Time filter

Source Type

Bonea A.,Polytechnic University of Bucharest | Bonfert D.,Fraunhofer Research Institution for Modular Solid State Technologies FhG EMFT | Svasta P.,Polytechnic University of Bucharest
Proceedings of the International Spring Seminar on Electronics Technology | Year: 2011

The paper aims to describe the simulations and measurements performed in order to determine the resistance of source and drain contacts of organic transistors with Polytriarylamine (PTAA) semiconductor. PSpice and MATLAB comparative simulations based on the analytic model are performed. The DC Sweep and parametric simulations are employed to find the electrical characteristics of the transistors, in order obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This technique uses transistor-like structures of various channel lengths, as these have a layout suitable for extracting and assessing the contact resistance. The TLM structures considered are bottom contact bottom gate transistors with interdigitated electrodes of various channel lengths, their geometry assumed to ensure similar values for the drain and source resistances due to the symmetry. This paper approaches the aspects related to the electrical simulation of basic transistor models in comparison to the measurements. © 2011 IEEE.


Bonea A.,Polytechnic University of Bucharest | Bonfert D.,Fraunhofer Research Institution for Modular Solid State Technologies FhG EMFT | Busu I.,Polytechnic University of Bucharest | Svasta P.,Polytechnic University of Bucharest
Proceedings of the International Spring Seminar on Electronics Technology | Year: 2012

The paper aims to assess how the geometry of the organic thin film transistors (OTFTs) influences their electrical parameters. The transistors have polytriarylamine (PTAA) as semiconductor. Several geometries will be investigated for transistors fabricated in a single batch. These geometries include simple electrodes, inter-digitated electrodes and circular electrodes. The electrical parameters considered are threshold voltage, mobility, ON-OFF ratio, the sub-threshold swing and the contact resistance. All the measurements are performed with a calibrated semiconductor analyzer in accordance to the IEEE 1620 standard. The paper discusses the trade-off between the ease of fabrication and the increase in performance of these devices. © 2012 IEEE.


Busu I.,Polytechnic University of Bucharest | Bonea A.,Polytechnic University of Bucharest | Svasta P.,Polytechnic University of Bucharest | Bonfert D.,Fraunhofer Research Institution for Modular Solid State Technologies FhG EMFT
2011 IEEE 17th International Symposium for Design and Technology of Electronics Packages, SIITME 2011 - Conference Proceedings | Year: 2011

The paper investigates the influence of channel geometry over the source-drain current in organic field effect transistors. TIPS Pentacene was the organic semiconductor used due to its increased carrier mobility. For this experiment the devices were fabricated in the same lot and in the same technological process, and in this condition the only variable is the length of the channel. All the measurements were made in the same condition closely following the IEEE 1620 standard. © 2011 IEEE.

Loading Fraunhofer Research Institution for Modular Solid State Technologies FhG EMFT collaborators
Loading Fraunhofer Research Institution for Modular Solid State Technologies FhG EMFT collaborators