Fraunhofer Institute for Integrated Systems and Device Technology

Nuremberg, Germany

Fraunhofer Institute for Integrated Systems and Device Technology

Nuremberg, Germany
Time filter
Source Type

Baer E.,Fraunhofer Institute for Integrated Systems and Device Technology | Burenkov A.,Fraunhofer Institute for Integrated Systems and Device Technology | Evanschitzky P.,Fraunhofer Institute for Integrated Systems and Device Technology | Lorenz J.,Fraunhofer Institute for Integrated Systems and Device Technology
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | Year: 2016

The impact of systematic process variations on the pattering for manufacturing of fin field effect transistors (FinFET) has been studied by means of physical-based lithography and topography simulation. To this end, a typical manufacturing sequence for a static random-access memory (SRAM) cell consisting of six transistors has been simulated. Within this sequence, self-aligned double pattering (SADP) is used to create the fin pattern and litho-etch-litho-etch (LELE) double pattering is applied to structure the gate electrodes. Based on the variations resulting from the manufacturing process, the frequency distributions for the fin width and for the gate length have been extracted. These distributions can be complemented by variations imposed by statistical effects to allow determination of the overall effect of systematic and statistical variations on the circuit behavior of the SRAM cell. © 2016 IEEE.

« EVgo breaks ground on first public 350 kW charger in US | Main | Total joins SEA\LNG coalition to support ambitious growth plans for LNG as marine fuel » Continental’s new 48V hybrid drives are making their first appearance in series production vehicles. (Earlier post.) Manufactured at Continental’s Nuremberg plant, these first series-production 48V hybrid drives will be applied in “Hybrid Assist” diesel variants of both the new Renault Scénic and Grand Scénic models from the end of this year. Just three years after the start of the project, the Nuremberg location developed a modular manufacturing concept that it uses to manufacture efficiently and in line with the cost structures of the volume market. To do so, the supplier invested around €15 million (US$15.7 million) in new production equipment. Using the currently installed equipment, up to 200,000 vehicles can be furnished with 48-volt drives. The modular concept means that products for various automotive manufacturers—differing in terms of size, output or connections such as for cooling, for example—can be produced with this equipment. Hybridization with a 48-volt drive results in an especially favorable cost-benefit ratio. Although the continuous electrical output of 6kW is relatively low, it allows the system to recover the majority of the kinetic energy that would otherwise be converted into heat during braking. This reduces fuel consumption in the new European driving cycle by up to 13%. In real-world use—especially in cities—the savings are even higher thanks to the greater share of driving spent in energy recuperation phases, and can reach up to 21%. One example of a process innovation is the stator. Continental does not wind copper wires, as would be typical in traditional electric motor production. Instead, it uses more than 100 copper pins that a robot inserts into the substrate in a fully automatic process. Afterward, the individual pins are precisely joined together via laser beam welding. Continental found a laser beam welding process for copper components that achieves the desired precision through a research partnership with the Bavarian Laser Center in Nuremberg. Continental also developed a new process for joining the two parts of the housing. The 48-volt drive is installed near the underbody instead of a conventional starter and must fulfill especially high requirements for mechanical strength. Therefore, the housing is not only screwed in place; it is firstly joined with an innovative process called “shrinking.” By heating and then cooling or “shrinking” housing components, it creates a very solid joint that guarantees the protection of the electric components inside. In order to achieve a perfect fit, Continental developed a suitable simulation process in collaboration with the Fraunhofer Institute for Integrated Systems and Device Technology (IISB). Bayern innovativ, the Bavarian center for technology transfer, supported Continental in searching for suitable research partners. The manufacturing segment for the 48-volt drives is divided into a total of three lines. The design of the lines was simulated at an early stage of development in order to guarantee the most economical workflows possible. This allowed Continental to reduce employee walking distances by more than 40% through multiple optimization steps. The Continental Nuremberg site is a center of excellence of international significance for electromobility, primarily due to the site in the northeast, where the Hybrid Electric Vehicle Business Unit—which is responsible for all key components of the electric drive—both develops and manufactures. Continental’s Transmission Business Unit is also headquartered there.

Erdmann A.,Fraunhofer Institute for Integrated Systems and Device Technology
Optics InfoBase Conference Papers | Year: 2016

The presentation reviews optics- and material-driven resolution enhancements in DUV and EUV projection lithography for semiconductor fabrication with special emphasis on the application of computational methods for the exploration and optimization of various technology options. © OSA 2016.

