Fujimi Corporation

Tualatin, OR, United States

Fujimi Corporation

Tualatin, OR, United States

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Rader W.S.,Fujimi Corporation | Holt T.,Fujimi Corporation | Tamai K.,Fujimi Incorporated
Materials Research Society Symposium Proceedings | Year: 2010

Large particles in fumed silica dispersions were characterized by sedimentation, light scattering techniques, Transmission Electron Microscopy (TEM), and lacunarity. Applying centrifugation to fumed silica dispersions generated differences in sedimentation rates of large particles. The sedimentation rates of the large particles were affected by morphological differences and the particles remaining in the supernatant displayed buoyant behavior. The large particle morphology varied from branch like aggregates containing large primary particles to particles comprised of highly coalesced, tightly packed small primary particles. The results indicate the presence of different types of large particles in fumed silica dispersions to which conventional large particle characterization is unable to distinguish. © 2010 Materials Research Society.


Granstrom J.,Fujimi Corporation | Oonishi S.,Fujimi Incorporated | Tada M.,Fujimi Incorporated | Takeda H.,Fujimi Corporation
2015 International Conference on Planarization/CMP Technology, ICPT 2015 | Year: 2015

As device dimensions shrink, increasing efforts are made to reduce micro- and sub micro-scratches. Liquid particle count (LPC) has traditionally been used to quantify slurry particles that may cause scratch defects during the chemical mechanical planarization (CMP) process, with a subsequent reduction in wafer yield. However, LPC has historically had a limitation in that the method could only detect relatively large particles, typically > 0.5 μm. For future advanced (small) nodes, micron and sub micro-scratches may be generated by particles < 0.5 μm. In this paper, it will be demonstrated that particle size distribution (PSD) can be used as a more accurate metrology than LPC in predicting scratches. Furthermore, it will be demonstrated that PSD can be stabilized by the ingredients in the formulation. © 2015 American Vacuum Society.


Patent
Fujimi Incorporated and Fujimi Corporation | Date: 2014-02-05

The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below._(1) and X_(2) are each independently a hydrogen atom, a hydroxyl group, a carboxyl group, a phosphate group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polyphosphate group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group.


Tomozawa M.,Rensselaer Polytechnic Institute | Lezzi P.J.,Rensselaer Polytechnic Institute | Hepburn R.W.,Rensselaer Polytechnic Institute | Hepburn R.W.,Fujimi Corporation | And 2 more authors.
Journal of Non-Crystalline Solids | Year: 2012

Glass surfaces exhibit faster relaxation than the bulk at a constant temperature in the presence of either a liquid water or water vapor atmosphere. Permanent bending of glass fibers at temperatures lower than their glass transition temperatures in an atmosphere containing water vapor or in liquid water was attributed to and analyzed in terms of surface stress relaxation and the resulting surface residual stress. It was found that the fiber bending kinetics are controlled by water diffusion into the glass surface and that glasses with a faster transition crack velocity from region I (linear relation between logarithm of crack velocity and stress intensity factor) to the fatigue limit exhibited a faster rate of surface stress relaxation. It was suggested that this surface stress relaxation and resulting residual stress is the cause of various strengthening phenomena of glasses such as static fatigue limit and coaxing. © 2012 Elsevier B.V. All rights reserved.


McGarvey S.,CA Technologies | Miller A.E.,Fujimi Corporation
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

The methodology of Surface Scanning Inspection System (SSIS) for the Chemical Mechanical Polish (CMP) Process is to inspect the wafers on a SSIS and then subsequently perform a Defect Review SEM (DRS) review of the detected surface and subsurface anomalies. The subsequent defect review on a DRS allows for the classification of defects into discrete classification bins. The challenge of utilizing an automated DRSEM on micro and macro scratches resides in the accurate classification. When the DRSEM Field of View (FOV) is too large or too small, the defect(s) may be incorrectly classified into the incorrect defect classification bin. An exploration of the feasibility of utilizing the Hitachi LS9100 Surface Scanning Inspection System to automatically classify Chemical Mechanical Polishing induced scratches as a means of bypassing subsequent Defect Review Scanning Electron Microscope Automatic Defect Classification steps is evaluated as one of the key indices into the accelerated release of new slurry products from research and development into full manufacturing. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).


Asano H.,Fujimi Inc. | Yasui A.,Fujimi Inc. | Hirano T.,Fujimi Inc. | Tamai K.,Fujimi Inc. | Morinaga H.,Fujimi Inc.
Japanese Journal of Applied Physics | Year: 2011

The bald disappearance of barrier metal had been observed on the wafer after Cu chemical mechanical planarization (CMP) processing. It was speculated that this phenomenon occurs because the excessively oxidized Ta by electrochemical reaction with Cu ion was removed more easily than the normal Ta oxide around it. The inhibition of the electrochemical reaction is necessary to solve this phenomenon. © 2011 The Japan Society of Applied Physics.


Patent
Fujimi Inc. | Date: 2011-02-25

A polishing composition is disclosed containing a nonionic active agent with a molecular weight of 1,000 or more and less than 100,000 and an HLB value of not less than 17, a basic compound, and water. The nonionic active agent is preferably an oxyalkylene homopolymer or a copolymer of different oxyalkylenes. The polishing composition may further contain at least one of silicon dioxide and a water-soluble polymer. The polishing composition is used, for example, in polishing the surface of semiconductor substrates such as silicon wafers.


Lezzi P.J.,Rensselaer Polytechnic Institute | Tomozawa M.,Rensselaer Polytechnic Institute | Hepburn R.W.,Rensselaer Polytechnic Institute | Hepburn R.W.,Fujimi Corporation
Journal of Non-Crystalline Solids | Year: 2014

Recently, a new method of glass strengthening for silica glass fibers was proposed and demonstrated. The method involves the process of surface stress relaxation while the glass fiber is subjected to a tensile stress. Upon release of the applied tensile stress, the glass fiber acquires a residual surface compressive stress which can make the glass fiber stronger. The presence and magnitude of residual surface stress in the fibers were evaluated by observing the permanent bending of 1) fibers that were bent, heat-treated, and released, as well as 2) fibers that were heated while held under a uniaxial tensile stress, released, and then sliced. Direct observation of birefringence due to surface residual stress in the treated fibers was not possible due to the extremely thin surface layer of the residual stress. In this work, the previously evaluated magnitude of residual surface stress formed in silica fibers was confirmed by observing a shift of an IR reflection silica structural band after both bending and uniaxial tensile treatments at a temperature far below the glass transition temperature. © 2014 Elsevier B.V.

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