GaN Crystals Ltd.

Saint Petersburg, Russia

GaN Crystals Ltd.

Saint Petersburg, Russia
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Altimime S.M.,Saint Petersburg Electrotechnical University | Evseenkov A.S.,Saint Petersburg Electrotechnical University | Mikhailov I.I.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | And 4 more authors.
Journal of Physics: Conference Series | Year: 2016

The selective Au-AlGaN-based Schottky barrier photodetectors operating in different UV ranges have been fabricated. The wide bandgap window effect and the over barrier emission are proposed as methods for control of the photosentivity spectrum. Selective photodetectors were fabricated with the following parameters: a full width at half maximum of 5-6 nm with a maximum at 355 nm, 362 nm, 366 nm, and a sensitivity up to 140 mA/W.


Evseenkov A.S.,St Petersburg Electrotechnical University Lett | Kurin S.Yu.,GaN Crystals Ltd. | Tadtaev P.O.,St Petersburg Electrotechnical University Lett | Tarasov S.A.,St Petersburg Electrotechnical University Lett | Solomonov A.V.,St Petersburg Electrotechnical University Lett
Journal of Physics: Conference Series | Year: 2016

The quantum efficiency of AlInGaN-based LED structures with different active region thickness at different temperatures and biases was studied. The strong influence of the thickness of the active region on the characteristics of the samples was observed. Through the decrease of the active region thickness not only the emissive power dwindled but also thermodynamic properties tended to deteriorate and low temperature stability of the active region was observed. It was shown that the decrease in internal quantum efficiency through the increase of the current density was caused by charge leak from the quantum well. The heating of the active region due to the higher Auger recombination frequency led to the shift in the peak wavelength of the emission spectrum and lower emission power.


Andreev M.Y.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Lamkin I.A.,Saint Petersburg Electrotechnical University | Mikhailov I.I.,Saint Petersburg Electrotechnical University | And 2 more authors.
Journal of Physics: Conference Series | Year: 2016

The Created selective photosensitive structures based on the Schottky barrier Au- AlGaN are for different ranges of the ultraviolet region of the spectrum. The methods that has been shown here, of controlling the spectrum of photosensitivity, are due to the effect of the wide windows and the effect of above-barrier transport in the structures Au-AlGaN. © Published under licence by IOP Publishing Ltd.


Lamkin I.A.,Saint Petersburg Electrotechnical University l | Tarasov S.A.,Saint Petersburg Electrotechnical University l | Petrov A.A.,Saint Petersburg Electrotechnical University l | Menkovich E.A.,Saint Petersburg Electrotechnical University l | And 2 more authors.
Journal of Physics: Conference Series | Year: 2014

The paper is devoted to the development and study of solar-blind and visible-blind photodetectors. We report on the spectral characteristics of the ultraviolet photodetectors based on Shottky barrier to the epitaxial layers of the n-AlxGa1-xN solid solutions. The use of Schottky barrier photodiodes is advantageous since it does not require the growth of additional epitaxial layer of p-type conductivity. © Published under licence by IOP Publishing Ltd.


Lamkin I.A.,Saint Petersburg Electrotechnical University l | Tarasov S.A.,Saint Petersburg Electrotechnical University l | Petrov A.A.,Saint Petersburg Electrotechnical University l | Menkovich E.A.,Saint Petersburg Electrotechnical University l | And 2 more authors.
Journal of Physics: Conference Series | Year: 2014

The results of an investigation into the properties of double-layer metal contacts to the epitaxial layers of AlxGa1-xN solid solutions for ultraviolet photodetectors and UHF electronic devices are presented. The processes of atom redistribution during the formation of metal layers and their subsequent annealing to form low resistance contacts were studied by Auger electron spectroscopy. The results obtained allowed us to develop a technique for creating ohmic contacts having low resistance value. © Published under licence by IOP Publishing Ltd.


Maki J.-M.,Helsinki Institute of Physics | Makkonen I.,Helsinki Institute of Physics | Tuomisto F.,Aalto University | Karjalainen A.,Aalto University | And 4 more authors.
Physical Review B - Condensed Matter and Materials Physics | Year: 2011

In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society.


Kurin S.Y.,Nitride Crystals Inc. | Antipov A.A.,GaN Crystals Ltd. | Barash I.S.,GaN Crystals Ltd. | Bublik V.T.,Moscow Institute of Steel And Alloys | And 7 more authors.
Russian Microelectronics | Year: 2013

Some results on the creation of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown on aluminum nitride (AlN) substrates using the method of chloride-hydride epitaxy are presented. The peak wavelengths lie within the range of 360-365 nm, the width of a spectral curve is 10-13 nm, and the output optical power of light-emitting diode chips is 50 mW at a current of 350 mA. © 2013 Pleiades Publishing, Ltd.


Lamkin I.A.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Solomonov A.V.,Saint Petersburg Electrotechnical University | Andreev M.Y.,Saint Petersburg Electrotechnical University | Kurin S.Yu.,GaN Crystals Ltd.
Journal of Physics: Conference Series | Year: 2015

Design, growth and studies of photosensitive structures based on Ag-GaP and Ag- AlxGa1-xN contacts are reported. Methods for structure selectivity control, which allow changing the sensitivity spectrum half-width in a range of 11-210 nm were worked out. By varying the metal layer thickness, a set of Ag-GaP short-wavelength photodetectors (PD) was fabricated. The set includes PDs from broadband (spectrum half-width Δλ=210 nm, sensitivity SI = 0,19 A/W) to visible-blind (Δλ=15 nm, SI = 0,034 A/W). The use of Ag-AlxGa1-xN structures provided increased sensitivity (SI = 0,071 A/W) and Δλ reduced to 11 nm due to special selection of solid solution composition. © Published under licence by IOP Publishing Ltd.


Menkovich E.A.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Lamkin I.A.,Saint Petersburg Electrotechnical University | Kurin S.Yu.,GaN Crystals Ltd. | And 5 more authors.
Journal of Physics: Conference Series | Year: 2013

In this paper we report on dependence of the temperature of active layers (ALs) of heterostructures of light-emitting diodes (LEDs) based on AlGaN (UV LEDs) and InGaN (blue LEDs) on various current values (up to 150 mA). It is shown that the heating of the heterostructures is directly related to the concentration of defects. UV LEDs are characterized by a higher temperature than blue LEDs, they also demonstrate a lower wall-plug efficiency (WPE) (about 1.5% at 20 mA). The WPE of blue LEDs with and without the superlattice are 15% and 18%, respectively. To verify the accuracy of the performed measurements the theoretical calculation of the AL temperature according to Van Roosbroeck-Shockley theory and the model of 2D-combined density of states is carried out. © Published under licence by IOP Publishing Ltd.


Lamkin I.A.,Saint Petersburg Electrotechnical University | Andreev M.Y.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Solomonov A.V.,Saint Petersburg Electrotechnical University | Kurin S.Y.,GaN Crystals Ltd.
Proceedings of the 2015 IEEE North West Russia Section Young Researchers in Electrical and Electronic Engineering Conference, ElConRusNW 2015 | Year: 2015

A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined. © 2015 IEEE.

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