Tokyo, Japan
Tokyo, Japan

Fuji Electric Co., Ltd. , operating under the brand name FE, is a Japanese holding company that retains manufacturing companies of pressure transmitters, flowmeters, gas analyzers, controllers, inverters, pumps, generators, ICs, motors, and power equipment. Wikipedia.


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Patent
Fuji Electric Co. | Date: 2017-01-27

An exhaust gas processing apparatus that processes exhaust gas, including a reaction tower that includes an internal space extending in a height direction; a trunk tube that extends in the height direction in the internal space of the reaction tower and transports a liquid; and a plurality of branch tubes that are provided extending from an outer side surface of the trunk tube toward an inner side surface of the reaction tower, each include an ejecting section that ejects the liquid supplied from the trunk tube, and are provided at positions at different heights. Ejection regions of the liquid where the liquid is ejected from the respective ejecting sections of branch tubes that are adjacent in the height direction include a region in which the ejection regions partially overlap in an overhead view as seen from the height direction.


A method, for manufacturing a silicon carbide semiconductor device, includes: forming a silicon carbide epitaxial film on a silicon carbide substrate; flattening a surface of the epitaxial film by using chemical mechanical polishing such that the surface of the epitaxial film has an arithmetic mean roughness Ra of 0.3 nm or less; thermally oxidizing the surface of the epitaxial film to form a sacrificial oxide; removing the sacrificial oxide; and cleaning, by using deionized water, a surface of the epitaxial film exposed by the removing of the sacrificial oxide.


Patent
Fuji Electric Co. | Date: 2017-05-10

An exhaust gas processing apparatus that processes exhaust gas, including a reaction tower that includes an internal space extending in a height direction from a bottom portion side where the exhaust gas is introduced to a top portion side where the exhaust gas is emitted; a trunk tube that extends in the height direction in the internal space of the reaction tower and transports a liquid; and a plurality of branch tubes that are provided extending from an outer side surface of the trunk tube toward an inner side surface of the reaction tower, each include an ejecting section that ejects the liquid supplied from the trunk tube, and are provided at positions at different heights. Ejection regions of the liquid where the liquid is ejected from the respective ejecting sections of branch tubes that are adjacent in the height direction include a region in which the ejection regions partially overlap in an overhead view as seen from the height direction.


Patent
Fuji Electric Co. | Date: 2017-01-26

A semiconductor integrated circuit includes a first well region of a first conductivity type; a second well region of a second conductivity type provided in an upper part of the first well region; a current suppression layer of the first conductivity type provided in a lower part of the semiconductor substrate immediately below the first well region, separated from the first well region; and an isolation region of the second conductivity type provided in an upper part of the semiconductor substrate, separated from the first well region, a reference potential being applied to the isolation region. The semiconductor substrate is the second conductivity type.


Patent
Fuji Electric Co. | Date: 2017-01-26

A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.


Patent
Fuji Electric Co. | Date: 2017-01-30

A semiconductor device includes one or more trench gates extending in a first direction in plan view, one or more first-conductivity-type regions spaced away from each other in the first direction, where the first-conductivity-type regions are shallower than the trench gates, one or more second-conductivity-type regions alternating with the first-conductivity-type regions in the first direction, where the second-conductivity-type regions are shallower than the trench gates and deeper than the first-conductivity-type regions, and a second-conductivity-type trench spacer region spaced away from the one or more trench gates, where the trench spacer region has a higher concentration than the second-conductivity-type regions. Here, the trench spacer region is positioned within the first-conductivity-type regions in plan view and closer to a back surface of the semiconductor device than the first-conductivity-type regions are.


Patent
Fuji Electric Co. | Date: 2017-01-27

A reference voltage generation circuit includes a voltage dividing circuit, a transistor, and a capacitor. The voltage dividing circuit divides a power-supply voltage into a specified level to generate a predetermined voltage. The transistor has a gate applied with the predetermined voltage and a drain outputting, as a reference voltage, a voltage obtained by adding the predetermined voltage and a threshold voltage of the transistor. The capacitor bypasses the gate and source of the transistor. Moreover, one end of the capacitor is connected to the gate of the transistor, and the other end of the capacitor is connected to the source of the transistor and ground. Furthermore, an electric charge output source which outputs an electric charge is connected to the drain of the transistor.


Patent
Fuji Electric Co. | Date: 2017-01-10

A switching power-supply device includes an input power detecting part that finds a DC input power from a detected DC input voltage and a detected DC input current, and an operation mode setting part that sets a burst mode operation or a continuous mode operation based on the DC power detected by the input power detecting part. The operation mode setting part also may set a ratio of a switching active period Tact, in which the main switching element is caused to perform switching operations, to a switching stop period Tstop, in which the switching operations are stopped, in the case of the burst mode operation in accordance with the detected input power.


An object of the present invention is to achieve stable operation by supplying an appropriate amount of seawater to a scrubber in such a manner that the sulfur oxide concentration in the exhaust gas after processing does not exceed a limit value, and to reduce the measurement frequency of the alkalinity. The amount-of-seawater control device for a scrubber includes: a minimum-amount-of-seawater converter (61) which calculates a minimum amount of seawater which is a minimum amount of seawater necessary for an absorption reaction of the sulfur oxide by the seawater, from an engine output and a sulfur content of fuel oil; an amount-of-seawater correction converter (68) which calculates a corrected amount of seawater which is an amount of seawater at which the sulfur oxide contained in the exhaust gas discharged from the scrubber is equal to or less than a set value; a summing element (69) which calculates a set amount of seawater by summing the minimum amount of seawater and the corrected amount of seawater; a pump control device (70) which implements control such that seawater corresponding to the set seawater amount is supplied to the scrubber; and an alkalinity setting device (81) which sets the alkalinity of the seawater in accordance with traveled waters. The amount of seawater supplied to the scrubber is adjusted on the basis of the alkalinity.


Patent
In & Co Systems and Fuji Electric Co. | Date: 2017-05-24

Provided is an electromagnetic switch that can simultaneously drive a main contact mechanism and auxiliary contact mechanisms, and a contact position regulating method thereof. A main contact housing portion (6) that houses a main contact mechanism having a pair of fixed contacts (11a), (11b) fixedly disposed maintaining a predetermined interval and a movable contact (12) disposed so as to be connectable to and detachable from the pair of fixed contacts in a contact housing case (4), an auxiliary contact housing portion (7) that houses two or more auxiliary contact mechanisms (34A), (34B) having fixed contacts and movable contacts disposed so as to be connectable to and detachable from the fixed contacts, and an electromagnet unit (3) that moves the movable contact of the main contact mechanism and the movable contacts of the auxiliary contact mechanisms, are disposed in series.

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