Gif - sur - Yvette, France
Gif - sur - Yvette, France

The Commissariat à l'énergie atomique et aux énergies alternatives or CEA, is a French public government-funded research organisation in the areas of energy, defense and security, information technologies and health technologies. The CEA maintains a cross-disciplinary culture of engineers and researchers, building on the synergies between fundamental and technological research Wikipedia.


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Patent
French Atomic Energy Commission | Date: 2017-03-22

The present invention pertains to a novel treatment of renal cell carcinoma and other a solid tumors which harbor a VHL inactivation, based on the combination of a first agent inhibiting a protein kinase CK2 (CK2) and a second agent inhibiting an Ataxia Telangiectasia Mutated (ATM) kinase.


Patent
French Atomic Energy Commission | Date: 2017-01-04

The invention relates to a fluid flow velocity sensor using a differential pressure measurement and comprising a stack (200) having a tip (230) pointing in a first direction, said stack comprising first and second plates (210A-210B) arranged in parallel one another along the first direction; and a pressure-sensitive diaphragm (220) arranged between the first and second plates (210A-210B) along the first direction, said pressure-sensitive diaphragm (220) being spaced apart from the first plate (210A) by a first cavity and from the second plate (210B) by a second cavity, wherein the first cavity is entirely sealed, except at the tip (230) of the stack, so as to be under a stagnation pressure during operation of the fluid flow velocity sensor, and wherein the second cavity is opened so as to be under a reference pressure during operation of the fluid flow velocity sensor. The fluid flow velocity sensor further comprises a detector configured to measure a parameter representative of the differential pressure between the first and the second cavities.


An electrochemically actuatable electronic component comprises: a substrate; at least one first and one second actuating electrodes; at least one first and one second measuring electrodes; at least one storing electrode configured to free ions under the action of the actuating electrodes; at least one ionic conductor able to conduct the ions and that is located in a region placed between the measuring electrodes; a device suitable for: applying a voltage or a current between the first and second actuating electrodes to allow the migration of ions from the storing electrode to the first actuating electrode forming thereon an electrochemical deposition through the ionic conductor and for measuring, between the first and second measuring electrodes, a modification of at least one characteristic of the region placed between the first and second measuring electrodes, to determine at least one characteristic of the electronic component.


Patent
French Atomic Energy Commission | Date: 2016-11-08

Device for modulating the intensity of an optical signal on four levels, this device comprising:


Method of making a transistor with semiconducting nanowires, including:


Patent
French Atomic Energy Commission | Date: 2016-11-10

A method for manufacturing a PCRAM memory includes forming in a first dielectric layer arranged on a substrate, which includes bottom electrodes, a first rectilinear trench opening onto the set of electrodes; depositing a first active layer in the first trench, such that the first active layer is in electrical contact with the electrodes; covering the first active layer with a second dielectric layer; etching, in the second and second dielectric layers and the first active layer, additional rectilinear trenches oriented perpendicularly to the first trench, to obtain a group of memory devices each including a portion of the first active layer in electrical contact with one of the electrodes; filling the additional trenches with a sacrificial dielectric material; performing an anisotropic etching of the sacrificial material to expose a side surface of each portion of the first active layer; and covering the side surface with a second active layer.


Patent
French Atomic Energy Commission | Date: 2016-11-15

An electrochemical cell includes a membrane electrode assembly and a bipolar plate. The membrane electrode assembly includes a proton exchange membrane and first and second electrodes. The bipolar plate includes conductive sheets, coolant flow channels are made between the conductive sheets. An outer face of a conductive sheet includes reactant flow channels and a first rib extending on the side of the reactant flow channels. A gasket extends on the first rib. The bipolar plate includes an intermediate zone extending between the first rib and the first electrode, a first band in which the sheets have complementary shapes nested one in the other over the entire length of a coolant flow channel, and a second band in which a sheet includes reliefs in contact with the membrane electrode assembly.


Patent
French Atomic Energy Commission | Date: 2016-11-15

A bipolar plate, including conductive sheets. An outer face of one of the conductive sheets includes first ribs, a second rib, and third ribs. The first ribs delimit fuel flow channels and the second rib extends on the side of the reactant flow channels, on which a gasket extends. Between a first rib and the second rib, the third ribs extend and an alternation of third ribs and of indentations is formed. The height between the third ribs and the indentations are at least equal to 75% of the total height of the flow channels. An outer face of the other of the conductive sheets includes fourth ribs and fifth ribs. The fourth ribs delimit oxidant flow channels. The fifth rib extends plumb with the second rib and a gasket extends along the fifth rib.


Patent
French Atomic Energy Commission | Date: 2016-11-15

A bipolar plate, including conductive sheets, and in which flow channels are made between the conductive sheets and are in communication with a coolant inlet and outlet manifolds. An outer face of a conductive sheet includes first ribs delimiting reactant flow channels, and a second rib extending on the side of the reactant flow channels. A sealing gasket extends at least partially on the second rib. The outer face of the conductive sheet further includes third ribs extending between a first rib and the second rib, between which an alternation of third ribs and of indentation is formed. The sheets are in contact at the level of indentations, and respective passages are formed under the third ribs.


Patent
French Atomic Energy Commission, STMicroelectronics and ST Microelectronics Crolles 2 SAS | Date: 2016-11-11

A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

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