Home > Press > EuroCPS, a Horizon 2020 Project, Announces Next Round Of Support for Innovative Companies and their CPS projects Abstract: The Innovative-company-support Project Started in February 2015. 15 EuroCPS Members from Nine Countries Are Now Supporting Nine Projects out of the First Call. The Second Call for Industrial Projects Is Now open. CEA-Leti, coordinator of the pan-European consortium EuroCPS, today announced that the 15 partners are continuing their support for SMEs, midcaps and large companies with the second open call for industrial projects, which is open from Oct. 28 to Dec. 2. Innovative cyber-physical system (CPS) projects can be submitted. Innovative companies will have multiple support sources: - Technical support from platform partner (indirect funding) - Technical support from design center (indirect funding) - Cascade funding support (direct funding) EuroCPS project: Funded by the European Commission, the three-year, €9.2 million project is designed to help innovators (SMEs, midcaps and large companies) overcome barriers they face when entering new markets by providing technical expertise, coaching and access to advanced industrial CPS platforms. It gets innovators up to speed on the innovation ecosystem of “smart” products by facilitating access to the latest technologies and their implementation. It also taps existing regional ecosystems in several countries to bring the full value chain – from hardware/software platforms to cyber-physical systems – to high value-added products and services. Way of working and achievements: EuroCPS partners were made aware of the innovative companies-support project via local network organizations, brokerage events, technical forums, exhibitions and the EuroCPS homepage ( More than 1,000 companies received notice of EuroCPS. Out of a high number of interested parties, 29 companies submitted industrial experiments during the first call. The proposals came out of seven countries, addressing hardware, software and Integration projects and utilized all platforms that are provided within EuroCPS: · Avionics platform provided by Thales TRT · iNEMO® platform provided by STMicroelectronics · Integrated and open platform provided by AVL · Power management and XMC platform provided by Infineon · Quark platform provided by Intel · Silicon processes and package technology platform provided by STMicroelectronics · STM32F platform provided by STMicroelectronics Two external and independent experts assessed the proposals, and based on their ranking, nine industrial experiments were selected for funding and have started projects. The selected proposals show a huge variety of application areas, such as: low-power wireless connectivity, connected lighting, universal graphical data display, monitoring and optimization of different tasks in agri‐food production, remote data tracking for vehicles by use of hardware in the loop systems, tracking of clinical test tubes, multi-core platform for avionic domain; human system interfaces and security control of cloud data. In addition to the direct funding from the European Commission, the selected companies will get technical support from the platform partners and the following competence centers: · CEA-Leti (France) · Thales TRT (France) · AVL LIST GmbH (Austria) · Fraunhofer Institute for Integrated Systems and Device Technology (IISB) (Germany) · The Digital Catapult (UK) · Alma Mater Studiorum – University of Bologna (Italy) · Lulea Tekniska Universitet (Sweden) · Budapest University of Technology and Economics (Hungary) · Finepower GmbH (Germany) Second open call for industrial experiments: After selection and start of the first CPS projects, EuroCPS will support a new set of innovative companies. Based on the feedback of several companies, Infineon and STMicroelectronics enlarged their platform to provide a broader portfolio for the second round. Proposals can be submitted from Oct. 28 to Dec. 2. The networking partners in EuroCPS are pleased to help the new entrant companies with registration, submitting proposals and finding the right platform and competence center. Selected projects will be notified the beginning of February 2016. EuroCPS is part of the Smart Anything Everywhere Initiative under Horizon 2020 Leadership in Enabling Industrial Technologies, which aims to generating new and breakthrough technologies, boost competitiveness, create jobs and support growth by offering a Europe-wide network of design centers. A first group of four innovation actions included efforts under the combined 25M€ funding budget to support approximately 100 industrial experiments with the aim of involving more than 200 SMEs and midcaps in the field of cyber-physical systems (CPS), the Internet of Things (IoT) and smart systems integration (SSI). More details on available competences, platforms and design centers are available at About CEA Leti As one of three advanced-research institutes within the CEA Technological Research Division, CEA Tech-Leti serves as a bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. It is committed to creating innovation and transferring it to industry. Backed by its portfolio of 2,800 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched 54 startups. Its 8,500m² of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. With a staff of more than 1,800, Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo. Follow us at and @CEA_Leti. For more information, please click If you have a comment, please us. Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Dadzis K.,Solar World Innovations GmbH | Vizman D.,West University of Timișoara | Friedrich J.,Fraunhofer Institute for Integrated Systems and Device Technology
Journal of Crystal Growth | Year: 2013

Directional solidification of large multi-crystalline silicon ingots is a distinctly unsteady process with a complex interaction between melt flow, crystallization interface, and species transport. Both the different time-scales and the three-dimensional character make numerical simulations of this process a challenging task. The complexity of such simulations increases further if external magnetic fields are used to enhance the melt flow. In this contribution, several three-dimensional coupled unsteady calculations are carried out for a 22 × 22 × 11 cm3 silicon melt directionally solidified in a traveling magnetic field. The justification of various approximations in the numerical models is discussed with an emphasis on the frequently used quasi steady-state models for the calculation of the interface shape. It is shown that an upward traveling magnetic field leads to a symmetric concave interface shape while a downward field results in a convex interface with a distinct asymmetry at the current supplies. These results agree in both unsteady and quasi steady-state calculations, but only unsteady calculations reveal the flow-induced local oscillations of the interface. The unsteady segregation process of carbon and oxygen impurities exhibits a non-uniform concentration along the crystallization interface although the bulk concentration is near to the complete mixing limit in the cases with a traveling magnetic field. © 2013 Elsevier B.V. All rights reserved.

