GaN Crystals Ltd.

Saint Petersburg, Russia

GaN Crystals Ltd.

Saint Petersburg, Russia

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Lamkin I.A.,Saint Petersburg Electrotechnical University l | Tarasov S.A.,Saint Petersburg Electrotechnical University l | Petrov A.A.,Saint Petersburg Electrotechnical University l | Menkovich E.A.,Saint Petersburg Electrotechnical University l | And 2 more authors.
Journal of Physics: Conference Series | Year: 2014

The paper is devoted to the development and study of solar-blind and visible-blind photodetectors. We report on the spectral characteristics of the ultraviolet photodetectors based on Shottky barrier to the epitaxial layers of the n-AlxGa1-xN solid solutions. The use of Schottky barrier photodiodes is advantageous since it does not require the growth of additional epitaxial layer of p-type conductivity. © Published under licence by IOP Publishing Ltd.


Lamkin I.A.,Saint Petersburg Electrotechnical University l | Tarasov S.A.,Saint Petersburg Electrotechnical University l | Petrov A.A.,Saint Petersburg Electrotechnical University l | Menkovich E.A.,Saint Petersburg Electrotechnical University l | And 2 more authors.
Journal of Physics: Conference Series | Year: 2014

The results of an investigation into the properties of double-layer metal contacts to the epitaxial layers of AlxGa1-xN solid solutions for ultraviolet photodetectors and UHF electronic devices are presented. The processes of atom redistribution during the formation of metal layers and their subsequent annealing to form low resistance contacts were studied by Auger electron spectroscopy. The results obtained allowed us to develop a technique for creating ohmic contacts having low resistance value. © Published under licence by IOP Publishing Ltd.


Maki J.-M.,Helsinki Institute of Physics | Makkonen I.,Helsinki Institute of Physics | Tuomisto F.,Aalto University | Karjalainen A.,Aalto University | And 4 more authors.
Physical Review B - Condensed Matter and Materials Physics | Year: 2011

In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society.


Kurin S.Y.,GaN Crystals Ltd. | Doronin V.D.,National Research Nuclear University MEPhI | Antipov A.A.,GaN Crystals Ltd. | Papchenko B.P.,Saint Petersburg State University of Information Technologies, Mechanics and Optics | And 5 more authors.
Russian Microelectronics | Year: 2014

The results of modeling photoelectric converters in a system with spectral splitting of solar energy are detailed. The solar radiation in this system is divided into three spectral regions (Δλ1 < 500 nm, Δλ2 = 500–725 nm, and Δλ3 > 725 nm) with the use of dichroic filters and is then converted into electric energy by the photoelectric converters based on single-junction InGaN/GaN and GaAs/AlGaAs heterostructures and monocrystalline c-Si silicon. Special attention is paid to the study regarding the possibility of expanding the spectral absorption range of the system by increasing the conversion efficiency in the ultraviolet part of the spectrum. The overall efficiency of the system in the entire spectrum varies from 21 to 37%, depending on the heterostructure design of the single-junction photoelectric converters and the configuration of the optical systems. © 2014, Pleiades Publishing, Ltd.


Kurin S.Y.,Nitride Crystals Inc. | Antipov A.A.,GaN Crystals Ltd. | Barash I.S.,GaN Crystals Ltd. | Bublik V.T.,Moscow Institute of Steel And Alloys | And 7 more authors.
Russian Microelectronics | Year: 2013

Some results on the creation of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown on aluminum nitride (AlN) substrates using the method of chloride-hydride epitaxy are presented. The peak wavelengths lie within the range of 360-365 nm, the width of a spectral curve is 10-13 nm, and the output optical power of light-emitting diode chips is 50 mW at a current of 350 mA. © 2013 Pleiades Publishing, Ltd.


Lamkin I.A.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Solomonov A.V.,Saint Petersburg Electrotechnical University | Andreev M.Y.,Saint Petersburg Electrotechnical University | Kurin S.Yu.,GaN Crystals Ltd.
Journal of Physics: Conference Series | Year: 2015

Design, growth and studies of photosensitive structures based on Ag-GaP and Ag- AlxGa1-xN contacts are reported. Methods for structure selectivity control, which allow changing the sensitivity spectrum half-width in a range of 11-210 nm were worked out. By varying the metal layer thickness, a set of Ag-GaP short-wavelength photodetectors (PD) was fabricated. The set includes PDs from broadband (spectrum half-width Δλ=210 nm, sensitivity SI = 0,19 A/W) to visible-blind (Δλ=15 nm, SI = 0,034 A/W). The use of Ag-AlxGa1-xN structures provided increased sensitivity (SI = 0,071 A/W) and Δλ reduced to 11 nm due to special selection of solid solution composition. © Published under licence by IOP Publishing Ltd.


Menkovich E.A.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Lamkin I.A.,Saint Petersburg Electrotechnical University | Kurin S.Yu.,GaN Crystals Ltd. | And 5 more authors.
Journal of Physics: Conference Series | Year: 2013

In this paper we report on dependence of the temperature of active layers (ALs) of heterostructures of light-emitting diodes (LEDs) based on AlGaN (UV LEDs) and InGaN (blue LEDs) on various current values (up to 150 mA). It is shown that the heating of the heterostructures is directly related to the concentration of defects. UV LEDs are characterized by a higher temperature than blue LEDs, they also demonstrate a lower wall-plug efficiency (WPE) (about 1.5% at 20 mA). The WPE of blue LEDs with and without the superlattice are 15% and 18%, respectively. To verify the accuracy of the performed measurements the theoretical calculation of the AL temperature according to Van Roosbroeck-Shockley theory and the model of 2D-combined density of states is carried out. © Published under licence by IOP Publishing Ltd.


Lamkin I.A.,Saint Petersburg Electrotechnical University | Andreev M.Y.,Saint Petersburg Electrotechnical University | Tarasov S.A.,Saint Petersburg Electrotechnical University | Solomonov A.V.,Saint Petersburg Electrotechnical University | Kurin S.Y.,GaN Crystals Ltd.
Proceedings of the 2015 IEEE North West Russia Section Young Researchers in Electrical and Electronic Engineering Conference, ElConRusNW 2015 | Year: 2015

A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined. © 2015 IEEE.

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