Fraunhofer Research Institution for Electronic Nano Systems

Chemnitz, Germany

Fraunhofer Research Institution for Electronic Nano Systems

Chemnitz, Germany
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Marjanovlc N.,Fraunhofer Research Institution for Electronic Nano Systems | Marjanovlc N.,Johannes Kepler University | Hammerschmidt J.,TU Chemnitz | Farnsworth S.,NovaCentrix | And 7 more authors.
International Conference on Digital Printing Technologies | Year: 2010

The ink-jet printing technology is one of the most promising alternatives to photolithographic and masking technology allowing additive patterning of functional materials such as conductors, insulators, and semiconductors on a substrate. This approach enables the fabrication of cost-effective electronics. In particular, printable amorphous oxides have some advantages compared to other solution processable organic materials like atmospheric and temperature stability and relatively high field- effect mobility, which make them competitive candidates to be integrated in functional devices and smart systems. Here we report on the fabrication of basic electronic building blocks (e.g. a diode, resistor, capacitor) based on ink-jet printed amorphous oxides and metal contacts as active and passive device layers. Printed components are based on originally synthesized amorphous semiconductive oxides and metallic inks. After printing, low temperature sintering method developed by NovaCentrix® (PulseForge®) was performed in order to form the device active and passive layers. This was accomplished by using proprietary high-intensity flash lamps at very short pulse durations allowing us to use a low-cost Polyethylene terephthalate (PET) plastic film as the substrate material. Obtained results may open novel routes for the development of a next generation of Large Area Printed Electronics based on printed amorphous oxides.


Boettge B.,Fraunhofer Institute for Mechanics of Materials | Braeuer J.,Fraunhofer Research Institution for Electronic Nano Systems | Wiemer M.,Fraunhofer Research Institution for Electronic Nano Systems | Petzold M.,Fraunhofer Institute for Mechanics of Materials | And 2 more authors.
Journal of Micromechanics and Microengineering | Year: 2010

Reactive bonding is a still new low-temperature joining process that is based on reactive nanoscale multilayer systems. The heat required for the bonding process is generated by a self-propagating exothermic reaction within the multilayer system while the adhesive interconnect is supported by solder films. For microsystem applications, the approach is particularly useful if temperature-sensitive components and materials with high differences in coefficient of thermal expansion have to be joined. In this paper, this is successfully demonstrated for bonding a quartz strain gauge onto a stainless steel membrane and an IR-emitter onto a covar socket by using commercially available nickel/aluminum NanoFoils©. The quality of the bond interface of both demonstrators was investigated by scanning electron microscopy and the strength was determined by a tensile test. On the other hand, integrated microsystem applications beyond die attachment require patterned bond structures, e.g. to form bond frames. Thus, alternative materials were additionally considered that can be directly deposited on silicon substrates by magnetron sputtering, such as aluminum/titanium as well as titanium/amorphous silicon (Ti/a-Si) bilayer systems. The properties of these basic multilayer systems and their reaction products were characterized by differential scanning calorimetry and high-resolution electron microscopy. It is shown that specifically the Ti/a-Si system has substantial potential for direct microsystem technology integration provided the remaining open technological issues can be addressed during future research. In general, the results obtained in this study demonstrate the high potential of the reactive bonding process as a new advantageous assembly technology for the fabrication of future microsystems. © 2010 IOP Publishing Ltd.


Akiba A.,Sony Corporation | Mitarai S.,Sony Corporation | Morita S.,Sony Corporation | Ikeda K.,Sony Corporation | And 6 more authors.
Technical Digest - International Electron Devices Meeting, IEDM | Year: 2010

A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 μm thick Al wires and 12 μm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies. ©2010 IEEE.


Zong Z.,Xi'an Jiaotong University | Mohammadzadeh S.,TU Chemnitz | Cao Y.,Xi'an Jiaotong University | Qiu Z.,Xi'an Jiaotong University | And 5 more authors.
Microelectronic Engineering | Year: 2010

The size effect of copper interconnect in nanoscale based on various scattering mechanisms including surface roughness reflection, surface electron-phonon scattering, grain boundary and background scattering is studied theoretically using Monte Carlo method as a statistical solution to Boltzmann Transport Equation. Surface phonon dispersion and corresponding scattering probability are calculated from first principle calculations based on density functional perturbation theory. The performed simulation to investigate the influence of linewidth on resistivity shows a good agreement with published experimental results. A comparison of the resistivity behaviour of quasi elastic and inelastic surface model reveals surface electron-phonon scattering is an effective energy-loss channel of electrons. © 2009 Elsevier B.V. All rights reserved.


Nowack M.,TU Chemnitz | Reuter D.,TU Chemnitz | Reuter D.,Fraunhofer Research Institution for Electronic Nano Systems | Bertz A.,TU Chemnitz | And 5 more authors.
Proceedings of IEEE Sensors | Year: 2010

We present a novel micromachining approach for onchip three-axis capacitive high aspect ratio acceleration sensors made from standard silicon wafers. The patented AIM (air gap insulated microstructures) technology with their excellent device properties regarding temperature behavior, capacitive sensitivity and reliability was modified for enabling out-of-plane differential measurements. Therefore electrodes with different heights have been patterned by using one additional masking layer. Using the presented AIM technology, high performance vibration sensors with low temperature sensitivity of typically 40 to 110 ppm/K sensitivity change and ± 0.9 mg/K offset failure at a sensitivity of 10 fF/g (25 fF/g for in-plane sensors), a measurement range of ± 50 g and a bandwidth from DC to 1 kHz were fabricated. The sensors have been packaged hermetically by seal glass bonding. ©2010 IEEE.


