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Xie H.,Fujitsu Semiconductor Wireless Products Inc. | Oliaei O.,Fujitsu Semiconductor Wireless Products Inc. | Rakers P.,Fujitsu Semiconductor Wireless Products Inc. | Fernandez R.,Fujitsu Semiconductor Wireless Products Inc. | And 7 more authors.
IEEE Transactions on Microwave Theory and Techniques | Year: 2012

A single-chip multimode multiband receiver is designed and implemented in a 90-nm CMOS process for fourth-generation mobile platforms. The receiver includes nine primary low-noise amplifier (LNA) and five secondary LNA input ports, and supports long-term evolution (LTE)/WCDMA/ehanced general packet radio serve (EGPRS) standards for four gobal system for mobile communications bands, ten WCDMA bands, 14 frequency division duplex LTE band, and two time division duplex LTE bands. From antenna to RX digital signal processing output, the receiver achieves a typical 3-dB noise figure for all standards and bands. The RF front-end includes a matching network with 12-dB transducer gain, an inductively degenerated common-source LNA, passive mixers driven by a 25% duty-cycle local oscillate, and a current conveyor followed by a baseband filter. This receiver RF/analog front-end meets surface-acoustic-wave-less linearity requirements for all LTE/WCDMA bands and employs digital calibration to adjust the baseband low-pass filter cutoff frequency, mixer image rejection, second-order intermodulation intercept point performance and to perform in-phase/quadrature equalization. © 2012 IEEE. Source


Xie H.,Fujitsu Semiconductor Wireless Products Inc. | Rakers P.,Fujitsu Semiconductor Wireless Products Inc. | Fernandez R.,Fujitsu Semiconductor Wireless Products Inc. | McCain T.,Fujitsu Semiconductor Wireless Products Inc. | And 8 more authors.
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium | Year: 2011

A single-chip multi-mode multi-band saw-less 90nm CMOS receiver is designed and implemented for 4G mobile platform. It supports LTE/WCDMA/EGPRS standards and supports 4 GSM bands (GSM850, EGSM900, DCS1800, PCS1900), WCDMA (Bands I, II, III, IV, V, VI, VIII, IX, X and XI) and LTE (FDD Bands 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 17 and TDD bands 38 or 40). The receiver achieves a typical 3dB and maximum 4dB noise figure (NF) in all standards and bands. By using inductive source degeneration LNA architecture with 24dB passive matching voltage gain, the receiver radio frequency (RF)/analog front-end meets noise and linearity requirements for all modes and all bands with small power consumption. For example, the whole main receiver RF and analog blocks in band1 LTE 20MHz mode operate at 1.8V supply and draw total only 24mA current at maximum TX output power condition. It also automatically calibrates baseband low-pass filter cut-off frequency, mixer image rejection and IIP2 performance. © 2011 IEEE. Source

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