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Rasadujjaman M.,Yamanashi University | Rasadujjaman M.,Dhaka University of Engineering and Technology | Watanabe M.,Yamanashi University | Sudoh H.,Gas phase Growth Ltd. | And 2 more authors.
Thin Solid Films | Year: 2015

We report the low-temperature deposition of Cu on a Ni-lined substrate in supercritical carbon dioxide. A novel Cu(I) amidinate precursor was used to reduce the deposition temperature. From the temperature dependence of the growth rate, the activation energy for Cu growth on the Ni film was determined to be 0.19 eV. The films and interfaces were characterized by Auger electron spectroscopy. At low temperature (140 °C), we successfully deposited a Cu/Ni stack with a sharp Cu/Ni interface. The stack had a high adhesion strength (> 1000 mN) according to microscratch testing. The high adhesion strength originated from strong interfacial bonding between the Cu and the Ni. However, at a higher temperature (240 °C), significant interdiffusion was observed and the adhesion became weak. © 2015 Elsevier B.V. All rights reserved. Source


Rasadujjaman Md.,Yamanashi University | Rasadujjaman Md.,Dhaka University of Engineering and Technology | Watanabe M.,Yamanashi University | Sudoh H.,Gas phase Growth Ltd. | And 2 more authors.
Microelectronic Engineering | Year: 2015

We report supercritical fluid chemical deposition (SFCD) of Cu films in Ru- and TiN-lined deep nanotrenches using a new non-fluorinated Cu(I) amidinate precursor. The Cu(I) amidinate precursor dispersed well in an acetone/CO2 solution with molecular hydrogen as the reducing agent at very low temperatures. High-purity Cu films were grown on both Ru and TiN substrates at a lower deposition temperature (140 °C) than typical temperatures reported for CuII(hfac)2 and CuII(dibm)2 precursors. The temperature dependence of the growth rate was studied and the growth rates were determined to be 10-14 nm/min and 6-13 nm/min for Ru and TiN substrates, respectively, in a temperature range of 140-240 °C. On the Ru surface, Cu nucleated densely, forming smooth, strongly adherent films. At 140 °C, the excellent filling capability of Cu in Ru- or TiN-lined nanotrenches was demonstrated. © 2014 Elsevier B.V. All rights reserved. Source


Hamada S.,Meiji University | Horiike T.,Meiji University | Uno T.,Meiji University | Ishikawa M.,Gas phase Growth Ltd. | And 3 more authors.
Materials Science Forum | Year: 2012

We successfully established composition controlled GexSbyTez (GST) films with smooth surface by applying appropriate deposition conditions for chemical vapor deposition (CVD). By increasing Ge flow ratio or reducing substrate temperature, the average grain size was reduced and the film flatness was improved. As the results, we succeeded to obtain the extremely smooth surface, and also to fill a finite hole with conformal film deposition. All GST films showed mainly FCC crystal or amorphous structures, which are utilized in the proposed phase change random access memory (PRAM), in spite of the wide range of composition control. © (2012) Trans Tech Publications, Switzerland. Source


Ohshita Y.,Toyota Technological Institute | Ikeda K.,Toyota Technological Institute | Suzuki H.,University of Miyazaki | Machida H.,Gas phase Growth Ltd. | And 5 more authors.
Japanese Journal of Applied Physics | Year: 2014

The local vibration modes of N-H related defects in GaAsN are studied using isotopes. When GaAsN is grown through chemical beam epitaxy (CBE) using triethylgallium/tris(dimethylamino)arsenic/monomethylhydrazine gas, there are several local vibration modes (LVMs) in Fourier transform infrared (FTIR) spectra. Signals with stretching mode peaks at 2952, 3098, and 3125 cm -1 are reported, along with new wagging and stretching mode peaks at 960 and 3011 cm-1, which exist only in crystals grown through CBE. When the film is grown using deuterated MMHy as a nitrogen source, new peaks at 2206, 2302, 2318, 2245, and 714cm-1 appear. This suggests that D related defects are created because of the deuterated MMHy. The ratios of frequencies of these new peaks to those obtained from crystals grown using MMHy are nearly 1.34. This suggests that all defects in GaAsN grown through CBE, which appear as LVMs, are N-H related defects. Especially, those with LVMs at 960 and 3011 cm-1 are new N-H defects only found in GaAsN grown through CBE. © 2014 The Japan Society of Applied Physics. Source


Patent
Tokyo Electron and Gas Phase Growth Ltd. | Date: 2012-10-04

A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

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