Lund, Sweden
Lund, Sweden

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Patent
Glo Ab | Date: 2016-11-16

An integrated back light unit includes a light emitting device assembly which contains an optically transparent encapsulant portion which encapsulates at least one light emitting device, and a light guide unit optically coupled to the at least one light emitting device to receive light from the at least one light emitting device. An adhesive material portion can be provided to bond the light emitting device assembly and the light guide unit. Light-scattering particles can be provided in the optical path of the light from the at least one light emitting device to diffuse light and to homogenize the light introduced into the light guide unit. The light-scattering particles and the adhesive material portion can increase the coupling efficiency of the integrated back light unit.


A light bar includes a plurality of first color light emitting LEDs including a first subset of first color light emitting LEDs and a second subset of first color light emitting LEDs, a plurality of second color light emitting LEDs, where the second color is different from the first color, and a plurality of third color light emitting LEDs, where the third color is different from the first and the second colors. The second subset of first color light emitting LEDs are electrically connected in series with a larger electrical load than the first subset of first color light emitting LEDs. This light bar electrical configuration allows compensation and correction for locations on the light guide plate used in back light units where imperfect mixing of the 3 primary colors provided by the individual LED emitters on the light bar occurs.


A method of dicing semiconductor devices from a substrate includes forming a Bragg reflector over a bottom side of the substrate, where the bottom side is opposite of a top side, generating a pattern of defects in the substrate with a laser beam from the bottom side of the substrate, and applying pressure to the substrate to dice the substrate along the pattern of defects. The Bragg reflector includes a first layer of dielectric material having a first index of refraction and a second dielectric material having a second index of refraction different from the first index of refraction.


Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.


A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.


A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90 when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance.


A method for ablating a first area of a light emitting diode (LED) device which includes an array of nanowires on a support with a laser is provided. The laser ablation exposes a conductive layer of the support that is electrically connected to a first conductivity type semiconductor nanowire core in the nanowires, to form a first electrode for the LED device. In embodiments, the nanowires are aligned at least 20 degrees from the plane of the support. A light emitting diode (LED) structure includes a first electrode for contacting a first conductivity type nanowire core, and a second electrode for contacting a second conductivity type shell enclosing the nanowire core, where the first electrode and/or at least a portion of the second electrode are flat.


Patent
Glo Ab | Date: 2015-04-16

A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.


A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.


Patent
Glo Ab | Date: 2015-09-25

A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

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