GaNotec Inc

Tempe, AZ, United States

GaNotec Inc

Tempe, AZ, United States
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Meng F.Y.,Arizona State University | Han I.,Arizona State University | McFelea H.,Arizona State University | Lindow E.,GaNotec Inc | And 4 more authors.
Journal of Crystal Growth | Year: 2011

GaN was grown directly on (0 0 0 1) sapphire by a two-step process using hydride vapor phase epitaxy (HVPE). Nucleation layers deposited on sapphire at ∼450-500 °C consisted of localized epitaxial wurtzite GaN nano-crystals. In between and above the epitaxial nano-crystals were randomly oriented wurtzite GaN nano-crystals. GaN islands of various sizes and shapes were formed, after annealing between ∼900 and 1000 °C, through a decompositionredeposition process. Preferential growth of GaN occurred on the islands that had an epitaxial relationship with sapphire during the subsequent high-temperature overgrowth. Threading dislocations were observed in isolated GaN islands that were formed after annealing. © 2011 Elsevier B.V. All rights reserved.


Meng F.Y.,Arizona State University | Han I.,Arizona State University | McFelea H.,Arizona State University | Lindow E.,GaNotec Inc. | And 4 more authors.
Scripta Materialia | Year: 2011

Sapphire substrates showed nanosized surface pits after the growth of GaN layers using a two-step process by hydride vapor-phase epitaxy. Threading dislocations with Burgers vectors of c and c + a were found to originate from the pits. Cross-sectional transmission electron microscopy observations are used to elucidate the mechanism of dislocation generation. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.


Meng F.Y.,Arizona State University | Han I.,Arizona State University | McFelea H.,Arizona State University | Lindow E.,GaNotec Inc. | And 4 more authors.
Scripta Materialia | Year: 2011

We report direct observation of the formation of threading dislocations from stacking faults in GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy. High-resolution electron microscopy revealed that the stacking sequence of the stacking fault is "AaBbCcBbAa" and threading dislocations are generated from Shockley partials bounding the stacking fault. A model is proposed to explain how such stacking faults lead to the generation of threading dislocations. © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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