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Shkumbatyuk P.S.,Franko State Pedagogical University
Semiconductors | Year: 2010

Needlelike ZnO single crystals (whiskers) 0.3-0.8 mm long and 1-10 μm in diameter with a resistivity from 3 × 102 to 1 Ω cm have been grown under cw CO2-laser irradiation. The whiskers exhibit weak electroluminescence caused by injection from contacts with participation of intrinsic defects, which affect the electric field distribution. © 2010 Pleiades Publishing, Ltd. Source


Kurilo I.V.,Lviv Polytechnic | Guba S.K.,Lviv Polytechnic | Rudyi I.O.,Lviv Polytechnic | Virt I.S.,Franko State Pedagogical University
Inorganic Materials | Year: 2012

The initial stages of HgCdTe growth on Al 2O 3, GaAs, CdTe, and KCl substrates have been studied by electron diffraction. HgCdTe films were produced by pulsed laser deposition and isothermal vapor phase epitaxy. InGaAs films were grown by isothermal chloride epitaxy on GaAs substrates. In the initial stages of the growth process, we observed a transition from an amorphous to a textured polycrystalline phase and then to a mosaic single-crystal structure. We have calculated the critical size of crystalline grains below which amorphization occurs in II-VI and III-V compounds. The critical grain size agrees with the grain size of the disordered (amorphous) phase that forms in the initial stage of epitaxy. We have determined some characteristics of the heterostructures: critical film thickness below which pseudomorphic growth is possible without misfit dislocation generation, elastic stress in the epitaxial system, surface density of dangling bonds at dislocations, and the critical island radius above which no interfacial misfit dislocations are generated. © 2012 Pleiades Publishing, Ltd. Source


Peleshchak R.M.,Franko State Pedagogical University | Guba S.K.,Lviv Polytechnic | Kuzyk O.V.,Franko State Pedagogical University | Kurilo I.V.,Lviv Polytechnic | Dankiv O.O.,Franko State Pedagogical University
Semiconductors | Year: 2013

The distribution of hydrostatic strains in Bi3+-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi → As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained. © 2013 Pleiades Publishing, Ltd. Source

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