laser beam through the transfer substrate onto the devices. The laser irradiation decomposes the III-V compound semiconductor material. The channels provide escape paths for the gaseous products (such as nitrogen gas) that are generated by the laser irradiation. The transfer substrate is separated from a bonded assembly including the target substrate and remaining portions of the devices. The devices can include a III-V compound semiconductor material.


A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.


Patent
Glo Ab | Date: 2017-02-27

A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively, The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.


A core- shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.


Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.


A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.


A method for ablating a first area of a light emitting diode (LED) device which includes an array of nanowires on a support with a laser is provided. The laser ablation exposes a conductive layer of the support that is electrically connected to a first conductivity type semiconductor nanowire core in the nanowires, to form a first electrode for the LED device. In embodiments, the nanowires are aligned at least 20 degrees from the plane of the support. A light emitting diode (LED) structure includes a first electrode for contacting a first conductivity type nanowire core, and a second electrode for contacting a second conductivity type shell enclosing the nanowire core, where the first electrode and/or at least a portion of the second electrode are flat.

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