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Pointe-claire, Canada

Future Electronics Inc. is a distributor of electronic and electro-mechanical components headquartered in Pointe-Claire, Quebec. Founded in 1968 by reclusive billionaire Robert Miller, the company is one of Quebec's largest privately owned companies and is currently the fourth largest electronics distributor in the world. It operates in 169 locations in 42 countries in the Americas, Europe and Asia.Future Electronics also operates an Advanced Engineering Group of field applications engineers in several countries to assist circuit design engineers with product selection and engineering support.The company had in the past separated its operations into two complementary businesses, Future Global for large customers and Future Active/Industrial for small to mid-sized customers. In 2008, Future Global and FAI were combined into a single operation.In 2006 its estimated annual sales were over CAD $4.5 billion. Wikipedia.

Amano H.,Future Electronics
Progress in Crystal Growth and Characterization of Materials | Year: 2016

This article combines two papers, "Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation," Rev. Mod. Phys., 87 (2015) 1133, and "MOCVD of nitrides," Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683-704, 2015. For more detailed information, please read the two original papers. © 2016.

Biswas M.,West Bengal State University | Mandal A.,Future Electronics
Progress In Electromagnetics Research M | Year: 2010

A very simple and more efficient CAD model is proposed to demonstrate the effect on input impedance characteristics based on cavity model analysis for wide range of superstrate parameters and feed locations of an equilateral triangular microstrip patch antenna having different side lengths. The computed values are compared with different theoretical and experimental values available in open literature, showing close agreement. A Maxwell's equation solver is also used to validate our model.

Biswas M.,Jadavpur University | Mandal A.,Future Electronics
Microwave and Optical Technology Letters | Year: 2015

In this article, we present two models to predict the effective permittivity and effective patch length for computing the resonant frequency of superstrate loaded rectangular patch antenna. These models use a set of CAD oriented closed form expressions based on conformal mapping, transmission line and cavity model. These models are very simple and take less computational time. The accuracy of these models is verified against our new experimental results and previously reported experimental results available in open literature. To obtain the radiation characteristics and validate this structure electromagnetic software (HFSS) has been used. © 2015 Wiley Periodicals, Inc.

Biswas M.,Jadavpur University | Mandal A.,Future Electronics
Journal of Electromagnetic Waves and Applications | Year: 2015

In this article, we present two models to predict the quality factors for computing the impedance, bandwidth, and gain for a superstrate-loaded rectangular patch antenna. These models employ a set of CAD-oriented closed-form expressions based on conformal mapping, transmission line, cavity model, and single resonant parallel L-C-R circuit. These models are very simple and take less computational time. The accuracy of these models is verified against experimental results. This structure is also validated with the HFSS computation results. © 2015 Taylor & Francis.

The Integrated Evaluation Platform for SiC wafers and epitaxial films is established. It provides information about the correlation between step-bunching defects and SiO2/SiC electrical characteristics/reliability. The Observation-Recognition System discovers that the step bunching on the epitaxial wafer partly spreads along the scratches. The Qbd measured in the Electrical-Characteristics Analyses has three types of distribution denoted as D1 (ideal SiO2/SiC without defects), D2 (average Qbd value half of D1 with step bunching), and D3 (small Qbd value with large defects). The Defect-Structure Analyses elucidate that the oxide thickness fluctuates on the step bunching line. The local electric field concentration at thinner spots causes degradation of SiO2/SiC reliability. © The Electrochemical Society.

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