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Taufkirchen, Germany

Erfurth W.,Max Planck Institute of Microstructure Physics | Thompson A.,DisChem Inc. | Unal N.,GenISys GmbH
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

This paper presents the findings of a cationic surface active agent used to promote adhesion on an InGaAs multilayer system on GaAs. The improved adhesion of the HSQ resist allowed the electron exposure dose to be reduced by a factor of four, and enabled the production of features sizes down to 30nm. Moreover, the process latitude is greatly increased for both small and large lithographic features. © 2013 SPIE. Source


Motzek K.,Fraunhofer Institute for Integrated Systems and Device Technology | Vogler U.,SUSS MicroOptics SA | Hennemeyer M.,Suss MicroTec | Hornung M.,Suss MicroTec | And 3 more authors.
Microelectronic Engineering | Year: 2011

We use numerical simulation and optimization algorithms to apply optical proximity correction (OPC) to different mask structures for exposure on a Mask Aligner in proximity mode. The range of OPC solutions reaches from subtle changes in the mask layout to masks that have lost almost all resemblance to the structure to be printed. An extreme case is the printing of periodic structures where we make use of the image reversal caused by the Talbot effect. We also show the improvement that can be obtained when co-optimizing the angular spectrum of the illumination, i.e. when performing a source-mask optimization (SMO). © 2011 Elsevier B.V. All rights reserved. Source


The present disclosure relates to beam writing technologies. In detail, a technique for compensating process artifacts of a mask layout transfer process is described. A method implementation of that technique comprises modeling, for a target mask layout, an intensity profile resulting from exposing a resist on a masking layer by beam writing. Further, a contour and a profile of the exposed resist after development are modeled from the intensity profile. Then, a geometry of the masking layer after etching is modeled from the resist contour and the resist profile. For any deviation of the modeled geometry from the target mask layout, an adjustment compensating the deviation can thus be determined.


Arat K.T.,GenISys GmbH | Bolten J.,AMO GmbH | Klimpel T.,GenISys GmbH | Unal N.,GenISys GmbH
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

The electric field distribution and charging effects in Scanning Electron Microscopy (SEM) were studied by extending a Monte-Carlo based SEM simulator by a fast and accurate multigrid (MG) based 3D electric field solver. The main focus is on enabling short simulation times with maintaining sufficient accuracy, so that SEM simulation can be used in practical applications. The implementation demonstrates a gain in computation speed, when compared to a Gauss-Seidel based reference solver is roughly factor of 40, with negligible differences in the result (∼10-6 V). In addition, the simulations were compared with experimental SEM measurements using also complex 3D sample, showing that i) the modelling of e-fields improves the simulation accuracy, and ii) multigrid method provide a significant benefit in terms of simulation time. © 2016 SPIE. Source


Unal N.,GenISys GmbH | Charlton M.D.B.,University of Southampton | Wang Y.,University of Southampton | Waizmann U.,Max Planck Institute for Solid State Research | And 2 more authors.
Microelectronic Engineering | Year: 2011

The quality of e-beam proximity effect correction depends on the quality of the proximity effect model parameters, which are not accessible to direct measurement. Monte Carlo simulation is capable of determining the electron scattering coefficients, but does not include the process induced effects such as resist blur. Therefore, various experimental methods have been suggested (Stevensat et al. (1986) [1]; Rishton and Kern (1987) [2]; Hudek (2006) [3]). Most are either highly labor intensive due to a large required number of critical dimension measurements, or simple in the experimental evaluation, but limited in accuracy (Babin and Svintsov (1992) [4]), since resist effects interfere with the evaluation criterion. This paper presents an easy to adapt experimental calibration method based on visual inspection of a "Best Dose Sensor", and its application to calibrate long- and mid-range effects. © 2011 Elsevier B.V. All rights reserved. Source

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