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Fergana, Uzbekistan

Atakulov S.B.,Fergana State University | Zainolobidinova S.M.,Fergana State University | Nabiev G.A.,Ferghana Polytechnical Institute | Tukhtamatov O.A.,Fergana State University
Semiconductors | Year: 2012

For three groups of polycrystalline semiconductor films, an experimental investigation of the effect of the light-incidence angle with respect to the substrate plane on the amplitude and sign of the anomalous photovoltage is carried out. According to the previously developed theory, films are investigated in which there is the possibility of providing depleting band bending at the crystallite boundaries, inversion band bending with preservation of the overbarrier current-transport mechanism, and inversion band bending with the current-transport mechanism along the inversion channels. All three types of crystallite boundaries are found in n-PbTe films. It is experimentally established that, for the first and third types of boundaries, a sign inversion of the anomalous photovoltage is observed; for the second type of inversion, it is not observed. The Si films belong to the first type, where only depleting band bending is possible; the sign inversion of the anomalous photovoltage is observed there. The complete agreement between theory and experiment is established. © 2012 Pleiades Publishing, Ltd. Source


Atakulov S.B.,Fergana State University | Zainolobidinova S.M.,Fergana State University | Nabiev G.A.,Ferghana Polytechnical Institute | Tukhtamatov O.A.,Fergana State University
Semiconductors | Year: 2012

A model for a polycrystalline semiconductor corresponding to its real structure is proposed. On the basis of this model, a mechanism for anomalous photovoltaic effects (the initiation of an anomalous photovoltage, its dependence on illumination angle, and anomalous photomagnetic effect) is developed. It is assumed that potential barriers introducing inhomogeneity into the spatial distribution of photocarriers arise due to the capture of majority charge carriers at surface states of the crystallite boundaries. The effect is heavily dependent on the barrier height: if the band bending at the crystallite boundaries is depleting, the effect is determined by the spatial separation of the majority photocarriers by the barrier; otherwise, (the inversion band bending) the effect is formed due to the separation of minority photocarriers. The basis for the mechanism is the anisotropy of light absorption in the polycrystal's bulk (the depleting band bending) or the geometrical inhomogeneity of the films caused by oblique deposition during fabrication (the inversion band bending.) The cause of the anisotropic absorption of light is its reflection by crystallite boundaries. © 2012 Pleiades Publishing, Ltd. Source


Atakulov S.B.,Fergana State University | Zaynolobidinova S.M.,Fergana State University | Nabiev G.A.,Ferghana Polytechnical Institute | Nabiyev M.B.,Fergana State University | Yuldashev A.A.,Ferghana Polytechnical Institute
Semiconductors | Year: 2013

The mobility of nondegenerate electrons in quasi-single-crystal and polycrystalline PbTe films is experimentally investigated. The results obtained are compared with the data for bulk crystals at the same charge-carrier concentration. Under the assumption of limitation of the charge-carrier mobility by intercrystallite potential barriers, electron transport in an electric field is theoretically considered. The theoretical results are in good agreement with the experiment. © 2013 Pleiades Publishing, Ltd. Source


Rasulov R.Y.,Fergana State University | Rasulov V.R.,Fergana State University | Eshboltaev I.,Kokand State Pedagogical Institute
Russian Physics Journal | Year: 2016

The ballistic contribution to the current of linear photovoltaic effect under two-photon absorption of light is calculated and theoretically analyzed for the semiconductors of a tetrahedral symmetry with a complex band structure consisting of two closely spaced subbands. The transitions between the branches of one band in cases of the simultaneous absorption of two photons and successive absorption of two single photons are taken into account. © 2016 Springer Science+Business Media New York Source


Rasulov R.Y.,Fergana State University | Rasulov V.R.,Fergana State University | Eshboltaev I.,Kokand State Pedagogical Institute
Russian Physics Journal | Year: 2016

An occurrence of the current of the shift linear photovoltaic effect under two-photon absorption of light in semiconductors without a center of symmetry with a complex band structure is theoretically analyzed. The contributions both from the simultaneous absorption of two photons and successive absorption of two single photons to the photocurrent are taken into account. © 2016, Springer Science+Business Media New York. Source

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