Entity

Time filter

Source Type

Bochum, Germany

Franco J.,IMEC | Franco J.,Catholic University of Leuven | Eneman G.,IMEC | Eneman G.,FWO Inc | And 4 more authors.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2011

Hot carrier (HC) reliability of Si-passivated, Ge channel, p -channel metal-oxide-semiconductor field-effect transitors (pMOSFETs) with a physical gate length of 70 nm is investigated in this article. HCs are reported to affect the reliability of these devices more than negative bias temperature instability, which is normally considered as the most serious reliability concern for Si p -channel field effect transistors. The impact of different halo implant conditions on the HC reliability of Ge pMOSFETs is then studied. High energy and high dose halo implants, while being very effective for threshold voltage adjustment of short-channel devices, can remarkably reduce device lifetime under HC stress condition due to the enhanced electric field peak near the drain side of the channel. HC reliability, therefore, should be carefully taken into account when optimizing halo implant conditions for Ge p -channel metal-oxide-semiconductor. © 2011 American Vacuum Society. Source


Arts S.,Managerial Economics | Arts S.,FWO Inc | Appio F.P.,SantAnna School of Advanced Studies | Van Looy B.,Managerial Economics | And 2 more authors.
Scientometrics | Year: 2013

Since Schumpeter's (The theory of economic development, 1934) seminal work on economic development, innovation is considered as one of the main drivers of firm performance and economic growth. At the same time, technological innovations vary considerably in terms of impact with only a minority of new inventions contributing significantly to technological progress and economic growth. More recently a number of indicators derived from patent documents have been advanced to capture the nature and impact of technological inventions. In this paper, we compare and validate these indicators within the field of biotechnology. An extensive analysis of the recent history of biotechnology allows us to identify the most important inventions (n = 214) that shaped the field of biotechnology in the time period 1976-2001. A considerable number of these inventions have been patented between 1976 and 2001 (n = 117, 55 %). For all USPTO biotech patents filed between 1976 and 2001 (n = 84,119), relevant indicators have been calculated. In a subsequent step, we assess which indicators allow us to distinguish between the most important patented inventions and their less influential counterparts by means of logistic regression models. Our findings show that the use of multiple, complementary indicators provides the most comprehensive picture. In addition, it is clear that ex-post indicators reflecting impact and value outperform ex-ante indicators reflecting the nature and novelty of the invention in terms of precision and recall. © 2013 Akadémiai Kiadó, Budapest, Hungary. Source


Ferranti F.,Vrije Universiteit Brussel | Ferranti F.,FWO Inc | Magnani A.,University of Naples Federico II | D'Alessandro V.,University of Naples Federico II | And 4 more authors.
IEEE Transactions on Components, Packaging and Manufacturing Technology | Year: 2015

We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system behavior. In order to improve the accuracy and to reduce the number of computationally expensive thermal simulations needed for the macromodel generation, a decomposition of the frequency-domain data samples of the thermal impedance matrix is proposed. The approach is applied to study the impact of layout variations on the dynamic ET behavior of a state-of-the-Art 8-finger AlGaN/GaN high-electron mobility transistor grown on a SiC substrate. The simulation results confirm the high accuracy and computational gain obtained using parameterized macromodels instead of a standard method based on iterative complete numerical analysis. © 2011-2012 IEEE. Source


Vandenbroeck S.,Catholic University of Leuven | De Geest S.,Catholic University of Leuven | De Geest S.,University of Basel | Zeyen T.,University Hospitals Leuven | And 3 more authors.
Eye | Year: 2011

The aim of this review was to summarize literature in view of patient-reported outcome (PRO) instruments for glaucoma and provide guidance on how outcomes are best assessed based on evidence about their content and validity. A systematic literature review was performed on papers describing the developmental process and/or psychometric properties of glaucoma or vision-specific PRO-instruments. Each of them was assessed on their adherence to a framework of quality criteria. Fifty-three articles were identified addressing 27 PRO-instruments. In all, 18 PRO's were developed for glaucoma and 9 for diverse ophthalmologic conditions. Seven instruments addressed functional status, 11 instruments quality of life and 9 instruments disease and treatment-related factors. Most of the instruments demonstrated only partially adherence to predefined quality standards. The tools for assessing functional status were of poor quality, while the Glaucoma Quality of Life Questionnaire and the Vision Quality of Life Index were well-developed QoL measures, yet only validated using classical techniques. The Rasch-scaled QoL-tools, IVI and VCM1 need to improve their item-content for glaucoma patients. The questionnaires to measure adherence should improve their validity and the Treatment Satisfaction Survey for Intra Ocular Pressure pops out as the highest quality tool for measuring topical treatment side effects. This review revealed that most PRO-instruments demonstrated poor developmental quality, more specifically a lack of conceptual framework and item generation strategies not involving the patients perspective. Psychometric characteristics were mostly tested using classical validation techniques. © 2011 Macmillan Publishers Limited All rights reserved. Source


Mitard J.,IMEC | Witters L.,IMEC | Hellings G.,Catholic University of Leuven | Krom R.,Catholic University of Leuven | And 23 more authors.
IEEE Symposium on VLSI Circuits, Digest of Technical Papers | Year: 2011

A 2nd generation of Implant Free Quantum Well pFETs is presented in this work. SiGe25%-embedded Source/Drain was implemented, leading to an excellent short channel control and logic performance (1mA/um-ION@-1V). No narrow-width effect was found and a multi-VTH strategy is also offered. Performance of the strained-IFQW pFETs was finally demonstrated at lower V DD. © 2011 JSAP (Japan Society of Applied Physi. Source

Discover hidden collaborations