Anisimova N.P.,Girikond Scientific Research Institute |
Tropina N.E.,Girikond Scientific Research Institute |
Tropin A.N.,Girikond Scientific Research Institute
Semiconductors | Year: 2010
The opportunity to increase the output emission efficiency of PbSe-based photoluminescence structures by depositing an antireflection layer is analyzed. A model of a three-layer thin film where the central layer is formed of a composite medium is proposed to calculate the reflectance spectra of the system. In von Bruggeman's approximation of the effective medium theory, the effective permittivity of the composite layer is calculated. The model proposed in the study is used to calculate the thickness of the arsenic chalcogenide (AsS4) antireflection layer. The optimal AsS4 layer thickness determined experimentally is close to the results of calculation, and the corresponding gain in the output photoluminescence efficiency is as high as 60%. © 2010 Pleiades Publishing, Ltd.
Tallerchik B.A.,Girikond Scientific Research Institute |
Boiko S.B.,Girikond Scientific Research Institute |
Shtelmah S.V.,Girikond Scientific Research Institute
Semiconductors | Year: 2011
The possibility of synthesis of the lead, arsenic, and bismuth chalcogenides with liquid encapsulation has been investigated. The conditions and results of the synthesis of PbSe, PbS, PbTe, Bi2Te3, and As 2Te 3, as well as solid solutions in the systems PbSe-CdSe and Bi 2Te 3-Bi 2Se 3 are reported. The obtained materials have been used for fabrication of thin-film photodetectors and interference filters for infrared radiation. Recommendations concerning the choice of fluxes for liquid encapsulation and the temperature conditions of synthesis are given. © 2011 Pleiades Publishing, Ltd.