Fudan University , located in Shanghai, China, is one of the oldest and most selective universities in China, and a member in the C9 League and Universitas 21. Its institutional predecessor was founded in 1905, shortly before the end of China's imperial Qing dynasty. Fudan is now composed of four campuses, including Handan , Fenglin , Zhangjiang , and Jiangwan . Wikipedia.
Xiong H.-M.,Fudan University
Advanced Materials | Year: 2013
The last decade has seen significant achievements in biomedical diagnosis and therapy at the levels of cells and molecules. Nanoparticles with luminescent or magnetic properties are used as detection probes and drug carriers, both in vitro and in vivo. ZnO nanoparticles, due to their good biocompatibility and low cost, have shown promising potential in bioimaging and drug delivery. The recent exciting progress on the biomedical applications of ZnO-based nanomaterials is reviewed here, along with discussions on the advantages and limitations of these advanced materials and suggestions for improving methods. ZnO nanoparticles can be used in bioimaging probes and drug carriers. The major highlights of recent progress in these applications are reviewed. Multifunctional probes can be synthesized for curing animal tumors, which contain luminescent ZnO quantum dots. ZnO nanoparticles can also be used to produce probes with magnetic elements for anticancer drugs or with specific groups for identifying tumors, allowing the nanoparticle to be guided to cancerous cells. Under UV light irradiation, ZnO nanoparticles can produce plenty of reactive oxygen species which help destroy cancer cells. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source
Fudan University | Date: 2014-04-29
The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate. The semi-floating-gate device disclosed in the disclosure using the floating gate to store information and realizing charging or discharging of the floating gate through a gated p-n junction diode boasts small unit area, high chip density, low operating voltage in data storage and strong ability in data retain.
Fudan University | Date: 2014-03-25
The present disclosure relates to the technical field of radio frequency power devices, and more specifically, to a radio frequency power device for implementing the self-position alignment of asymmetric source, drain and gate and the production method thereof. In the radio frequency power device for implementing asymmetric self-alignment of the source, drain and gate according to the present disclosure, gate sidewalls are utilized to implement the self-position alignment of the source, drain and gate, thereby reducing parameter drift of products; besides, the source and drain of the device can be formed by the alloying process, the iron implanting process or epitaxy process after formation of the gate since the gate is protected by the passivating layer, featuring a simple technological process while reducing the parasitic source-drain resistances and enhancing the electrical properties of the radio is frequency power device.
Fudan University | Date: 2015-01-20
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
Fudan University | Date: 2014-03-24
The present disclosure belongs to the technical field of radio frequency power devices, and more specifically, to a high electron mobility device based on the gate-first process and the production method thereof. The high electro mobility device is made by adopting the gate-first process according to the present disclosure, wherein gate dielectric sidewalls are utilized to implement the self-alignment of the gate and source; besides, the source and drain of the device can be formed directly by use of the alloying process, the iron implanting process or epitaxy process after formation of the gate since the gate is protected by the passivating layer, featuring a simple technological process while reducing parameter shift of products and enhancing the electrical properties of high electron mobility devices.