Kyoto, Japan
Kyoto, Japan

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Provided is a method and an apparatus for producing a novel polymer that is easy and convenient to control the reactivity and excellent in film thickness control and a method and an apparatus for producing an organic film. A production apparatus includes: a first means for turning a raw-material solution containing an organic compound into a mist or droplets by an atomization or a droplet-formation; a second means for carrying the mist or droplets onto a substrate using a carrier gas; and a third means for subjecting the mist or droplets to a thermal reaction by heating on the substrate. Using the production apparatus, an organic film, such as a polymer film, is formed by atomizing or forming droplets from, for example, a raw-material solution containing the organic compound, such as a monomer, delivering a mist or droplets generated by the atomization or the droplet-formation to a substrate with a carrier gas, and, after the delivery, subjecting the mist or the droplets to a thermal reaction by heating on the substrate.


Patent
Flosfia Inc. | Date: 2015-10-21

Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 m or less in a surface roughness (Ra).


Patent
Flosfia Inc. | Date: 2015-08-27

Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.


Patent
Flosfia Inc. | Date: 2016-08-03

Provided is a film forming apparatus which is excellent in the film formation rate and is useful for performing mist CVD. A film forming apparatus includes an atomization/droplet-formation unit for turning a raw-material solution into a mist or droplets a raw-material solution, a carrying unit for carrying the mist or droplets generated in the atomization/droplet-formation unit onto a base using a carrier gas, and a film forming unit for treating the mist or droplets with heat to form a film on the base. The film forming unit is cylindrical or almost cylindrical and has an inlet for introducing the mist or droplets in a side surface thereof so that the mist or droplets is swirled to generate a swirling flow. And the film forming unit has an exhaust outlet in a top surface thereof.


Patent
Flosfia Inc. | Date: 2015-10-07

Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 m or more in a thickness and 80 mcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.


Patent
Flosfia Inc. | Date: 2016-03-02

Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.


Provided is a method and an apparatus for producing a novel polymer that is easy and convenient to control the reactivity and excellent in film thickness control and a method and an apparatus for producing an organic film. A production apparatus includes: a first means for turning a raw-material solution containing an organic compound into a mist or droplets by an atomization or a droplet-formation; a second means for carrying the mist or droplets onto a substrate using a carrier gas; and a third means for subjecting the mist or droplets to a thermal reaction by heating on the substrate. Using the production apparatus, an organic film, such as a polymer film, is formed by atomizing or forming droplets from, for example, a raw-material solution containing the organic compound, such as a monomer, delivering a mist or droplets generated by the atomization or the droplet-formation to a substrate with a carrier gas, and, after the delivery, subjecting the mist or the droplets to a thermal reaction by heating on the substrate.


Patent
Flosfia Inc. | Date: 2015-11-11

Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.


Patent
Flosfia Inc. | Date: 2015-11-11

Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.


Patent
Flosfia Inc. | Date: 2015-02-26

Provided is a film forming apparatus which is excellent in the film formation rate and is useful for performing mist CVD. A film forming apparatus includes an atomization/droplet-formation unit for turning a raw-material solution into a mist or droplets a raw-material solution, a carrying unit for carrying the mist or droplets generated in the atomization/droplet-formation unit onto a base using a carrier gas, and a film forming unit for treating the mist or droplets with heat to form a film on the base. The film forming unit is cylindrical or almost cylindrical and has an inlet for introducing the mist or droplets in a side surface thereof so that the mist or droplets is swirled to generate a swirling flow. And the film forming unit has an exhaust outlet in a top surface thereof.

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