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Kuo S.-Y.,Chang Gung University | Lai F.-I.,Yuan Ze University | Chen W.-C.,Instrument Technology Research Center | Lin W.-T.,Yuan Ze University | And 3 more authors.
Diamond and Related Materials | Year: 2011

In this paper, we report the studies on the hetero-epitaxial growth of wurtzite indium nitride (InN) thin films on oxide buffer layer by RF metal-organic molecular beam epitaxy (RF-MOMBE) system. Oxide buffer layer was pre-sputtered using RF sputtering technique. The structural properties and surface morphology were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). We also investigated the optical properties by temperature-dependence photoluminescence (PL). Near-infrared emission peak centered at 0.75 eV was observed from PL measurement. The irregular and asymmetric PL line shape was caused by absorbed moisture and surface electron accumulation in InN films. According to the fitting results of PL spectra measured at 20 K, we could estimate the bandgap and Fermi level is 0.65 eV and 113 meV, which confirm to previous reports. Our results reveal that the oxide thin film could be a suitable buffer layer for engineering the growth of InN on sapphire wafer, and it might be also applicable for other lattice-mismatched III-V hetero-epitaxial systems. © 2011 Elsevier B.V. All rights reserved. Source


Lu J.-C.,Gintech Energy Corporation | Yang T.,National Cheng Kung University
International Journal of Production Research | Year: 2015

Over the past few decades, a considerable number of studies have been reported on assembly lines or less automated factories. Little attention has been given to implementing lean tools to a highly automated manufacturing environment. It is, therefore, necessary to make a more highly automated factory lean by considering both the manufacturing system variability and demand uncertainty. The purpose of this paper is to propose an effective lean tool to help practical lean participants successfully implement lean practices in a highly automated manufacturing environment. This study presents an example of how lean standard work is implemented and the throughput of a pacemaker workstation is improved by solving the low work-in-process buffer problem. A practical case from a photovoltaic module process with a semi-automated production line is used to illustrate the proposed method. The implementation results are promising. They showed a 37.5% labour reduction prior to the pacemaker workstation and a 304.7% increase in the daily throughput at the bottleneck workstation. © 2014 Taylor & Francis. Source


Wei T.-C.,National Tsing Hua University | Pan T.-C.,National Tsing Hua University | Chen C.-M.,National Chung Hsing University | Lai K.-C.,National Chung Hsing University | Wu C.-H.,Gintech Energy Corporation
Electrochemistry Communications | Year: 2015

In this study, a post-annealing-free, adhesive nickel/phosphorous (Ni/P) layer was deposited on a 3-[2-(2-aminoethylamino)ethylamino] propyl-trimethoxysilane-modified (ETAS-modified) silicon (Si) surface through an electroless deposition process catalyzed by a novel polyvinylpyrrolidone-capped palladium nanocluster (PVP-nPd). ETAS was covalently bonded on the Si surface, whereas the amino groups on ETAS bridged with the palladium core in the PVP-nPd clusters. Because of the mentioned two effects, the deposited Ni/P layer showed superior adhesion on the Si wafer without the requirement of conventional annealing treatment. Compared with the Ni/P films deposited on bare and ETAS-modified Si surfaces by using commercial Sn/Pd colloids, the adhesion of the Ni/P film catalyzed by PVP-nPd on the ETAS-modified Si wafer improved 4- and 2-fold, respectively. © 2015 Elsevier B.V. Source


Chen C.-H.,National Cheng Kung University | Yu T.-H.,National Cheng Kung University | Yu T.-H.,Gintech Energy Corporation | Lee Y.-C.,National Cheng Kung University
Journal of Microelectromechanical Systems | Year: 2011

This paper reports on the fabrication of polymer-based metallic wire-grid polarizers using a direct metal contact printing method. The proposed method can directly transfer a metal pattern from a silicon mold to a soft plastic substrate simply by roller pressing and infrared (IR) heating. With properly chosen loading contact pressure and heating temperature, metallic linear grating structures with a linewidth of 60 nm, a period of 170 nm, and an area size of 2.5 \times 2.5cm}2 are successfully formed on the surface of a polyethylene terephtalate (PET) substrate. The optical performance of the fabricated flexible polarizers is experimentally measured and numerically analyzed in the near-IR spectrum with wavelength from 800 to 1500 nm. Inspired by the numerical simulation results, the optical characteristics of the flexibe polarizers are further enhanced by reactive ion etching on the PET substrate. Good agreements between experiments and theoretical simulation are obtained. Future developments and potential applications of this metal contact transfer lithography method will be addressed. © 2011 IEEE. Source


Patent
Gintech Energy Corporation | Date: 2011-07-26

A photovoltaic panel includes a photovoltaic array, an electrically conductive busbar, a plurality of electrically conductive fingers and an electrically conductive ribbon. The electrically conductive busbar is disposed on the photovoltaic array and having a plurality of connection ribs. The electrically conductive fingers are disposed on the photovoltaic array and connected with the connection ribs respectively. The electrically conductive ribbon is soldered on the electrically conductive busbar, wherein a gap is formed between each electrically conductive finger and the electrically conductive ribbon.

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