Freescale Inc. | Date: 2013-08-30
A process integration is disclosed for fabricating non-volatile memory (NVM) cells having spacer control gates (
Freescale Inc. | Date: 2012-05-25
Embodiments include methods for forming an electrostatic discharge (ESD) protection device coupled across input-output (I/O) and common terminals of a core circuit, where the ESD protection device includes first and second merged bipolar transistors. A base of the first transistor serves as collector of the second transistor and the base of the second transistor serves as collector of the first transistor, the bases having, respectively, first and second widths. A first resistance is coupled between an emitter and base of the first transistor and a second resistance is coupled between an emitter and base of the second transistor. ESD trigger voltage Vt1 and holding voltage Vh can be independently optimized by choosing appropriate base widths and resistances. By increasing Vh to approximately equal Vt1, the ESD protection is more robust, especially for applications with narrow design windows, for example, with operating voltage close to the degradation voltage.
Freescale Inc. | Date: 2015-12-11
A method of fabricating a laterally diffused metal-oxide-semiconductor (LDMOS) transistor device having a bipolar transistor for electrostatic discharge (ESD) protection includes doping a substrate to form a body region of the LDMOS transistor device in the substrate, the body region having a first conductivity type, forming a doped isolating region of the LDMOS transistor device in the substrate, the doped isolating region having a second conductivity type and surrounding a device area of the LDMOS transistor device in which the body region is disposed, forming a base contact region of the bipolar transistor, the base contact region being disposed within the body region and having the first conductivity type, and doping the substrate to form an isolation contact region for the doped isolating region that defines a collector region of the bipolar transistor, to form source and drain regions of the LDMOS transistor device in the substrate, and to form an emitter region of the bipolar transistor within the body region.
Freescale Inc. | Date: 2013-03-15
A power source delivers power from a main power source using switching by a normally on transistor. A driver switches on and off the normally on transistor under a control signal by a controller during regular operation. A housekeeping power supply delivers auxiliary power to the driver. The driver switches off the normally on transistor during irregular operation. Irregular operation occurs at least when the control signal is absent or no auxiliary power is available or during transients such a power up or down. Bridge block pairs thereof can be arranged to form a half bridge power switch, an H bridge switch, a three phase bridge switch, a multi-phase switch, a buck converter, a buck-boost converter, or a boost converter.
Freescale Inc. | Date: 2013-08-08
A process integration is disclosed for fabricating non-volatile memory (NVM) cells having recessed control gates (