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Persano A.,CNR Institute for Microelectronics and Microsystems | Quaranta F.,CNR Institute for Microelectronics and Microsystems | Capoccia G.,CNR Institute for Microelectronics and Microsystems | Proietti E.,CNR Institute for Microelectronics and Microsystems | And 6 more authors.
Microsystem Technologies | Year: 2016

Shunt capacitive radio-frequency microelectromechanical system (RF MEMS) switches were fabricated on silicon substrate and characterized in the RF domain. Various switch typologies were obtained by three different approaches, which are: (1) the change of the bridge geometric parameters, (2) the covering of the actuator with a floating metal, and (3) the deposition of the bridge directly on the actuator. The S parameters of the fabricated switches were measured in the up and down states, observing the impact on the RF performance of the variation of the geometric parameters and the fabrication process. The electromagnetic modelling of the fabricated switches was used to interpret the measured RF behaviour, allowing to elucidate the drawbacks of the non-perfect conforming of the bridge on the actuator. Finally, the reliability of the fabricated RF MEMS switches under a bipolar voltage excitation was evaluated by cycling tests. Hence, the study presented here provides guidelines to solve some issues of the tight correlation between design, fabrication, performance, and reliability of RF MEMS switches, in view of a large-scale development of these devices. © 2016 Springer-Verlag Berlin Heidelberg Source


Mulloni V.,Fondazione ssler Center for Materials and Microsystems | Resta G.,Fondazione ssler Center for Materials and Microsystems | Margesin B.,Fondazione ssler Center for Materials and Microsystems
Journal of Micromechanics and Microengineering | Year: 2014

Dielectric charging is normally considered one of the most important problems when dealing with RF-MEMS switch reliability, especially for applications which require long-term operation. Other important effects are therefore often neglected. In this paper we demonstrate that, for the case of long-term actuation in dielectric-less switches, the most important issue for switch reliability is not dielectric charging but viscoelastic deformation and creep of the mobile membrane. The measurements and the analysis are performed both for a cantilever and for a clamped-clamped switch configuration, evidencing that in the first case the mechanical deformations are more pronounced, and that they can justify almost completely the variation of actuation and release voltage experimentally measured. Mechanical deformation is also detected in a clamped-clamped switch, but it is less evident than that in the previous case. Nonetheless, even in this case they are responsible for most of the actuation and de-actuation voltage change experimentally detected. © 2014 IOP Publishing Ltd. Source


Mulloni V.,Fondazione ssler Center for Materials and Microsystems | Colpo S.,Fondazione ssler Center for Materials and Microsystems | Faes A.,Fondazione ssler Center for Materials and Microsystems | Margesin B.,Fondazione ssler Center for Materials and Microsystems
Journal of Micromechanics and Microengineering | Year: 2013

This paper presents an analytical method to calculate residual stress and Young's modulus in clamped-clamped beams. These types of structures are a typical building block of many MEMS devices, and this guarantees accurate transferability of the measured parameters. The method is based on the determination of beam bending as a function of applied load by means of a surface profiler, and as a function of beam length. By modeling analytically both the elastic and the stress contribution to beam bending, it is possible to obtain both the stress value and Young's modulus by a simple fitting of the experimental data. Results are presented for electrodeposited gold beam arrays of different widths, but the method is in principle exploitable for every type of suspended film where the residual stress strongly influences the material properties. Accuracy and limitations of the method are also discussed. © 2013 IOP Publishing Ltd. Source


Quaranta F.,CNR Institute for Microelectronics and Microsystems | Persano A.,CNR Institute for Microelectronics and Microsystems | Capoccia G.,CNR Institute for Microelectronics and Microsystems | Taurino A.,CNR Institute for Microelectronics and Microsystems | And 9 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2015

Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process. © 2015 SPIE. Source

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