Tanasie C.,West University of Timișoara | Vizman D.,West University of Timișoara | Friedrich J.,Fraunhofer Institute for Integrated Systems and Device Technology
Journal of Crystal Growth | Year: 2011

Numerical simulations were carried out in order to study the effect of various types of magnetic fields (steady vertical and horizontal magnetic fields and a combination of a steady field and DC electric current) on melt convection and interface shape during directional solidification of multi-crystalline silicon ingots. It is shown that steady magnetic fields can decrease the interface deflection. The electromagnetic field produced by the combination of DC current through the melt and a steady magnetic field can produce a stirring effect in the melt for a relatively small value of magnetic field and electrical current. Consequently, a more uniform distribution of dopants and impurities can be obtained in the silicon crystals. The melt rotation rate can be easily controlled by the intensity of the electrical current. © 2010 Elsevier B.V. All rights reserved.

Kozawa T.,Osaka University | Erdmann A.,Fraunhofer Institute for Integrated Systems and Device Technology
Applied Physics Express | Year: 2011

With the realization of 13.5 nm extreme ultraviolet (EUV) lithography, further reduction in wavelength has attracted much attention. In this study, the optical images, sensitization processes, and chemical reactions in a chemically amplified resist were calculated to estimate the performance of the resist upon exposure to 6.67 nm EUV radiation. It was found that the reduction in wavelength improves the lithographic image quality even if the secondary electrons generated by high-energy photons are taken into account. One of the keys to the realization of 6.67nm lithography is the development of high-absorption resists. © 2011 The Japan Society of Applied Physics.

Roskopf A.,Fraunhofer Institute for Integrated Systems and Device Technology | Bar E.,Fraunhofer Institute for Integrated Systems and Device Technology | Joffe C.,Fraunhofer Institute for Integrated Systems and Device Technology
IEEE Transactions on Power Electronics | Year: 2014

For inductive components such as coils, inductors or transformers, litz wires with isolated strands are used to decrease conduction losses in applications with higher operating frequencies. Depending on the inner structure of these wires, the frequency dependent losses differ extremely. Until now simulations have not sufficiently matched experimental measurements. The usual simulation approach has been to assume the initial current values in all strands in the litz wire to be the same. In this paper, a 3-D simulation of the connector allows the determination of the current values depending on the position of the strands in the wire. This current distribution is transferred to a 2-D rotationally symmetric simulation of the system (windings, coils, etc.). The current values are permuted between different strands to simulate the twisting of strands inside the litz wire. With this new method a very good agreement with measured losses was achieved and demonstrates how simulation allows one to improve the performance of litz wires. © 1986-2012 IEEE.

Knoerr M.,Fraunhofer Institute for Integrated Systems and Device Technology | Kraft S.,Fraunhofer Institute for Integrated Systems and Device Technology | Schletz A.,Fraunhofer Institute for Integrated Systems and Device Technology
2010 12th Electronics Packaging Technology Conference, EPTC 2010 | Year: 2010

For decades soldering has been the technology of choice in die bonding. However, due to worldwide health protection regulations, the most common solder alloys, which contain lead, have been banned. Furthermore, standard solders cannot fulfil the reliability requirements of future power electronic devices. New interconnection technologies have to be developed. One of them is pressure sintering (p=30..50 MPa) of silver flakes below 300 °C. It forms a strong, highly electrically and thermally conductive bond. In order to lower the level of pressure, silver nanoparticles can be used. Shear tests have shown that even 5 s of sintering, a temperature of 225 °C, or a pressure as low as 2 MPa is sufficient to generate bonds comparable to solder and high pressure sinter joints if the remaining parameters (p, t and T, respectively) are set correctly. However, strength is only a necessary criterion as aging comes into play. Therefore, reliability tests using thermal cycling and power cycling were run. These returned superior reliability of the sintered samples. 160 million of the power cycles between +45 and +175 °C run in this work can be extrapolated using a Coffin-Manson model. Solder joints failed at about 40,000 cycles. ©2010 IEEE.

Erlbacher T.,Fraunhofer Institute for Integrated Systems and Device Technology | Bauer A.J.,Fraunhofer Institute for Integrated Systems and Device Technology | Frey L.,Fraunhofer Institute for Integrated Systems and Device Technology
IEEE Electron Device Letters | Year: 2010

In this letter, we report on the reduction of device resistance by up to 36% in lateral double-diffused metaloxidesemiconductor (LDMOS) field-effect transistors by incorporating trench gates into conventional planar technology. The process and device simulations of this novel device topology are based on a state-of-the-art LDMOS field-effect transistor with a reduced-surface-field extension (buried p-well) for high-voltage applications used for standard IC and ASIC manufacturing processes. Because the well implants can remain unchanged, only a few additional process steps are required for manufacturing such a device. By a straightforward combination of trench-with planar-gate topology, the device resistance can be reduced from 145 to 94 mΩmm2 for the underlying 50-V LDMOS device while fully maintaining its specified blocking properties. The depth of the trench gates just slightly influences the electrical device properties, demonstrating the robustness of trench-gate integration into an existing planar-gate technology. © 2010 IEEE.

Loading Fraunhofer Institute for Integrated Systems and Device Technology collaborators
Loading Fraunhofer Institute for Integrated Systems and Device Technology collaborators