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Kyoto, Japan

Tamba D.,Osaka University | Kubo O.,Osaka University | Oda M.,Kyoto University | Oda M.,FLOSFIA Inc. | And 6 more authors.
Applied Physics Letters | Year: 2016

The surface structure of α-Ga2O3(0001) grown on an α-Al2O3(0001) substrate by mist chemical vapor deposition was studied by coaxial impact-collision ion scattering spectroscopy (CAICISS) and atomic force microscopy (AFM). The minimum step height observed in the AFM image was 0.21 ± 0.01 nm, coinciding with the height of three atomic layers of α-Ga2O3(0001). It was revealed by CAICISS analysis that the surface of α-Ga2O3(0001) is terminated by a Ga layer followed by an O layer, which is consistent with the surface termination of α-Al2O3(0001). A structural model taking surface relaxation into account was also constructed by fitting the simulated curve for the azimuth angle dependence of the Ga intensity to the experimental dependence. The resultant structural model is similar to the model of an α-Al2O3(0001) surface, which indicates analogous behavior in corundum crystals. © 2016 Author(s).

Flosfia Inc. | Date: 2016-03-08

Semiconductor manufacturing machines and structural parts therefor; semiconductor manufacturing parts and accessories, namely, bearings as parts of machines, brushes as parts of machines, chutes as parts of machines; chemical processing machines and apparatus, namely, grinding machines, filtering machines, extracting machines; textile machines and apparatus, namely, textile calendaring machines, textile making-up machines, textile washing machines; glassware manufacturing machines and structural parts therefor; plastic processing machines and structural parts therefor; hydraulic torque converters and pneumatic controls for machines, motors and engines; valves, namely, butterfly valves as parts of machines, ball valves as parts of machines, angle valves as parts of machines. Semi-conductors; semi-conductor devices; telecommunication machines, apparatus and their parts, namely, automatic switching apparatus, computer hardware for telecommunications, electric resistors; electronic machines, apparatus and their parts, namely, electronic circuits, electronic connectors, electronic agendas; measuring or testing machines, instruments and their parts, namely, distance measuring apparatus, gasometers, instruments for measuring length, cement testing machines; laboratory apparatus, instruments and their parts, namely, beakers, drying ovens, centrifuges.

Flosfia Inc. | Date: 2014-12-19

Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Flosfia Inc. | Date: 2015-08-27

Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

Flosfia Inc. | Date: 2014-12-19

Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 m or more in a thickness and 80 mcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

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