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Leong H.Y.,University of Tenaga Nasional | Yap B.K.,University of Tenaga Nasional | Khan N.,Fresscale Semiconductor Malaysia SDN BHD | Ibrahim M.R.,Fresscale Semiconductor Malaysia SDN BHD | And 2 more authors.
Materials Research Innovations | Year: 2014

Insulated Cu wire technology offers potential solutions for fine and ultra-fine pitch wire bonding as the insulator coating on the bare wire prevents wires shorting problem. Most previous works focused on insulated wire stitch bonding. This paper presents a comparison study between insulated Cu and bare Cu wire ball-bonding process characterisation in the standpoints of free air ball formation, Al splash, hardness, ball bond strength and intermetallic growth at the bond interface study. Spherical and clean free air ball was formed using lower electric flame off energy compared to bare Cu wire. The study shows that insulated Cu bonding demonstrated comparable equivalent ball bond strength to bare Cu wire bonding at T0 and even after subjected to isothermal aging 175°C up to 1008 hours. Intermetallic formation was uniform at the bond interface for both wires. Insulated Cu wire demonstrates good bondability and reliability performance, suitable for fine pitch wire bonding in large-scale integration applications. © 2014 W. S. Maney & Son Ltd. Source

Kid W.B.,University of Tenaga Nasional | Leng E.P.,Fresscale Semiconductor Malaysia SDN BHD | Yong C.C.,Fresscale Semiconductor Malaysia SDN BHD | Yi O.X.,University of Tenaga Nasional | Kar Y.B.,University of Tenaga Nasional
2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts | Year: 2011

Gold wires are commonly used for wire-bonding and it fits well the industrial requirements. However, the price of Gold wires increasing significantly, Copper wires is a potential replacement for Gold due to their superior electrical and mechanical properties. In order to incorporate Cu in the wire-bonding process, substantial data regarding aging and intermetallic formation of Cu-Al bonds is required and the results are compared with Au samples. In this study, the bond integrity and thermal aging of Cu-Al and Au-Al wire-bonds were investigated. The Copper and Gold wire-bonds samples were heat-treated at temperature of 225°C for 4.5, 13.5, 26, 52 and 97 hours respectively. The intermetallics of the wire-bonds, and in particular the Al-Cu interface, were studied. Discontinuous and non-uniform of Cu-Al intermetallics regions were found in the thermal aging samples. The thickness of Cu-Al intermetallics is growing linearly with the temperature as the diffusion rate increases in higher temperature. The Cu-Al bond is weak compare to Au-Al in accordance with aging through wire pull test. © 2011 IEEE. Source

Wong B.K.,University of Tenaga Nasional | Yong C.C.,Fresscale Semiconductor Malaysia SDN BHD | Eu P.L.,Fresscale Semiconductor Malaysia SDN BHD | Yap B.K.,University of Tenaga Nasional
International Conference on Electronic Devices, Systems, and Applications | Year: 2011

With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, wire pull, ball shear and number of metal lift/peeling and ball lift after wire pull) are affecting bonding quality. Design of experiment and response of surface were used to optimize the bonding parameters. The wire pull and ball shear test at three thermal aging read points were studied. © 2011 IEEE. Source

Aziz A.A.,Fresscale Semiconductor Malaysia SDN BHD | Danaher F.,Fresscale Semiconductor Malaysia SDN BHD
Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium | Year: 2015

Year 2013 demonstrated a considerable manufacturing challenges to enable the roll out of RF 4G systems. The popularity of utilizing the High chip capacitor for increased VBW tested the resources for both RF assembly in Freescale and the chip manufacturer and subcontractors associated with chip capacitor production. It was demonstrated that the existing chip capacitor device, while designed well, required several enhancements to increase final product assembly quality while reducing the significant CLC footprint. The initial chip capacitor design utilized a standardized ceramic build process needed plating format which in the long run contributed to chip shorting at final assembly due to the existing chip capacitor prone to get solder short and supplier not able to provide consistent solder pattern. To remedy this design, the chip cap processing was radically redefined to produce a chip cap with reverse electrodes and an in-house solder foil process. To date, the new capacitor has been introduced in over a dozen RF products and is being utilized in significant run rates to produce the higher margins needed in this competitive environment. © 2014 IEEE. Source

Leong H.,University of Tenaga Nasional | Yap B.,University of Tenaga Nasional | Khan N.,Fresscale Semiconductor Malaysia SDN BHD | Ibrahim M.R.,Fresscale Semiconductor Malaysia SDN BHD | Tan L.C.,Fresscale Semiconductor Malaysia SDN BHD
Microelectronics Reliability | Year: 2014

Insulated Cu wire technology has immense potential for fine pitch wire bonding interconnection. Understanding the behavior of the insulated Cu free air ball (FAB) formation is crucial for wire bonding process. The FAB formation, size, shape and cleanliness under different conditions for 20 μm insulated Cu wire were investigated using SEM, FESEM and FTIR surface analysis. The results were compared with that of bare Cu wire. Consistently spherical residue free FAB of insulated Cu wire were formed using forming gas. The samples with insulated Cu wire consistently produced larger FAB than that of bare Cu wire, indicating that the energy required for free air ball formation is lower. Basic bonding performances in terms of ball bond strength, intermetallic (IMC) coverage growth and stitch bond strength of insulated Cu wire at time zero are also discussed in the paper. © 2014 Elsevier Ltd. All rights. Source

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