Giredmet Joint Stock Company

Moscow, Russia

Giredmet Joint Stock Company

Moscow, Russia
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Sorokin A.I.,Giredmet Joint Stock Company
Semiconductors | Year: 2017

The possibility of increasing the efficiency of a thermocouple in the temperature range of 30–320°C is studied using an approach associated with the development of segmented thermoelectric unicouples. n- and p-type thermoelectric unicouples are constructed from low-temperature thermoelectric materials based on bismuth telluride and the addition of an intermediate-temperature material based on PbTe and GeTe, respectively. The thermoelectric unicouples are fabricated by spark plasma sintering (SPS). This method provides a contact resistance of ≤10 μΩ cm. The properties of segmented and conventional unicouples are compared. The efficiency of segmented unicouples in comparison with conventional ones increases by almost 70% and attains 5.3% in the operating range of 30–320°C. © 2017, Pleiades Publishing, Ltd.


Mezhennyi M.V.,Giredmet Joint Stock Company | Mil'vidskii M.G.,Giredmet Joint Stock Company | Reznik V.Ya.,Institute for Research on the Chemical Aspects of Microelectronics
Russian Microelectronics | Year: 2011

An experimental study is reported concerning the formation of defects in nitrogen-doped dislo- cation-free silicon wafers under a multistage heat treatment to produce an internal getter, the first stage being rapid thermal annealing (RTA) under different conditions. The experiments are conducted on p-Si(100) wafers of diameter 200 mm with an oxygen content of (6-7) × 10 17 cm -3 and a doping level of 1.6 × 10 14 cm -3, the resistivity being 10-12 ω cm. The processed wafers are examined by optical microscopy and transmission electron microscopy. With normal conditions of RTA (argon, 1250°C, 20 s), the process is found to be inca- pable of creating a defect-free subsurface layer of adequate thickness, though it is able to provide the desired system of defects in the bulk. The aim is achieved by changing to sequential RTA in oxygen and argon as the first stage. The reasons for the results are presented. © Pleiades Publishing, Ltd., 2011.


Belogorokhov A.I.,Giredmet Joint Stock Company | Konovalov A.A.,Giredmet Joint Stock Company | Parkhomenko Yu.N.,Giredmet Joint Stock Company
Russian Microelectronics | Year: 2011

Liquid-phase epitaxy is used to fabricate Pb 0.8Sn 0.2Te films, undoped or doped with indium to dif- ferent levels. The depth profiles of the carrier density and dopant concentration in the films are measured and examined. A uniform dopant concentration to a depth of 15 μm is obtained. Electrical-conduction inversion is observed at a temperature of 77.3 K as the doping level is varied. The liquid-phase epitaxial method is shown to be a more suitable technology for the reproducible manufacture of epitaxial films with a given carrier den- sity, such as the ones used in terahertz detectors. © Pleiades Publishing, Ltd., 2011.

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