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Lamkin I.A.,Saint Petersburg Electrotechnical University l | Tarasov S.A.,Saint Petersburg Electrotechnical University l | Petrov A.A.,Saint Petersburg Electrotechnical University l | Menkovich E.A.,Saint Petersburg Electrotechnical University l | And 2 more authors.
Journal of Physics: Conference Series | Year: 2014

The paper is devoted to the development and study of solar-blind and visible-blind photodetectors. We report on the spectral characteristics of the ultraviolet photodetectors based on Shottky barrier to the epitaxial layers of the n-AlxGa1-xN solid solutions. The use of Schottky barrier photodiodes is advantageous since it does not require the growth of additional epitaxial layer of p-type conductivity. © Published under licence by IOP Publishing Ltd. Source


Lamkin I.A.,Saint Petersburg Electrotechnical University l | Tarasov S.A.,Saint Petersburg Electrotechnical University l | Petrov A.A.,Saint Petersburg Electrotechnical University l | Menkovich E.A.,Saint Petersburg Electrotechnical University l | And 2 more authors.
Journal of Physics: Conference Series | Year: 2014

The results of an investigation into the properties of double-layer metal contacts to the epitaxial layers of AlxGa1-xN solid solutions for ultraviolet photodetectors and UHF electronic devices are presented. The processes of atom redistribution during the formation of metal layers and their subsequent annealing to form low resistance contacts were studied by Auger electron spectroscopy. The results obtained allowed us to develop a technique for creating ohmic contacts having low resistance value. © Published under licence by IOP Publishing Ltd. Source


Lamkin I.A.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Solomonov A.V.,Saint Petersburg Electrotechnical University | Andreev M.Y.,Saint Petersburg Electrotechnical University | Kurin S.Yu.,GaN Crystals Ltd.
Journal of Physics: Conference Series | Year: 2015

Design, growth and studies of photosensitive structures based on Ag-GaP and Ag- AlxGa1-xN contacts are reported. Methods for structure selectivity control, which allow changing the sensitivity spectrum half-width in a range of 11-210 nm were worked out. By varying the metal layer thickness, a set of Ag-GaP short-wavelength photodetectors (PD) was fabricated. The set includes PDs from broadband (spectrum half-width Δλ=210 nm, sensitivity SI = 0,19 A/W) to visible-blind (Δλ=15 nm, SI = 0,034 A/W). The use of Ag-AlxGa1-xN structures provided increased sensitivity (SI = 0,071 A/W) and Δλ reduced to 11 nm due to special selection of solid solution composition. © Published under licence by IOP Publishing Ltd. Source


Maki J.-M.,Helsinki Institute of Physics | Makkonen I.,Helsinki Institute of Physics | Tuomisto F.,Aalto University | Karjalainen A.,Aalto University | And 4 more authors.
Physical Review B - Condensed Matter and Materials Physics | Year: 2011

In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society. Source


Lamkin I.A.,Saint Petersburg Electrotechnical University | Andreev M.Y.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Solomonov A.V.,Saint Petersburg Electrotechnical University | Kurin S.Y.,GaN Crystals Ltd.
Proceedings of the 2015 IEEE North West Russia Section Young Researchers in Electrical and Electronic Engineering Conference, ElConRusNW 2015 | Year: 2015

A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined. © 2015 IEEE. Source

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