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Toronto, Canada

Roberts J.,GaN Systems
PCIM Europe Conference Proceedings | Year: 2014

The current drive-train power requirements of most hybrid vehicles (HVs) and electric vehicles (EVs) are met by using Silicon IGBT devices. Higher performance can be achieved with GaN power transistors because they can provide lower losses, higher operating temperatures and smaller systems. The improvements offered by the GaN devices are yet to be realized in deployed subsystems. Several groups of researchers are experimenting and reporting upon GaN transistors that are aimed at replacing Si IGBTs. The results achieved by GaN Systems are presented and these are compared to other producers of GaN devices. © VDE VERLAG GMBH.


Patent
GaN Systems | Date: 2013-12-13

Devices and systems comprising driver circuits are disclosed for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement to a high voltage GaN HEMT, for improved control of noise and voltage transients. Co-packaging of a GaN transistor die and a CMOS driver die using island topology contacts, through substrate vias, and a flip-chip, stacked configuration provides interconnections with low inductance and resistance, and provides effective thermal management. Co-packaging of a CMOS input interface circuit with the CMOS driver and GaN transistor allows for a compact, integrated CMOS driver with enhanced functionality including shut-down and start-up conditioning for safer operation, particularly for high voltage and high current switching. Preferred embodiments also provide isolated, self-powered, high speed driver devices, with reduced input losses.


Patent
GaN Systems | Date: 2011-04-13

A Gallium Nitride (GaN) series of devicestransistors and diodes are disclosedthat have greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The devices also include a simpler and superior flip chip connection scheme and a means to reduce the thermal resistance. A simplified fabrication process is disclosed and the layout scheme which uses island electrodes rather than finger electrodes is shown to increase the active area density by two to five times that of conventional inter-digitated structures. Ultra low on resistance transistors and very low loss diodes can be built using the island topology. Specifically, the present disclosure provides a means to enhance cost/effective performance of all lateral GaN structures.


A gallium nitride (GaN) device that has greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The layout scheme, which uses island electrodes rather than finger electrodes, is shown to increase the active area density over that of conventional interdigitated structures. Ultra low on resistance transistors can be built using the island topology. Specifically, the present invention, which uses conventional GaN lateral technology and electrode spacing, provides a means to enhance cost/effective performance of all lateral GaN structures.


Grant
Agency: GTR | Branch: Innovate UK | Program: | Phase: Collaborative Research & Development | Award Amount: 389.95K | Year: 2012

This project brings together the combined expertise of automotive, aerospace and energy conversion systems companies, and academic experts, to develop solutions for high temperature capable power electronic converters. The expertise developed on this project will enable the consortium companies to develop compact and cost-reduced converter solutions that will harden and demonstrate UK-based expertise and help to accelerate the adoption of hybrid and full electric vehicles as well as contribute to global carbon emissions targets. The main key to achieving this goal is to eliminate the significant cost and weight of the cooling system by producing a solution that can operate at high temperatures while maintaining reliability objectives.

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