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Cairo, Egypt

The French University in Egypt . Established in 2002 in cooperation with the Paris III: Sorbonne University, the Nantes University, Haute Alsace University and the Corse University.A convention with Paris VI University concerning the engineering school was also signed.The university is located in El-Shorouk city, 37 km from the center of Cairo.The university uses French , English and Arabic languages in teaching, and its graduates are able to use these three languages in any work domain related to their specialization. Wikipedia.


Kirah K.,French University of Egypt
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

We have simulated a photovoltaic (PV) pn junction where a texturing structure from Silicon nanowires (NWs) is added. While the NWs diameter was kept constant at a value of 100 nm, their lengths were varied over the range from 1 μm to 100 μm. A noticeable enhancement in the device efficiency is found. This improvement is due to that the added texture has significantly decreased the optical reflectance and increased the optical absorption of the surface. © 2013 SPIE.


Kirah K.,French University of Egypt
Electronics Letters | Year: 2012

The stress-induced leakage current (SILC) in short-channel n-MOSFETs is calculated based on a previously developed model for the steady-state component of SILC across the ultra-thin gate oxide of a MOS capacitor. It is found that the contribution of the component due to SILC in the gate current of MOSFETs must not be neglected. It is also found that SILC is larger in the source side than in the drain side. © 2012 The Institution of Engineering and Technology.


Orjubin G.,French University of Egypt | Wong M.-F.,Orange S.A.
Annales des Telecommunications/Annals of Telecommunications | Year: 2011

Reverberation chamber (RC), in which a complex electromagnetic environment is created, is of great interest as a versatile test and measurement tool, and its performance is conveniently evaluated through the field statistics. Following a previous paper in which the generalized extreme value (GEV) distribution was proposed to model the maximum field inside an RC, this work presents an experimental validation of the GEV use for the overmoded RC. The electric field is measured with a small sensor for a large number of points inside the RC, and the GEV parameters are accurately estimated. Since the maximum field distribution for this overmoded RC is found to be of reverse Weibull type, the field distribution is right bounded by a higher level that can be determined. © 2011 Institut Télécom and Springer-Verlag.


Zakhary S.,University of Nottingham | Radenkovic M.,University of Nottingham | Benslimane A.,University of Avignon | Benslimane A.,French University of Egypt
IEEE Transactions on Vehicular Technology | Year: 2014

This paper proposes a novel fully distributed and collaborative k-anonymity protocol (LPAF) to protect users' location information and ensure better privacy while forwarding queries/replies to/from untrusted location-based service (LBS) over opportunistic mobile networks (OppMNets). We utilize a lightweight multihop Markov-based stochastic model for location prediction to guide queries toward the LBS's location and to reduce required resources in terms of retransmission overheads. We develop a formal analytical model and present theoretical analysis and simulation of the proposed protocol performance. We further validate our results by performing extensive simulation experiments over a pseudorealistic city map using map-based mobility models and using real-world data trace to compare LPAF to existing location privacy and benchmark protocols. We show that LPAF manages to keep higher privacy levels in terms of k-anonymity and quality of service in terms of success ratio and delay, as compared with other protocols, while maintaining lower overheads. Simulation results show that LPAF achieves up to an 11% improvement in success ratio for pseudorealistic scenarios, whereas real-world data trace experiments show up to a 24% improvement with a slight increase in the average delay. © 2013 IEEE.


Abdellatif S.,The British University in Egypt | Kirah K.,French University of Egypt
Energy Procedia | Year: 2013

A numerical model for a vertical-aligned nanowire (NW) radial p-i-n junction-based photovoltaic (PV) device is presented. The fill factor, the power conversion efficiency, the optimum device length, radius and doping level are calculated using a simulator built on the commercial package Comsol Multiphysics only. The sensitivity of the Si nanowire to temperature variations is also investigated. The results are found to be in accordance with the available experimental measurements. © 2013 The Authors Ltd.

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