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Burenkov A.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Matthus C.D.,Friedrich - Alexander - University, Erlangen - Nuremberg | Erlbacher T.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie
IEEE Sensors Journal | Year: 2016

A numerical model for the simulation of ultraviolet sensitive ion-implanted 4H-SiC photodiodes is established. To explain the measured wavelength dependence of the photoresponsivity of such photodiodes, conventional simulation model was modified twofold. First, new experimental data on the optical properties of 4H-SiC were included into the model. Second, the doping dependence of recombination lifetimes was recalibrated, resulting in a stronger recombination of charge carriers in the ion-implanted region near the SiC surface. After the calibration of the model using experimental data, the model was applied for the optimization of the photodiode performance. An improvement of photoresponsivity by about 30% can be achieved by optimizing the thickness of antireflective layer. An improvement by more than 70% can be achieved by lowering doping level to 1 · 1014 cm-3 in the epitaxial layer of 4H-SiC diodes. © 2001-2012 IEEE. Source


Wang L.,University of Glasgow | Brown A.R.,Gold Standard Simulations Ltd | Millar C.,Gold Standard Simulations Ltd | Burenkov A.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | And 4 more authors.
ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon | Year: 2014

In order to enable the simulation of statistical variability simulation in non-ideal device structures which arise from complex patterning steps, the GSS atomistic simulator, GARAND, has been enhanced for handling arbitrary 3D device geometries, and a structure translation tool MONOLITH has been developed to transfer the information about the device geometry, material composition and doping distribution into an intermediate structure and file format which can then be imported by GARAND. Statistical simulations on an example of a 20nm bulk Silicon MOSFET with STI are demonstrated. © 2014 IEEE. Source


Fet A.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Haublein V.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Bauer A.J.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Ryssel H.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | And 3 more authors.
AIP Conference Proceedings | Year: 2010

Effective work function instability of high-κ/metal gate MOS stacks after high temperature treatment results in device threshold voltage shifts and is one of the problems associated with the gate-first integration of high-κ dielectrics in the CMOS process flow. The exact reason for this instability is subject of intense debate. In this paper it is shown that a positive threshold voltage shift due to thermal treatment can be compensated by implanting the lanthanoids lanthanum or dysprosium into the high-κ stack. © 2010 American Institute of Physics. Source


Haublein V.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Ryssel H.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Ryssel H.,Friedrich - Alexander - University, Erlangen - Nuremberg | Frey L.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Frey L.,Friedrich - Alexander - University, Erlangen - Nuremberg
Advances in Materials Science and Engineering | Year: 2012

This paper shows that charge exchange events and dissociation reactions of ions may impact the purity of the ion beam in ion implantation, leading to contamination of the implanted target. Physical relations are derived that explain why unwanted ions are transported in the ion beam despite of a magnetic mass separation. Based on those relations, the simulation tool ENCOTION (ENergetic COntamination simulaTION) has been developed. ENCOTION is a very powerful tool for the simulation of transport mechanisms of ions through a magnet analyzer and for the simulation of mass spectra, as will be demonstrated in this paper. Copyright © 2012 Volker Hublein et al. Source


Fet A.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Haublein V.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Bauer A.J.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Ryssel H.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie | Frey L.,Fraunhofer Institute For Integrierte Systeme Und Bauelementetechnologie
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2011

The instability of the p -type metal effective work function of high- k /metal gate metal-oxide-semiconductor stacks after high temperature treatment results in device threshold voltage shifts and is one of the big challenges for the gate-first integration of high- k dielectrics in the future complementary metal-oxide semiconductor process flow. The exact cause of this instability is a subject of intense debate. In this article, it is shown that by implanting the gate stack with a fluorine dose of 1015 cm-2, it is possible to achieve an appropriate silicon valence band-edge effective work function of 5.1 eV for p -type metal-oxide-semiconductor devices. It is also shown that the fluorine doping can be accomplished not only with F+, but also with BF 2 + ions. The influence of the implantation energy on the obtained effective work function is demonstrated and discussed. The origin of the induced shift is also discussed. Leakage current measurements show that the leakage properties of high- k stacks are not worsened by F implantation, while the implantation of BF2 slightly affects the leakage currents. © 2011 American Vacuum Society. Source

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