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Fergana, Uzbekistan

Atakulov S.B.,Fergana State University | Zainolobidinova S.M.,Fergana State University | Nabiev G.A.,Ferghana Polytechnical Institute | Tukhtamatov O.A.,Fergana State University
Semiconductors | Year: 2012

For three groups of polycrystalline semiconductor films, an experimental investigation of the effect of the light-incidence angle with respect to the substrate plane on the amplitude and sign of the anomalous photovoltage is carried out. According to the previously developed theory, films are investigated in which there is the possibility of providing depleting band bending at the crystallite boundaries, inversion band bending with preservation of the overbarrier current-transport mechanism, and inversion band bending with the current-transport mechanism along the inversion channels. All three types of crystallite boundaries are found in n-PbTe films. It is experimentally established that, for the first and third types of boundaries, a sign inversion of the anomalous photovoltage is observed; for the second type of inversion, it is not observed. The Si films belong to the first type, where only depleting band bending is possible; the sign inversion of the anomalous photovoltage is observed there. The complete agreement between theory and experiment is established. © 2012 Pleiades Publishing, Ltd. Source


Atakulov S.B.,Fergana State University | Zainolobidinova S.M.,Fergana State University | Nabiev G.A.,Ferghana Polytechnical Institute | Tukhtamatov O.A.,Fergana State University
Semiconductors | Year: 2012

A model for a polycrystalline semiconductor corresponding to its real structure is proposed. On the basis of this model, a mechanism for anomalous photovoltaic effects (the initiation of an anomalous photovoltage, its dependence on illumination angle, and anomalous photomagnetic effect) is developed. It is assumed that potential barriers introducing inhomogeneity into the spatial distribution of photocarriers arise due to the capture of majority charge carriers at surface states of the crystallite boundaries. The effect is heavily dependent on the barrier height: if the band bending at the crystallite boundaries is depleting, the effect is determined by the spatial separation of the majority photocarriers by the barrier; otherwise, (the inversion band bending) the effect is formed due to the separation of minority photocarriers. The basis for the mechanism is the anisotropy of light absorption in the polycrystal's bulk (the depleting band bending) or the geometrical inhomogeneity of the films caused by oblique deposition during fabrication (the inversion band bending.) The cause of the anisotropic absorption of light is its reflection by crystallite boundaries. © 2012 Pleiades Publishing, Ltd. Source


Ferghana Polytechnical Institute | Entity website

O'zbekiston kelajagi uchun yetuk, barkamol va raqobatbardosh kadrlarni tayyorlash!


Ferghana Polytechnical Institute | Entity website

Ozbekiston Respublikasi Prezidentining qarori Muborak Ramazon hayitining manaviy hayotimizda ezgulik, shukronalik, mehr-oqibat kabi olijanob qadriyatlarni qaror toptirishdagi orni va ahamiyatini inobatga olib, milliy-diniy ananalarimizni asrab-avaylash va uluglash maqsadida hamda Ozbekiston Respublikasi Prezidentining Roza hayitini dam olish kuni deb elon qilish togrisidagi 1992-yil 27-martdagi PF-368-son Farmoniga muvofiq: 1. Ozbekiston musulmonlari idorasining 2016-yilda Ramazon hayitining birinchi kuni 6-iyul chorshanba kuniga togri kelishi haqida qabul qilgan qarorini etiborga olib, 2016-yil 6-iyul dam olish kuni deb belgilansin va mamlakatimizda bayram sifatida keng nishonlansin ...


Atakulov S.B.,Fergana State University | Zaynolobidinova S.M.,Fergana State University | Nabiev G.A.,Ferghana Polytechnical Institute | Nabiyev M.B.,Fergana State University | Yuldashev A.A.,Ferghana Polytechnical Institute
Semiconductors | Year: 2013

The mobility of nondegenerate electrons in quasi-single-crystal and polycrystalline PbTe films is experimentally investigated. The results obtained are compared with the data for bulk crystals at the same charge-carrier concentration. Under the assumption of limitation of the charge-carrier mobility by intercrystallite potential barriers, electron transport in an electric field is theoretically considered. The theoretical results are in good agreement with the experiment. © 2013 Pleiades Publishing, Ltd. Source

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