Zienert A.,TU Chemnitz | Schuster J.,Fraunhofer Research Institution for Electronic Nano Systems | Streiter R.,TU Chemnitz | Streiter R.,Fraunhofer Research Institution for Electronic Nano Systems | And 2 more authors.
2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 | Year: 2011

In the present work we study electronic transport properties of finite length single-wall carbon nanotubes. A simple model is used to describe the electrodes and the way they are attached to both ends of the CNT. Electronic transport calculations are carried out on three different levels of sophistication. Those are single orbital tight-binding, extended Hckel and density functional theory in combination with Greens function methods. Results are compared and discussed. © 2011 IEEE.


Zienert A.,TU Chemnitz | Schuster J.,Fraunhofer Research Institution for Electronic Nano Systems | Streiter R.,TU Chemnitz | Streiter R.,Fraunhofer Research Institution for Electronic Nano Systems | And 2 more authors.
Physica Status Solidi (B) Basic Research | Year: 2010

We present electronic transport calculations for single wall carbon nanotubes (CNTs) using two highly idealized models to describe the electrodes and their contact to the CNT. In the first model we use CNT-electrodes and in the second one we apply the wide-band approximation, neglecting any atomic structure within the electrodes. The single orbital tight-binding approximation is used to describe the electronic structure of the CNTs. This enables us to apply highly efficient decimation techniques to reduce the size of the finite central Hamiltonian. Semi-infinite CNT-electrodes can be included iteratively using a similar method. Electronic transport calculations are carried out within the Landauer formalism. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Gessner T.,Fraunhofer Research Institution for Electronic Nano Systems | Gessner T.,TU Chemnitz | Vogel M.,Fraunhofer Research Institution for Electronic Nano Systems | Hiller K.,TU Chemnitz | And 3 more authors.
ECS Transactions | Year: 2010

As a result of the growing complexity and miniaturization of innovative products systems integration is becoming more and more important for scientific and technical development. The micro and nano system technologies as well as electronics are playing a key role in today's product development and industrial progress. They enable the integration of mechanical, electrical, optical, chemical, biological and other functions into a very small space with dimensions ranging from sub micrometers up to some millimeters. This paper presents three examples of MEMS sensors developed at Fraunhofer ENAS and Chemnitz University of Technology and the approaches for their integration into smart systems. The first one is an active radio frequency identification label for the monitoring of shock, inclination and temperature during transportation processes. A MEMS spectrometer and gyroscopes will be demonstrated. Special emphasis is given to MEMS/nanointegration. ©The Electrochemical Society.


Otto T.,Fraunhofer Research Institution for Electronic Nano Systems | Saupe R.,Fraunhofer Research Institution for Electronic Nano Systems | Stock V.,TQ Systems Chemnitz GmbH | Gessner T.,Fraunhofer Research Institution for Electronic Nano Systems | Gessner T.,TU Chemnitz
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

Contactless measurement of temperatures has gained enormous significance in many application fields, ranging from climate protection over quality control to object recognition in public places or military objects. Thereby measurement of linear or spatially temperature distribution is often necessary. For this purposes mostly thermographic cameras or motor driven temperature scanners are used today. Both are relatively expensive and the motor drive devices are limited regarding to the scanning rate additionally. An economic alternative are temperature scanner devices based on micro mirrors. The micro mirror, attached in a simple optical setup, reflects the emitted radiation from the observed heat onto an adapted detector. A line scan of the target object is obtained by periodic deflection of the micro scanner. Planar temperature distribution will be achieved by perpendicularly moving the target object or the scanner device. Using Planck radiation law the temperature of the object is calculated. The device can be adapted to different temperature ranges and resolution by using different detectors - cooled or uncooled - and parameterized scanner parameters. With the basic configuration 40 spatially distributed measuring points can be determined with temperatures in a range from 350°C - 1000°C. The achieved miniaturization of such scanners permits the employment in complex plants with high building density or in direct proximity to the measuring point. The price advantage enables a lot of applications, especially new application in the low-price market segment This paper shows principle, setup and application of a temperature measurement system based on micro scanners working in the near infrared range. Packaging issues and measurement results will be discussed as well. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Kaynak M.,Ihp Microelectronics | Wietstruck M.,Ihp Microelectronics | Zhang W.,Ihp Microelectronics | Drews J.,Ihp Microelectronics | And 12 more authors.
IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition | Year: 2011

The latest developments in RF-MEMS technology have paved the way for achieving high performance systems. Integration of MEMS modules into a BiCMOS process using an embedded solution is appearing to be the most promising one to enable the realization of fully integrated smart systems. This work gives an overview on different RF-MEMS modules integrated to a 0.25μm SiGe BiCMOS process. Back-end-of-line (BEOL) Integration, Substrate-Etch and Above-IC modules for mm-wave applications are detailed by different MEMS device examples. © 2011 IEEE.

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